208290 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AB compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
III-nitride multi-channel heterojunction interdigitated rectifier
#2702Compound semiconductor device and method for fabricating the same
#2703Boron phoshide-based compound semiconductor device, production method thereof and light-emitting diode
#2704Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes
#2705Metamorphic buffer on small lattice constant substrates
#2706wideband gap power semiconductor device having a low on-resistance and having a high avalanche capability used for power control
#2707Heterojunction bipolar transistor with a base layer that contains bismuth
#2708Semiconductor devices on misoriented substrates
#2709Tunnel junctions for long-wavelength VCSELs
#2710Thz detection employing modulation doped quantum well device structures
#2711Method of growing III-V compound semiconductor layer, substrate product, and semiconductor device
#2712Electron device which controls quantum chaos and quantum chaos controlling method
#2713Heterojunction bipolar transistor with a base layer that contains bismuth
#2714Group III-V compound semiconductor and group III-V compound semiconductor device using the same
#2715Power semiconductor device used for power control
#2716Method for increasing the speed of a light emitting biopolar transistor device
#2717Heterojunction bipolar transistor structure
#2718Compound semiconductor multilayer structure, hall device, and hall device manufacturing method
#2719High electron mobility transistor
#2720Manufacturable thin film gallium and nitrogen containing devices
#2721Low turn-on voltage GaN diodes having anode metal with consistent crystal orientation and preparation method thereof
#2722Heterogeneously integrated acoustoelectric amplifiers
#2723High mobility group-III nitride transistors with strained channels
#2724Manufacturable thin film gallium and nitrogen containing devices
#2725Semiconductor device and method for manufacturing the same
#2726Manufacturable display based on thin film gallium and nitrogen containing light emitting diodes
#2727Manufacturable thin film gallium and nitrogen containing semiconductor devices
#2728Manufacturable thin film gallium and nitrogen containing devices integrated with silicon electronic devices
#2729Indium-gallium-nitride structures and devices
#2730Semiconductor structure for wide bandgap normally off MOSFET
#2731Electronic device including a high electron mobility transistor that includes a barrier layer having different portions
#2732Using threading dislocations in GaN/Si systems to generate physically unclonable functions
#2733Integration of vertical GaN varactor with HEMT
#2734Semiconductor structure, high electron mobility transistor, and method for fabricating semiconductor structure
#2735Systems, methods and apparatus for radio frequency devices
#2736Gallium arsenide cell and logic circuit
#2737High current density, low contact resistance wide bandgap contacts
#2738Self-aligned gallium nitride FinFET and method of fabricating the same
#2739P-n diodes and p-n-p heterojunction bipolar transistors with diamond collectors and current tunneling layers
#2740Manufacturable thin film gallium and nitrogen containing devices
#2741Complementary metal-oxide semiconductor (CMOS) integration with compound semiconductor devices
#2742Heterojunction bipolar transistors and method of fabricating the same
#2743GaN structures
#2744Semiconductor power device
#2745Semiconductor device, power supply circuit, and computer
#2746Semiconductor substrate and semiconductor device
#2747Monolithic integration of group III nitride epitaxial layers
#2748High electron mobility transistor structure
#2749Metal-semiconductor heterodimension field effect transistors (MESHFET) and high electron mobility transistor (HEMT) based device and method of making the same
#2750Recessed solid state apparatuses
#2751InGaAlP schottky field effect transistor with stepped bandgap ohmic contact
#2752III-V lateral bipolar integration with silicon
#2753Semiconductor device and method of manufacturing the same
#2754Contact plug for high-voltage devices
#2755Bi-stable static random access memory (SRAM) bit cells formed from III-V compounds and configured to achieve higher operating speeds
#2756Etched spin-qubit for high temperature operation
#2757Type III-V semiconductor device with integrated diode
#2758Nitride heterojunction bipolar transistor with polarization-assisted alloy hole-doped short-period superlattice emitter or collector layers
#2759Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes
#27603D integrated DC-DC power converters
#2761Non-polar, III-nitride semiconductor fin field-effect transistor
#2762Multiple layer quantum well FET with a side-gate
#2763Nitride semiconductor device
#2764Nitride semiconductor device
#2765Semiconductor device with multi-function P-type diamond gate
#2766Method for manufacturing a semiconductor device
#2767Resistive three-dimensional memory device with heterostructure semiconductor local bit line and method of making thereof
#2768Electronic device including a multiple channel HEMT and an insulated gate electrode
#2769Electronic device including a polycrystalline compound semiconductor layer and a process of forming the same
#27703D integrated DC-DC power converters
#2771Apparatus and method of fabrication for GaN/Si transistors isolation
#2772Electronic device including a multiple channel HEMT
#2773III-nitride semiconductor device with doped epi structures
#2774Semiconductor structure, HEMT structure and method of forming the same
#2775III-V vertical field effect transistors with tunable bandgap source/drain regions
#2776Semiconductor structure and methods
#2777Monolithic integration of group III nitride epitaxial layers
#2778P-type diamond gate-GaN heterojunction FET structure
#2779Protective insulator for HFET devices
#2780Method of forming a III-V compound semiconductor channel post replacement gate
#2781Embedded hydrogen inhibitors for semiconductor field effect transistors
#2782Microfluidic impingement jet cooled embedded diamond GaN HEMT
#2783Field plate for high-voltage field effect transistors
#2784HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same
#2785Self-stop gate recess etching process for semiconductor field effect transistors
#2786Resistive field structures for semiconductor devices and uses therof
#2787Enhancement mode high electron mobility transistor
#2788Nanowire field effect transistor (FET) and method for fabricating the same
#2789Self-aligned double gate recess for semiconductor field effect transistors
#2790Etch-based fabrication process for stepped field-plate wide-bandgap
#2791Heterostructure field-effect transistor
#2792III-V field effect transistor (FET) with reduced short channel leakage, integrated circuit (IC) chip and method of manufacture
#2793Semiconductor device with multiple carrier channels
#2794Integrated high performance lateral schottky diode
#2795Stepped field plate wide bandgap field-effect transistor and method
#2796III-V device structure with multiple threshold voltage
#2797Vertical super junction III/nitride HEMT with vertically formed two dimensional electron gas
#2798Doped barrier layers in epitaxial group III nitrides
#2799Fabrication methodology for optoelectronic integrated circuits
#2800Three-dimensional memory device having a heterostructure quantum well channel
#2801Defect reduction with rotated double aspect ratio trapping
#2802Self-aligned ITO gate electrode for GaN HEMT device
#2803Gallium nitride on high thermal conductivity material device and method
#2804GaN-based schottky diode having large bond pads and reduced contact resistance
#2805Manufacturable thin film gallium and nitrogen containing devices
#2806Digital alloy layer in a III-nitrade based heterojunction field effect transistor
#2807III-Nitride metal-insulator-semiconductor field-effect transistor
#2808Monolithically integrated self-aligned GaN-HEMTs and schottky diodes and method of fabricating the same
#2809Double heterojunction group III-nitride structures
#2810Monolithic integration of group III nitride epitaxial layers
#2811III-N material grown on ErAlN buffer on Si substrate
#2812Enhancement mode normally-off gallium nitride heterostructure field effect transistor
#2813Random access memory cells using spatial wavefunction switched field-effect transistors