High Current Electronics Instutute

City:

Tomsk

Country:

Russian Federation

Published Applications:

Last publication date:

2007-09-13

Patent Grants:

Last grant date:

Top Inventors for applications by High Current Electronics Instutute

These are the the leading inventors for applications assigned to High Current Electronics Instutute:

Dmitrili V. Shitz 1 Tomsk, Russian Federation
Victor F. TARASENKO 1 Tomsk, Russian Federation
Mikhail I LOMAEV 1 Tomsk, Russian Federation
Victor S. SKAKUN 1 Tomsk, Russian Federation

Yoshiie Matsumoto 1 Tokyo, Japan
Andrey A. Lisenko 1 Toms, Russian Federation

Recent patent applications by High Current Electronics Instutute

High Current Electronics Instutute based in Tomsk, RU has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2007-09-13

US20070210713A1

Electricity

Dielectric Barrier Discharge Excimer Light Source

AssigneeID:

284408 ⎘