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Assignee profile:

IPOWER SEMICONDUCTOR

City:

GILROY, California

Country:

United States

Published Applications:

20

Last publication date:

2024-02-15

Patent Grants:

16

Last grant date:

2025-03-25

Top Inventors for applications by IPOWER SEMICONDUCTOR

These are the the leading inventors for applications assigned to IPOWER SEMICONDUCTOR:

Recent patent applications by IPOWER SEMICONDUCTOR

IPOWER SEMICONDUCTOR based in GILROY, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2024-02-15 ✅ Patent 12,262,553 granted on 2025-03-25
US20240055484A1
Electricity

Field stop IGBT with grown injection region

 #2 | 2023-03-30 ✅ Patent 12,464,747 granted on 2025-11-04
US20230100800A1
Electricity

SHIELDED TRENCH DEVICES

 #3 | 2022-04-28 ✅ Patent 11,640,994 granted on 2023-05-02
US20220131001A1
Electricity

Shielded gate trench MOSFET devices

 #4 | 2022-04-28 ✅ Patent 11,640,993 granted on 2023-05-02
US20220131000A1
Electricity

Shielded gate trench MOSFET devices

 #5 | 2022-04-28 ✅ Patent 11,640,992 granted on 2023-05-02
US20220130999A1
Electricity

Shielded gate trench MOSFET devices

 #6 | 2022-01-13
US20220013627A1
Electricity

CARRIER INJECTION CONTROL FAST RECOVERY DIODE STRUCTURES AND METHODS OF FABRICATION

 #7 | 2021-10-28 ✅ Patent 11,581,432 granted on 2023-02-14
US20210336051A1
Electricity

Small pitch super junction MOSFET structure and method

 #8 | 2021-07-22 ✅ Patent 11,469,313 granted on 2022-10-11
US20210226041A1
Electricity

Self-aligned trench MOSFET and IGBT structures and methods of fabrication

 #9 | 2021-02-25
US20210057557A1
Electricity

IGBT DEVICES WITH 3D BACKSIDE STRUCTURES FOR FIELD STOP AND REVERSE CONDUCTION

 #10 | 2021-02-25
US20210057556A1
Electricity

IGBT DEVICES WITH 3D BACKSIDE STRUCTURES FOR FIELD STOP AND REVERSE CONDUCTION

 #11 | 2020-09-24 ✅ Patent 11,538,911 granted on 2022-12-27
US20200303507A1
Electricity

Shielded trench devices

 #12 | 2020-06-25 ✅ Patent 11,239,352 granted on 2022-02-01
US20200203514A1
Electricity

Self-aligned and robust IGBT devices

 #13 | 2020-04-02 ✅ Patent 11,069,770 granted on 2021-07-20
US20200105866A1
Electricity

Carrier injection control fast recovery diode structures

 #14 | 2020-02-06 ✅ Patent 11,251,297 granted on 2022-02-15
US20200044078A1
Electricity

Shielded gate trench MOSFET devices

 #15 | 2019-11-14 ✅ Patent 10,714,574 granted on 2020-07-14
US20190348510A1
Electricity

Shielded trench devices

 #16 | 2019-10-24 ✅ Patent 11,056,585 granted on 2021-07-06
US20190326431A1
Electricity

Small pitch super junction MOSFET structure and method

 #17 | 2019-09-05 ✅ Patent 10,998,438 granted on 2021-05-04
US20190273157A1
Electricity

Self-aligned trench MOSFET structures and methods

 #18 | 2019-09-05 ✅ Patent 10,777,661 granted on 2020-09-15
US20190273152A1
Electricity

Method of manufacturing shielded gate trench MOSFET devices

 #19 | 2019-08-08
US20190245070A1
Electricity

IGBT DEVICES WITH 3D BACKSIDE STRUCTURES FOR FIELD STOP AND REVERSE CONDUCTION

 #20 | 2019-07-18 ✅ Patent 11,233,141 granted on 2022-01-25
US20190221657A1
Electricity

Self-aligned and robust IGBT devices

Also check out IPOWER SEMICONDUCTOR's (Gilroy, United States) applicant profile with 16 patent applications submitted.

AssigneeID:

151133 ⎘