Manufacture method of AMOLED back plate and structure thereof

Description

CROSS REFERENCE TO RELATED APPLICATIONS

This is a divisional application of co-pending U.S. patent application Ser. No. 14/429,082, filed on Mar. 18, 2015.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a display technology field, and more particularly to a manufacture method of an AMOLED back plate and a structure thereof.

2. The Related Arts

In the display field, liquid crystal display (LCD), organic light emitting diode (OLED) and other panel display techniques have been gradually replaced the conventional cathode ray tube (CRT) displays. The OLED possesses many outstanding properties of self-illumination, low driving voltage, high luminescence efficiency, fast response, high clarity and contrast, near 180° view angle, wide range of working temperature, applicability of flexible display and large scale full color display. The OLED is considered as the most potential flat panel display technology.

The OLED can be categorized as passive matrix OLED (PMOLED) and active matrix OLED (AMOLED) according to the driving types. Generally, the AMOLED comprises a low temperature poly-silicon (LTPS) drive back plate and an electroluminescence layer for being the self-illumination component. The low temperature poly-silicon possesses higher electron mobility. For the AMOLED, the LTPS material possesses advantages of high resolution, fast response, high brightness, high aperture ratio, low power consumption, et cetera.

A structure of an AMOLED back plate according to prior art is shown in FIG. 1. The manufacture process of the AMOLED back plate generally is:

step 1, deposing a buffer layer 200 on a glass substrate 100;

step 2, deposing an amorphous silicon layer (a-Si) on the buffer layer 200, and using the Laser process to make the amorphous silicon layer to be crystallized and converted to be a poly-silicon layer (Poly-Si);

step 3, patterning the poly-silicon layer with photo and etch processes to form a first poly-silicon section 301 and a second poly-silicon section 303;

step 4, deposing an N type heavy doped amorphous silicon layer N+a-Si on the buffer layer 200, the first poly-silicon section 301 and the second poly-silicon section 303, and implementing the photo process to define the position of a channel 400, and etching to pattern the N type heavy doped amorphous silicon layer N+a-Si for forming a source/a drain 401 on the first poly-silicon section 301 and an electrode 403 on the second poly-silicon section 303 except an area corresponding to the channel 400;

step 5, deposing and patterning the gate isolation layer 500 on the buffer layer 200, the source/the drain 401 and the electrode 403;

step 6, deposing and patterning a first metal layer on the gate isolation layer 500 to form a gate 601 and a metal electrode 603, wherein the gate 601 is above the source/the drain 401 and partially overlaps the source/the drain 401 in a horizontal direction;

step 7, sequentially forming an interlayer insulation layer 700, a metal source/a metal drain 801, a flat layer 900, an anode 1000, a pixel definition layer 1100 and a photo spacer 1200 on the gate isolation layer 500, the gate 601 and the metal electrode 603 with deposition, photo and etch processes.

The metal source/the metal drain 801 are electrically connected to the source/the drain 401; and the anode 1000 is electrically connected to the metal source/the metal drain 801.

The first poly-silicon section 301, the source/the drain 401, the gate 601 and the metal source/the metal drain 801 construct a drive TFT, and the second poly-silicon section 303, the electrode 403 and the metal electrode 603 construct a storage capacitor.

The drive TFT of the AMOLED back plate shown in FIG. 1 is an NMOS, and the AMOLED panel may suffer image sticking more easily. Besides, the contact resistance between the source/the drain 401 formed with the N type heavy doped amorphous silicon layer N+a-Si and the first poly-silicon section 301 is higher, and thus, the conductive current of the drive TFT can be lower. In addition, the source/the drain 401 and the gate 601 partially overlap each other in the horizontal direction and this may cause a leakage current of the drive TFT to be excessively high.

SUMMARY OF THE INVENTION

An objective of the present invention is to provide a manufacture method of an AMOLED back plate, which can improve the electrical property of a drive TFT to make a conductive current higher and a leakage current lower, and diminish image sticking for raising the display quality of the AMOLED.

Another objective of the present invention is to provide an AMOLED back plate, which can improve the electrical property of the drive TFT to make a conductive current higher and a leakage current lower, and diminish image sticking for raising the display quality of the AMOLED.

For realizing the aforesaid objectives, the present invention provides a manufacture method of an AMOLED back plate, which comprises sequentially deposing a buffer layer, an amorphous silicon layer on a substrate, and crystallizing and converting the amorphous silicon layer to be a poly-silicon layer, and patterning the poly-silicon layer, and then deposing a P type heavy doped micro silicon layer, and implementing a photo process to define a position of a channel, and etching the P type heavy doped micro silicon layer to form a source/a drain, and thereafter, sequentially forming a gate isolation layer, a gate, an interlayer insulation layer, a metal source/a metal drain, a flat layer, an anode, a pixel definition layer and a photo spacer; the source/the drain and the gate do not overlap in the horizontal direction and are mutually spaced.

The manufacture method of the AMOLED back plate comprises the following steps:

step 1, providing a substrate and deposing a buffer layer on the substrate;

step 2, deposing an amorphous silicon layer on the buffer layer and implementing an excimer laser annealing process to the amorphous silicon layer to make the amorphous silicon layer crystallized and converted into a poly-silicon layer;

step 3, patterning the poly-silicon layer with photo and etch processes to form a first poly-silicon section and a second poly-silicon section;

step 4, deposing a P type heavy doped micro silicon layer on the buffer layer, the first poly-silicon section and the second poly-silicon section; implementing a photo process to define a position of a channel; and etching the P type heavy doped micro silicon layer to pattern the P type heavy doped micro silicon layer for forming a source/a drain on the first poly-silicon section and an electrode on the second poly-silicon section except an area corresponding to the channel;

step 5, deposing and patterning a gate isolation layer on the buffer layer, the source/the drain and the electrode;

step 6, deposing and patterning a first metal layer on the gate isolation layer to form a gate and a metal electrode;

wherein the gate is above the channel and the source/the drain and the gate are mutually spaced with a certain distance in a horizontal direction;

step 7, sequentially forming an interlayer insulation layer, a metal source/a metal drain, a flat layer, an anode, a pixel definition layer, and a photo spacer on the gate isolation layer, the gate and the metal electrode with deposition, photo and etch processes;

wherein the metal source/the metal drain are electrically connected to the source/the drain; and the anode is electrically connected to the metal source/the metal drain; and

wherein the first poly-silicon section, the source/the drain, the gate and the metal source/the metal drain construct a drive TFT, and the second poly-silicon section, the electrode and the metal electrode construct a storage capacitor.

In the step 4, the P type heavy doped micro silicon layer is deposed by chemical vapor deposition (CVD).

The mutually spaced distance of the source/the drain and the gate in the horizontal direction is 0.1-0.5 μm.

A material of the gate is a stacked combination of one or more of molybdenum, titanium, aluminum and copper.

A material of the buffer layer is silicon nitride, silicon oxide, or a combination thereof; and a material of the interlayer insulation layer is silicon oxide, silicon nitride or a combination thereof.

A material of the anode is an indium tin oxide/silver/indium tin oxide compound thin film.

The present invention further provides a structure of an AMOLED back plate, comprising a substrate, a buffer layer located on the substrate, a first poly-silicon section and a second poly-silicon section arranged in space on the buffer layer, a source/a drain and an electrode respectively located on the first poly-silicon section and the second poly-silicon section, a gate isolation layer located on the buffer layer, the source/the drain and the electrode, a gate and a metal electrode located on the gate isolation layer, and an interlayer insulation layer, a metal source/a metal drain, a flat layer, an anode, a pixel definition layer and a photo spacer, sequentially formed on the gate isolation layer, the gate and the metal electrode, wherein the metal source/the metal drain are electrically connected to the source/the drain and the anode is electrically connected to the metal source/the metal drain;

wherein a material of the source/the drain is P type heavy doped micro silicon; a channel is located between the source/the drain; and the gate is above the channel and the source/the drain and the gate are mutually spaced in a horizontal direction;

wherein the first poly-silicon section, the source/the drain, the gate and the metal source/the metal drain construct a drive TFT, and the second poly-silicon section, the electrode and the metal electrode construct a storage capacitor.

The mutually spaced distance of the source/the drain and the gate in the horizontal direction is 0.1-0.5 μm.

A material of the gate is a stacked combination of one or more of molybdenum, titanium, aluminum and copper; a material of the buffer layer is silicon nitride, silicon oxide, or a combination thereof; a material of the interlayer insulation layer is silicon oxide, silicon nitride or a combination thereof; and a material of the anode is an indium tin oxide/silver/indium tin oxide compound thin film.

The present invention further provides a structure of an AMOLED back plate, comprising a substrate, a buffer layer located on the substrate, a first poly-silicon section and a second poly-silicon section arranged in space on the buffer layer, a source/a drain and an electrode respectively located on the first poly-silicon section and the second poly-silicon section, a gate isolation layer located on the buffer layer, the source/the drain and the electrode, a gate and a metal electrode located on the gate isolation layer, and an interlayer insulation layer, a metal source/a metal drain, a flat layer, an anode, a pixel definition layer and a photo spacer, sequentially formed on the gate isolation layer, the gate and the metal electrode, wherein the metal source/the metal drain are electrically connected to the source/the drain and the anode is electrically connected to the metal source/the metal drain;

wherein a material of the source/the drain is P type heavy doped micro silicon; a channel is located between the source/the drain; the gate is above the channel, and the source/the drain and the gate are mutually spaced in a horizontal direction;

wherein the first poly-silicon section, the source/the drain, the gate and the metal source/the metal drain construct a drive TFT, and the second poly-silicon section, the electrode and the metal electrode construct a storage capacitor;

wherein the mutually spaced distance of the source/the drain and the gate in the horizontal direction is 0.1-0.5 μm;

wherein a material of the gate is a stacked combination of one or more of molybdenum, titanium, aluminum and copper; a material of the buffer layer is silicon nitride, silicon oxide, or a combination thereof; a material of the interlayer insulation layer is silicon oxide, silicon nitride or a combination thereof; and a material of the anode is an indium tin oxide/silver/indium tin oxide compound thin film.

The benefits of the present invention are as follows. The present invention provides a manufacture method of an AMOLED back plate, in which by deposing and patterning a P type heavy doped micro silicon layer to form a source/a drain, and making the source/the drain and a gate be mutually spaced in a horizontal direction, the contact resistance between the source/the drain and a first poly-silicon section can be reduced to improve the electrical property of a drive TFT to make a conductive current higher and a leakage current lower, and diminish image sticking for raising the display quality of the AMOLED. The present invention also provides a structure of an AMOLED back plate, in which by locating a source/a drain of which a material is P type heavy doped micro silicon such that the source/the drain and a gate are mutually spaced in a horizontal direction, the contact resistance between the source/the drain and a first poly-silicon section can be reduced to improve the electrical property of a drive TFT to make a conductive current higher and a leakage current lower, and diminish image sticking for raising the display quality of the AMOLED.

BRIEF DESCRIPTION OF THE DRAWINGS

The technical solution and the beneficial effects of the present invention are best understood from the following detailed description with reference to the accompanying figures and embodiments.

In the drawings:

FIG. 1 is a diagram of an AMOLED back plate structure according to prior art;

FIG. 2 is a flowchart of a manufacture method of an AMOLED back plate according to the present invention;

FIG. 3 is a diagram of step 3 in the manufacture method of the AMOLED back plate according to the present invention;

FIG. 4 is a diagram of step 4 in the manufacture method of the AMOLED back plate according to the present invention;

FIG. 5 is a diagram of step 5 in the manufacture method of the AMOLED back plate according to the present invention;

FIG. 6 is a diagram of step 6 in the manufacture method of the AMOLED back plate according to the present invention; and

FIG. 7 is a diagram of step 7 in the manufacture method of the AMOLED back plate and a diagram of a structure of the AMOLED back plate according to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

For better explaining the technical solution and the effect of the present invention, the present invention will be further described in detail with the accompanying drawings and the specific embodiments.

Referring to FIGS. 2-7, the present invention provides a manufacture method of an AMOLED back plate, comprising the following steps:

step 1, providing a substrate 1 and deposing a buffer layer 2 on the substrate 1.

The substrate 1 is a transparent substrate. Preferably, the substrate 1 is a glass substrate or a plastic substrate.

A material of the buffer layer 2 is silicon nitride (SiNx), silicon oxide (SiOx), or a combination thereof.

step 2, deposing an amorphous silicon layer on the buffer layer 2, and implementing an excimer laser annealing process to the amorphous silicon layer to make the amorphous silicon layer crystallized and converted into a poly-silicon layer.

step 3, as shown in FIG. 3, patterning the poly-silicon layer with photo and etch processes to form a first poly-silicon section 31 and a second poly-silicon section 33.

step 4, as shown in FIG. 4, deposing a P type heavy doped micro silicon (P+micro-crystallized Si) layer P+uc-Si on the buffer layer 2, the first poly-silicon section 31 and the second poly-silicon section 33 by chemical vapor deposition (CVD); implementing a photo process to define a position of a channel 40; and etching the P type heavy doped micro silicon layer P+uc-Si to pattern the P type heavy doped micro silicon layer P+uc-Si for forming a source/a drain 41 on the first poly-silicon section 31 and an electrode 43 on the second poly-silicon section 33 except an area corresponding to the channel 40.

step 5, as shown in FIG. 5, deposing and patterning a gate isolation layer 5 on the buffer layer 2, the source/the drain 41 and the electrode 43.

step 6, as shown in FIG. 6, deposing and patterning a first metal layer on the gate isolation layer 5 to form a gate 61 and a metal electrode 63.

The gate 61 is located above the channel 40, and the source/the drain 41 and the gate 61 are mutually spaced with a certain distance in a horizontal direction. Furthermore, the mutually spaced distance of the source/the drain 41 and the gate 61 in the horizontal direction is 0.1-0.5 μm.

A material of the gate 61 and the metal electrode 63 is a stacked combination of one or more of molybdenum (Mo), titanium (Ti), aluminum (Al) and copper (Cu).

step 7, as shown in FIG. 7, sequentially forming an interlayer insulation layer 7, a metal source/a metal drain 81, a flat layer 9, an anode 10, a pixel definition layer 11, and a photo spacer 12 on the gate isolation layer 5, the gate 61 and the metal electrode 63 with deposition, photo and etch processes.

The metal source/the metal drain 81 are electrically connected to the source/the drain 41; and the anode 10 is electrically connected to the metal source/the metal drain 81.

A material of the interlayer insulation layer 7 is silicon oxide, silicon nitride or a combination thereof. A material of the anode 10 is an indium tin oxide/silver/indium tin oxide (ITO/Ag/ITO) compound thin film.

The first poly-silicon section 31, the source/the drain 41, the gate 61 and the metal source/the metal drain 81 construct a drive TFT, and the second poly-silicon section 33, the electrode 43 and the metal electrode 63 construct a storage capacitor.

In the aforesaid manufacture method of the AMOLED back plate, the source/the drain 41 is obtained by deposing and patterning a P type heavy doped micro silicon layer P+uc-Si, and thus, the drive TFT is a P type TFT, and the AMOLED driven by the P type TFT can diminish image sticking to thus improve the display quality of the AMOLED. Further, the material property of the P type heavy doped micro silicon is more similar with that of the poly-silicon, and thus, the contact resistance between the source/the drain 41 and the first poly-silicon section 31 can be reduced to improve the electrical property of the drive TFT to make a conductive current higher. The source/the drain 41 and the gate 61 are mutually spaced in the horizontal direction with no overlapping area therebetween so as to make a leakage current of the drive TFT lower.

Referring to FIG. 7, the present invention also provides a structure of an AMOLED back plate, which comprises a substrate 1, a buffer layer 2 located on the substrate 1, a first poly-silicon section 31 and a second poly-silicon section 33 arranged in space on the buffer layer 2, a source/a drain 41 and an electrode 43 respectively located on the first poly-silicon section 31 and the second poly-silicon section 33, a gate isolation layer 5 located on the buffer layer 2, the source/the drain 41 and the electrode 43, a gate 61 and a metal electrode 63 located on the gate isolation layer 5, and an interlayer insulation layer 7, a metal source/a metal drain 81, a flat layer 9, an anode 10, a pixel definition layer 11 and a photo spacer 12 sequentially formed on the gate isolation layer 5, the gate 61 and the metal electrode 63.

The metal source/the metal drain 81 are electrically connected to the source/the drain 41. The anode 10 is electrically connected to the metal source/the metal drain 81. The first poly-silicon section 31, the source/the drain 41, the gate 61 and the metal source/the metal drain 81 construct a drive TFT, and the second poly-silicon section 33, the electrode 43 and the metal electrode 63 construct a storage capacitor.

A material of the source/the drain 41 is P type heavy doped micro silicon (P+uc-Si). A channel 40 is located between the source/the drain 41. The gate 61 is located above the channel 40. The source/the drain 41 and the gate 61 do not overlap each other and are mutually spaced in a horizontal direction. Furthermore, the mutually spaced distance between the source/the drain 41 and the gate 61 in the horizontal direction is 0.1-0.5 μm.

Specifically, the substrate 1 is a transparent substrate. Preferably, the substrate 1 is a glass substrate or a plastic substrate. A material of the gate 61 is a stacked combination of one or more of molybdenum, titanium, aluminum and copper. A material of the buffer layer 2 is silicon nitride, silicon oxide, or a combination thereof. A material of the interlayer insulation layer 7 is silicon oxide, silicon nitride or a combination thereof. A material of the anode 10 is an indium tin oxide/silver/indium tin oxide compound thin film.

In the aforesaid structure of AMOLED back plate, the material of the source/the drain 41 is P type heavy doped micro silicon P+uc-Si, and thus, the drive TFT is a P type TFT, and the AMOLED driven by the P type TFT can diminish image sticking and thus improving the display quality of the AMOLED. Further, the material property of the P type heavy doped micro silicon is more similar with that of the poly-silicon, and thus, the contact resistance between the source/the drain 41 and the first poly-silicon section 31 can be reduced to improve the electrical property of the drive TFT to make a conductive current higher. The source/the drain 41 and the gate 61 are mutually spaced in the horizontal direction with no overlapping area therebetween so as to make a leakage current of the drive TFT lower.

In conclusion, in the manufacture method of an AMOLED back plate of the present invention, by deposing and patterning a P type heavy doped micro silicon layer to form a source/a drain and making the source/the drain and a gate be mutually spaced in a horizontal direction, the contact resistance between the source/the drain and a first poly-silicon section can be reduced to improve the electrical property of the drive TFT to make a conductive current higher and a leakage current lower, and diminish image sticking for raising the display quality of the AMOLED. In a structure of an AMOLED back plate of the present invention, by locating a source/a drain of which a material is P type heavy doped micro silicon such that the source/the drain and a gate are mutually spaced from each other in a horizontal direction, the contact resistance between the source/the drain and a first poly-silicon section can be reduced to improve the electrical property of the drive TFT to make a conductive current higher and a leakage current lower, and diminish image sticking for raising the display quality of the AMOLED.

The above provides only specific embodiments of the present invention, and the scope of the present invention is not limited to it. To those skilled in the art, modification or substitution that are easily derived should be covered by the protection scope sought for the invention. Thus, the scope of the invention should be defined by the appended claims.