Yangtze Memory Technologies Co., Ltd.

City:

Country:

Published Applications:

Last publication date:

2026-03-05

Patent Grants:

Last grant date:

2026-02-17

Top Inventors for applications by Yangtze Memory Technologies Co., Ltd.

These are the the leading inventors for applications assigned to Yangtze Memory Technologies Co., Ltd.:

Liang CHEN 1 Wuhan, China
Di WANG 1 Wuhan, China
Yafei FU 1 Wuhan, China
Wei XIE 1 Wuhan, China

Shaokai Rao 1 Wuhan, China
Sangoh LIM 1 Wuhan, China
Ying Cui 1 Wuhan, China
Qi XU 1 Wuhan, China

Dejia Huang 1 Wuhan, China
An Zhang 1 Wuhan, China
Song Min Jiang 1 Wuhan, China
Tingting Zhao 1 Wuhan, China

Shan Li 1 Wuhan, China
Wen Qiang Chen 1 Wuhan, China
Chao Wang 1 Wuhan, China
Zichen LIU 1 Wuhan, China

Ying Huang 1 Wuhan, China
Jianquan Jia 1 Wuhan, China
Hongtao Liu 1 Wuhan, China
Wei LIU 1 Wuhan, China

Kaiwei Li 1 Wuhan, China
Wenxi Zhou 1 Wuhan, China
Kaikai You 1 Wuhan, China
Yanhong Wang 1 Wuhan, China

Wenzhe Wei 1 Wuhan, China
Yaqin LIU 1 Wuhan, China

Recent patent applications by Yangtze Memory Technologies Co., Ltd.

Yangtze Memory Technologies Co., Ltd. based in , om has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2026-03-05

US20260068176A1

Electricity

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

#2 | 2025-12-04

US20250372184A1

Physics

METHOD OF REDUCING PROGRAM DISTURBANCE IN MEMORY DEVICE AND MEMORY DEVICE UTILIZING SAME

#3 | 2025-01-30

US20250038131A1

Electricity

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

#4 | 2025-01-30

US20250037770A1

Physics

MEMORY DEVICE AND PROGRAMMING METHOD THEREOF

#5 | 2024-11-21

US20240389296A1

Electricity

SEMICONDUCTOR STRUCTURE, FABRICATION METHOD THEREOF, MEMORY AND MEMORY SYSTEM

#6 | 2024-11-14 ✅ Patent 12,554,415 granted on 2026-02-17

US20240377968A1

Physics

MEMORY DEVICE WITH FAILED MAIN BANK REPAIR USING REDUNDANT BANK

AssigneeID:

629411 ⎘