Assignee profile:

CYRIUM TECHNOLOGIES INCORPORATED

City:

Ottawa

Country:

Canada

Published Applications:

11

Last publication date:

2013-03-14

Patent Grants:

7

Last grant date:

2013-01-29

Top Inventors for applications by CYRIUM TECHNOLOGIES INCORPORATED

These are the the leading inventors for applications assigned to CYRIUM TECHNOLOGIES INCORPORATED:

Recent patent applications by CYRIUM TECHNOLOGIES INCORPORATED

CYRIUM TECHNOLOGIES INCORPORATED based in Ottawa, CA has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2013-03-14
US20130061921A1
Electricity

SOLAR CELL AND METHOD OF FABRICATION THEREOF

#2 | 2012-05-24 ✅ Patent 8,362,460 granted on 2013-01-29
US20120125418A1
Electricity

Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails

#3 | 2012-01-05 ✅ Patent 8,190,386 granted on 2012-05-29
US20120004868A1
Electricity

Apparatus and method to characterize multijunction photovoltaic solar cells

#4 | 2011-11-17
US20110277835A1
Electricity

SOLAR CELL WITH SPLIT GRIDLINE PATTERN

#5 | 2011-11-17 ✅ Patent 9,018,515 granted on 2015-04-28
US20110277829A1
Electricity

Solar cell with epitaxially grown quantum dot material

#6 | 2011-10-06 ✅ Patent 8,073,645 granted on 2011-12-06
US20110246109A1
Electricity

Apparatus and method to characterize multijunction photovoltaic solar cells

#7 | 2011-08-04
US20110186105A1
Electricity

SOLAR CELL ASSEMBLY WITH SOLDER LUG

#8 | 2011-03-31 ✅ Patent 8,124,958 granted on 2012-02-28
US20110073913A1
Electricity

Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails

#9 | 2011-03-24
US20110067752A1
Performing operations; transporting

SOLAR CELL WITH EPITAXIALLY GROWN QUANTUM DOT MATERIAL

#10 | 2011-02-03 ✅ Patent 8,378,209 granted on 2013-02-19
US20110023958A1
Electricity

Solar cell and method of fabrication thereof

#11 | 2008-02-14 ✅ Patent 7,872,252 granted on 2011-01-18
US20080035939A1
Electricity

Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails

AssigneeID:

13298 ⎘