208290 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AB compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Integration of III-V devices on Si wafers
#1802Methods and systems for ultra-high quality gated hybrid devices and sensors
#1803Semiconductor device and method for manufacturing semiconductor device
#1804METHODS TO ACHIEVE HIGH MOBILITY IN CLADDED III-V CHANNEL MATERIALS
#1805Semiconductor device and manufacturing method of semiconductor device
#1806Method of forming a semiconductor structure
#1807Reliable and robust electrical contact
#1808III-Nitride Switching Device with an Emulated Diode
#1809Biosensor based on heterojunction bipolar transistor
#1810BIOSENSOR BASED ON HETEROJUNCTION BIPOLAR TRANSISTOR
#1811Semiconductor device having stressor and method of forming the same
#1812MISFET device
#1813FIELD-EFFECT COMPOUND SEMICONDUCTOR DEVICE
#1814Method and structure for III-V FinFET
#1815SEMICONDUCTOR DEVICE AND METHOD OF MAKING INCLUDING CAP LAYER AND NITRIDE SEMICONDUCTOR LAYER
#1816Gate all around device structure and Fin field effect transistor (FinFET) device structure
#1817Nitride semiconductor element and nitride semiconductor wafer
#1818High resistance layer for III-V channel deposited on group IV substrates for MOS transistors
#1819Semiconductor device
#1820SEMICONDUCTOR DEVICE
#1821III-Nitride Device Having a Buried Insulating Region
#1822Deposited material and method of formation
#1823High power W-band/F-band Schottky diode based frequency multipliers
#1824Compound semiconductor device and method of manufacturing the same
#1825Reducing direct source-to-drain tunneling in field effect transistors with low effective mass channels
#1826Semiconductor devices and FinFETS
#1827Compound semiconductor device and manufacturing method of the same
#1828Compound gated semiconductor device having semiconductor field plate
#1829Method of manufacturing nitride semiconductor device
#1830Patterned back-barrier for III-nitride semiconductor devices
#1831Fin shape structure
#1832Fabrication process for mitigating external resistance of a multigate device
#1833HIGH ELECTRON MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF
#1834CARBON DOPING SEMICONDUCTOR DEVICES
#1835Semiconductor device
#1836SEMICONDUCTOR DEVICE
#1837Monolithic integrated semiconductor structure
#1838Reduced scale resonant tunneling field effect transistor
#1839Carbon doping semiconductor devices
#1840Field effect transistor with conduction band electron channel and uni-terminal response
#1841Method and structure to improve film stack with sensitive and reactive layers
#1842III-Nitride Semiconductor Structure with Intermediate and Transition Layers
#1843Group III nitride semiconductor device which can be used as a power transistor
#1844Semiconductor device having a semiconductor layer stacked body
#1845Field effect transistor
#1846Transistors, semiconductor devices, and methods of manufacture thereof
#1847Semiconductor device
#1848Apparatus and methods for forming a modulation doped non-planar transistor
#1849Cascode semiconductor device structure and method therefor
#1850Method of forming a high electron mobility semiconductor device and structure therefor
#1851Method to define the active region of a transistor employing a group III-V semiconductor material
#1852Method and structure for III-V FinFET
#1853Extreme high mobility CMOS logic
#1854MOSFETs with channels on nothing and methods for forming the same
#1855METHOD FOR FORMING NITRIDE SEMICONDUCTOR DEVICE
#1856Semiconductor substrate, semiconductor device and method of manufacturing the semiconductor device
#1857Method for forming an implanted area for a heterojunction transistor that is normally blocked
#1858Ohmic contact to semiconductor
#1859Integrated enhancement mode and depletion mode device structure and method of making the same
#1860Robust and Reliable Power Semiconductor Package
#1861High electron mobility transistor with periodically carbon doped gallium nitride
#1862Tunneling field effect transistor and methods of making such a transistor
#1863Semiconductor device and method of manufacturing the same
#1864Semiconductor composite film with heterojunction and manufacturing method thereof
#1865Semiconductor wafer including a monocrystalline semiconductor layer spaced apart from a poly template layer
#1866Method for growing III-V epitaxial layers
#1867Ohmic contact to semiconductor
#1868Semiconductor device and the method of manufacturing the same
#1869Semiconductor device having a polarization super junction field effect transistor, electric equipment, bidirectional field effect transistor, and mounted structure body having the same
#1870RF POWER TRANSISTOR
#1871Non-planar normally off compound semiconductor device
#1872Metalization of a field effect power transistor
#1873Semiconductor device, antenna switch circuit, and radio communication apparatus
#1874GaN structures
#1875SEMICONDUCTOR DEVICE
#1876SEMICONDUCTOR DEVICE
#1877Semiconductor device and field effect transistor with controllable threshold voltage
#1878SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
#1879SEMICONDUCTOR DEVICE
#1880Semiconductor device
#1881Heterojunction field effect transistor
#1882SEMICONDUCTOR DEVICE
#1883III-V SEMICONDUCTOR MATERIAL BASED AC SWITCH
#1884High electron mobility transistor with indium nitride layer
#1885Low external resistance channels in III-V semiconductor devices
#1886High-electron-mobility transistor having a buried field plate
#1887Semiconductor device and formation thereof
#1888Leakage current suppression methods and related structures
#1889High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss
#1890Enhancement mode III-N HEMTs
#1891III-nitride transistor with enhanced doping in base layer
#1892III-N material structure for gate-recessed transistors
#1893Semiconductor structure and recess formation etch technique
#1894Semiconductor device and a method for manufacturing a semiconductor device
#1895Heterosection tunnel field-effect transistor (TFET)
#1896Semiconductor device having a fin shell covering a fin core
#1897Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
#1898NITRIDE BASED SEMICONDUCTOR DEVICE
#1899Semiconductor apparatus
#1900TUNNELING FIELD EFFECT TRANSISTORS (TFETS) WITH UNDOPED DRAIN UNDERLAP WRAP-AROUND REGIONS
#1901Semiconductor device and method for manufacturing same
#1902NANOSTRUCTURES AND NANOFEATURES WITH Si (111) PLANES ON Si (100) WAFERS FOR III-N EPITAXY
#1903High-electron-mobility transistor with protective diode
#1904HETEROJUNCTION BIPOLAR TRANSISTOR WITH BLOCKING LAYER STRUCTURE
#1905III-V compound semiconductor device having dopant layer and method of making the same
#1906All around contact device and method of making the same
#1907SEMICONDUCTOR DEVICE
#1908Method for oxidizing a substrate surface using oxygen
#1909Tunneling field effect transistor having a three-side source and fabrication method thereof
#1910Electrodes for semiconductor devices and methods of forming the same
#1911Compound semiconductor device
#1912Semiconductor device
#1913Semiconductor wafer, semiconductor device, and method for manufacturing nitride semiconductor layer
#1914SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE
#1915SEMICONDUCTOR DEVICE
#1916Gate with self-aligned ledged for enhancement mode GaN transistors
#1917Low noise hybridized detector using charge transfer
#1918Semiconductor device and method of manufacturing the same
#1919Semiconductor device and method of manufacturing the same
#1920Nanowire field effect transistor device having a replacement gate
#1921Engineered substrate assemblies with epitaxial templates and related systems, methods, and devices
#1922Semiconductor device having GaN-based layer
#1923NITRIDE SEMICONDUCTOR DIODE
#1924METHOD AND APPARATUS FOR 3D CONCURRENT MULTIPLE PARALLEL 2D QUANTUM WELLS
#1925NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE
#1926A RADIO FREQUENCY POWER DEVICE FOR IMPLEMENTING ASYMMETRIC SELF-ALIGNMENT OF THE SOURCE, DRAIN AND GATE AND THE PRODUCTION METHOD THEREOF
#1927Semiconductor device
#1928METHOD AND APPARATUS FOR 3D CONCURRENT MULTIPLE PARALLEL 2D QUANTUM WELLS
#1929Semiconductor device which comprises transistor and diode
#1930SEMICONDUCTOR APPARATUS
#1931Nitride semiconductor transistor device
#1932Group III-V Transistor Utilizing a Substrate Having a Dielectrically-Filled Region
#1933Heterojunction bipolar transistor with two base layers
#1934INGAAS FINFET ON PATTERNED SILICON SUBSTRATE WITH INP AS A BUFFER LAYER
#1935HETEROJUNCTION BIPOLAR TRANSISTOR WITH IMPROVED CURRENT GAIN
#1936Fabrication of III-nitride power device with reduced gate to drain charge
#1937METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE PRODUCED THEREBY
#1938Group III-V device with a selectively modified impurity concentration
#1939Method for producing a microelectronic device
#1940Semiconductor device and fabrication method thereof
#1941Devices and methodologies related to structures having HBT and FET
#1942METHOD FOR CONTROLLING HEIGHT OF A FIN STRUCTURE
#1943Active photonic device having a Darlington configuration
#1944Compound semiconductor device and method of manufacturing the same
#1945Heterojunction bipolar transistors for improved radio frequency (RF) performance
#1946Method of forming III-V channel
#1947High Electron Mobility Transistors and Integrated Circuits with Improved Feature Uniformity and Reduced defects for Microwave and Millimetre Wave Applications
#1948All-electric spin field effect transistor
#1949Method of forming a reduced resistance fin structure
#1950High-quality GaN high-voltage HFETs on silicon
#1951High-mobility semiconductor heterostructures
#1952III-Nitride Device with Improved Transconductance
#1953Semiconductor heterojunction device
#1954Layer structure for a group-III-nitride normally-off transistor
#1955Circuit structure, transistor and semiconductor device
#1956Semiconductor device with selectively etched surface passivation
#1957Semiconductor device and manufacturing method thereof
#1958Semiconductor device with electron supply layer
#1959P-doping of group-III-nitride buffer layer structure on a heterosubstrate
#1960Semiconductor substrate
#1961Device isolation for III-V substrates
#1962Laminar structure of semiconductor and manufacturing method thereof
#1963Transistor structure having buried island regions
#1964Transistor with oxidized cap layer
#1965Semiconductor device and method
#1966Method of forming high electron mobility transistor
#1967Deep gate-all-around semiconductor device having germanium or group III-V active layer
#1968NUCLEATION AND BUFFER LAYERS FOR GROUP III-NITRIDE BASED SEMICONDUCTOR DEVICES
#1969High-voltage nitride device and manufacturing method thereof
#1970Group III-V Device Including a Shield Plate
#1971High electron mobility semiconductor device and method therefor
#1972III-V multi-channel FinFETs
#1973Incoherent type-III materials for charge carriers control devices
#1974Semiconductor devices with sharp gate edges and methods to fabricate same
#1975Semiconductor structure
#1976Varactor diode with heterostructure
#1977Compound semiconductor device having at least one buried semiconductor material region
#1978Enhancement mode III-nitride transistor
#1979Compound semiconductor device and method for fabricating the same
#1980Ferromagnet-free spin transistor and method for operating the same
#1981Semiconductor substrate for controlling a strain
#1982Power amplifier modules with bifet and harmonic termination and related systems, devices, and methods
#1983Power amplifier modules including bipolar transistor with grading and related systems, devices, and methods
#1984Power amplifier modules including wire bond pad and related systems, devices, and methods
#1985III-V TRANSISTOR AND METHOD FOR MANUFACTURING SAME
#1986Method for fabricating a semiconductor device including fin relaxation, and related structures
#1987Method for fabricating enhancement mode transistor
#1988Semiconductor heterobarrier electron device and method of making
#1989III-V semiconductor device having self-aligned contacts
#1990Devices, systems, and methods related to removing parasitic conduction in semiconductor devices
#1991Sidewall passivation for HEMT devices
#1992Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation
#1993Enhancement mode III-nitride device and method for manufacturing thereof
#1994Current aperture diode and method of fabricating the same
#1995Gallium nitride power devices using island topography
#1996Semiconductor device and method of fabricating semiconductor device
#1997Nitride semiconductor device and method for manufacturing nitride semiconductor device
#1998FET transistor on a III-V material structure with substrate transfer
#1999Field effect transistor
#2000Field-effect transistor
#2001Nitride semiconductor device
#2002Semiconductor device and method of manufacturing semiconductor device
#2003Semiconductor device and method of manufacturing the semiconductor device
#2004BONDED EPITAXIAL OXIDE STRUCTURES FOR COMPOUND SEMICONDUCTOR ON SILICON SUBSTRATES
#2005Field-effect transistor
#2006Semiconductor heterostructure with stress management
#2007Electronic device having quantum dots and method of manufacturing the same
#2008CMOS compatible method for manufacturing a HEMT device and the HEMT device thereof
#2009Compound semiconductor device and method of manufacturing the same
#2010Switching device
#2011Methods to improve the performance of compound semiconductor devices and field effect transistors
#2012Semiconductor device
#2013Defect-free relaxed covering layer on semiconductor substrate with lattice mismatch
#2014Composite substrate, semiconductor device including the same, and method of manufacturing the same
#2015Method for manufacturing a transistor device
#2016Method of manufacturing a semiconductor device
#2017III-nitride based semiconductor structure
#2018Selective gallium nitride regrowth on (100) silicon
#2019N-polar III-nitride transistors
#2020METHOD OF GROWING NITRIDE SEMICONDUCTOR DEVICE
#2021HETEROSTRUCTURE FIELD EFFECT TRANSISTOR HAVING HIGH EFFICIENCY AND METHOD OF PREPARING THE SAME
#2022Breakdown voltage multiplying integration scheme
#2023Compound semiconductor device having gallium nitride gate structures
#2024Semiconductor device and manufacturing method of the same
#2025SEMICONDUCTOR DEVICE
#2026SEMICONDUCTOR DEVICE
#2027Semiconductor device
#2028Semiconductor device
#2029SEMICONDUCTOR DEVICE
#2030Device isolation using preferential oxidation of the bulk substrate
#2031Operational Gallium Nitride devices
#2032Application of super lattice films on insulator to lateral bipolar transistors
#2033Semiconductor devices with core-shell structures
#2034SEMICONDUCTOR DEVICE
#2035SEMICONDUCTOR DEVICE
#2036SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#2037Method for growing epitaxies of a chemical compound semiconductor
#2038Group III nitride semiconductor device, p-type contact structure, and method for fabricating group III nitride semiconductor device
#2039Methods of forming III-V semiconductor structures using multiple substrates, and semiconductor devices fabricated using such methods
#2040Group III-nitride-based enhancement mode transistor having a heterojunction fin structure
#2041Directed epitaxial heterojunction bipolar transistor
#2042InGaN ohmic source contacts for vertical power devices
#2043Fabrication process for mitigating external resistance and interface state density in a multigate device
#2044Fabrication process for mitigating external resistance of a multigate device
#2045Methods of forming semiconductor devices and FinFETs
#2046III-Nitride High Electron Mobility Transistor Structures and Methods for Fabrication of Same
#2047Transistor-type viscosity sensor, and viscosity measurement system and viscosity measuring method using the same
#2048Transistor having nitride semiconductor used therein and method for manufacturing transistor having nitride semiconductor used therein
#2049Semiconductor heterostructure and method of fabrication thereof
#2050Group III-nitride-based enhancement mode transistor
#2051Nitride semiconductor device
#2052III-V semiconductor device having self-aligned contacts
#2053METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL TRANSISTOR
#2054III-V compound semiconductor device having metal contacts and method of making the same
#2055MECHANICALLY ROBUST SILICON SUBSTRATE HAVING GROUP IIIA-N EPITAXIAL LAYER THEREON
#2056High electron mobility transistor (HEMT) having an indium-containing layer and method of manufacturing the same
#2057Bipolar transistor having collector with grading
#2058High electron mobility transistors having improved reliability
#2059Semiconductor device
#2060Method of manufacturing precise semiconductor contacts
#2061Field effect transistor with heterostructure channel
#2062Semiconductor heterojunction device
#2063SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#2064Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack
#2065Inverted III-nitride P-channel field effect transistor with hole carriers in the channel
#2066Semiconductor device
#2067Semiconductor device using a nitride semiconductor
#2068Method for forming avalanche energy handling capable III-nitride transistors
#2069Methods of manufacturing high electron mobility transistors
#2070Nitride semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer
#2071Inverted P-channel III-nitride field effect tansistor with Hole Carriers in the channel
#2072Semiconductor multi-layer substrate and semiconductor element
#2073Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material
#2074Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material
#2075Enhancement mode device
#2076Nitride semiconductor epitaxial substrate and nitride semiconductor device
#2077Three-dimensional quantum well transistor
#2078Semiconductor device, transistor having doped seed layer and method of manufacturing the same
#2079TUNNELING FIELD EFFECT TRANSISTOR
#2080Tunneling field effect transistor
#2081Doped gallium nitride high-electron mobility transistor
#2082Epitaxial structures
#2083Nitride semiconductor device and fabricating method thereof
#2084Nitride semiconductor element and nitride semiconductor wafer
#2085Semiconductor device
#2086Semiconductor device
#2087Group 13 nitride composite substrate semiconductor device, and method for manufacturing group 13 nitride composite substrate
#2088ENHANCEMENT-MODE DEVICE
#2089Semiconductor device including gate electrode provided over active region in p-type nitride semiconductor layer and method of manufacturing the same, and power supply apparatus
#2090SURFACE-CONTROLLED SEMICONDUCTOR NANO-DEVICES, METHODS AND APPLICATIONS
#2091Nitride semiconductor device
#2092Semiconductor epitaxial structure and method for forming the same
#2093Semiconductor structure with compositionally-graded transition layer
#2094FIELD EFFECT TRANSISTOR
#2095Nitride semiconductor device and method of manufacturing the same
#2096Semiconductor device and manufacturing method of semiconductor device
#2097Active regions with compatible dielectric layers
#2098Semiconductor component with transistor
#2099METHOD FOR TREATING SURFACE OF SEMICONDUCTOR LAYER, SEMICONDUCTOR SUBSTRATE, METHOD FOR MAKING EPITAXIAL SUBSTRATE
#2100PRE-CUTTING A BACK SIDE OF A SILICON SUBSTRATE FOR GROWING BETTER III-V GROUP COMPOUND LAYER ON A FRONT SIDE OF THE SUBSTRATE