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Assignee profile:

THIRD DIMENSION (3D) SEMICONDUCTOR, INC.

City:

Tempe, Arizona

Country:

United States

Published Applications:

23

Last publication date:

2012-02-16

Patent Grants:

21

Last grant date:

2011-12-06

Top Inventors for applications by THIRD DIMENSION (3D) SEMICONDUCTOR, INC.

These are the the leading inventors for applications assigned to THIRD DIMENSION (3D) SEMICONDUCTOR, INC.:

Recent patent applications by THIRD DIMENSION (3D) SEMICONDUCTOR, INC.

THIRD DIMENSION (3D) SEMICONDUCTOR, INC. based in Tempe, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2012-02-16
US20120040521A1
Electricity

VOLTAGE SUSTAINING LAYER WIHT OPPOSITE-DOPED ISLAND FOR SEMINCONDUCTOR POWER DEVICES

 #2 | 2009-05-21 ✅ Patent 8,071,450 granted on 2011-12-06
US20090130828A1
Electricity

Method for forming voltage sustaining layer with opposite-doped islands for semiconductor power devices

 #3 | 2008-12-25 ✅ Patent 7,977,745 granted on 2011-07-12
US20080315327A1
Electricity

Tungsten plug drain extension

 #4 | 2008-11-27
US20080290442A1
Electricity

PROCESS FOR HIGH VOLTAGE SUPERJUNCTION TERMINATION

 #5 | 2008-11-20 ✅ Patent 7,622,787 granted on 2009-11-24
US20080283956A1
Electricity

Process for high voltage superjunction termination

 #6 | 2008-10-30 ✅ Patent 8,450,795 granted on 2013-05-28
US20080265317A1
Electricity

Technique for forming the deep doped columns in superjunction

 #7 | 2008-07-10 ✅ Patent 7,759,204 granted on 2010-07-20
US20080166855A1
Electricity

Process for high voltage superjunction termination

 #8 | 2008-07-10 ✅ Patent 7,772,086 granted on 2010-08-10
US20080164521A1
Electricity

Process for high voltage superjunction termination

 #9 | 2007-11-29 ✅ Patent 7,498,614 granted on 2009-03-03
US20070272999A1
Electricity

Voltage sustaining layer with opposite-doped islands for semiconductor power devices

 #10 | 2006-11-09 ✅ Patent 7,410,891 granted on 2008-08-12
US20060252219A1
Electricity

Method of manufacturing a superjunction device

 #11 | 2006-10-19 ✅ Patent 7,354,818 granted on 2008-04-08
US20060231915A1
Electricity

Process for high voltage superjunction termination

 #12 | 2006-10-12 ✅ Patent 7,439,583 granted on 2008-10-21
US20060226494A1
Electricity

Tungsten plug drain extension

 #13 | 2006-09-14 ✅ Patent 7,364,994 granted on 2008-04-29
US20060205174A1
Electricity

Method for manufacturing a superjunction device with wide mesas

 #14 | 2006-08-10 ✅ Patent 7,271,067 granted on 2007-09-18
US20060177995A1
Electricity

Voltage sustaining layer with opposite-doped islands for semiconductor power devices

 #15 | 2006-07-27 ✅ Patent 7,339,252 granted on 2008-03-04
US20060163690A1
Electricity

Semiconductor having thick dielectric regions

 #16 | 2006-07-20 ✅ Patent 7,704,864 granted on 2010-04-27
US20060160309A1
Electricity

Method of manufacturing a superjunction device with conventional terminations

 #17 | 2006-06-22 ✅ Patent 7,504,305 granted on 2009-03-17
US20060134867A1
Electricity

Technique for forming the deep doped regions in superjunction devices

 #18 | 2005-08-18 ✅ Patent 7,109,110 granted on 2006-09-19
US20050181577A1
Electricity

Method of manufacturing a superjunction device

 #19 | 2005-08-18 ✅ Patent 7,052,982 granted on 2006-05-30
US20050181564A1
Electricity

Method for manufacturing a superjunction device with wide mesas

 #20 | 2005-08-18 ✅ Patent 7,041,560 granted on 2006-05-09
US20050181558A1
Electricity

Method of manufacturing a superjunction device with conventional terminations

 #21 | 2005-08-11 ✅ Patent 7,199,006 granted on 2007-04-03
US20050176192A1
Electricity

Planarization method of manufacturing a superjunction device

 #22 | 2005-06-30 ✅ Patent 7,023,069 granted on 2006-04-04
US20050139914A1
Electricity

Method for forming thick dielectric regions using etched trenches

 #23 | 2005-02-17 ✅ Patent 7,227,197 granted on 2007-06-05
US20050035406A1
Electricity

Semiconductor high-voltage devices
AssigneeID:

176597 ⎘