208290 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AB compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
III-N material structure for gate-recessed transistors
#2102FIELD-EFFECT TRANSISTOR
#2103Field effect semiconductor device
#2104Field effect transistor and method of fabricating the same
#2105Nitride semiconductor structure
#2106High performance III-nitride power device
#2107Radial nanowire Esaki diode devices and methods
#2108Method and Layer Structure for Preventing Intermixing of Semiconductor Layers
#2109Graphene-based plasmonic nano-transceiver employing HEMT for terahertz band communication
#2110Group III-V Voltage Converter with Monolithically Integrated Level Shifter, High Side Driver, and High Side Power Switch
#2111FinFET having superlattice stressor
#2112Nitride-based transistors having structures for suppressing leakage current
#2113III-V FET device with overlapped extension regions using gate last
#2114Transistor with a diffusion barrier
#2115Method for forming a nanowire field effect transistor device having a replacement gate
#2116Fault tolerant design for large area nitride semiconductor devices
#2117Schottky diode and method of fabricating the same
#2118III-nitride semiconductor structures with strain absorbing interlayers
#2119Semiconductor device
#2120Semiconductor device and a method for manufacturing a semiconductor device
#2121Methods of forming semiconductor structures including III-V semiconductor material using substrates comprising molybdenum, and structures formed by such methods
#2122Isolated gate field effect transistor and manufacture method thereof
#2123SEMICONDUCTOR WAFER, MANUFACTURING METHOD OF SEMICONDUCTOR WAFER AND METHOD FOR MAUNFACTURING COMPOSITE WAFER
#2124POWER DEVICE
#2125Semiconductor device and method for fabricating a semiconductor device
#2126Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layer
#2127Electronic device having carbon layer and method for manufacturing the same
#2128III-Nitride Semiconductor Device Fabrication
#2129SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#2130TRANSISTOR
#2131Semiconductor device and semiconductor substrate
#2132Semiconductor device and method of manufacturing the same
#2133Nitride semiconductor device and method for manufacturing same
#2134HEMT-compatible lateral rectifier structure
#2135ROTATED CHANNEL FIELD EFFECT TRANSISTOR
#2136Method of forming a semiconductor structure
#2137Group III-V Device Including a Buffer Termination Body
#2138Semiconductor device and method of manufacturing the same
#2139Gallium nitride devices with discontinuously graded transition layer
#2140Heterostructure including a composite semiconductor layer
#2141Semiconductor device with low-conducting buried and/or surface layers
#2142Enhanced device and manufacturing method therefor
#2143Vertical tunneling negative differential resistance devices
#2144Vertical transistor devices for embedded memory and logic technologies
#2145Engineered substrate assemblies with thermally opaque materials, and associated systems, devices, and methods
#2146Tunnel field-effect transistors with a gate-swing broken-gap heterostructure
#2147Compound semiconductor device and manufacturing method of the same
#2148Method of making a circuit structure having islands between source and drain
#2149Nitride semiconductor device
#2150Field effect transistor with conduction band electron channel and uni-terminal response
#2151Semiconductor device and field effect transistor with controllable threshold voltage
#2152Heterostructure power transistor with AlSiN passivation layer
#2153SEMICONDUCTOR DEVICE WITH BUFFER LAYER MADE OF NITRIDE SEMICONDUCTOR
#2154GaN based semiconductor device
#2155SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#2156Semiconductor device including an electrode structure formed on nitride semiconductor layers
#2157SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, SCHOTTKY BARRIER DIODE, AND FIELD EFFECT TRANSISTOR
#2158Heterostructure with carrier concentration enhanced by single crystal REO induced strains
#2159HETEROJUNCTION FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
#2160GROUP III NITRIDE SEMICONDUCTOR MULTILAYER SUBSTRATE AND GROUP III NITRIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR
#2161SEMICONDUCTOR DEVICE
#2162NITRIDE-BASED TRANSISTORS AND METHODS OF FABRICATING THE SAME
#2163Polarization induced doped transistor
#2164Semiconductor device
#2165Method of making high electron mobility transistor structure
#2166Methods relating to a group III HFET with a graded barrier layer
#2167LOCAL INTERCONNECTS BY METAL-III-V ALLOY WIRING IN SEMI-INSULATING III-V SUBSTRATES
#2168Semiconductor gallium arsenide compatible epitaxial ferroelectric devices for microwave tunable application
#2169Gallium arsenide based device having a narrow band-gap semiconductor contact layer
#2170Compound semiconductor device and method of fabricating the same
#2171Semiconductor device
#2172Transistor having an ohmic contact by gradient layer and method of making the same
#2173Semiconductor device including a trench with a corner having plural tapered portions
#2174SEMICONDUCTOR DIODES WITH LOW REVERSE BIAS CURRENTS
#2175Semiconductor devices and methods of manufacturing the same
#2176Semiconductor apparatus and manufacturing method of the semiconductor apparatus
#2177Method of manufacturing semiconductor device
#2178Compound semiconductor device and method of manufacturing the same
#2179Aluminum nitride based semiconductor devices
#2180High electron mobility transistor and method of forming the same
#2181Lateral/vertical semiconductor device with embedded isolator
#2182III-V semiconductor device having self-aligned contacts
#2183III-nitride semiconductor device with reduced electric field between gate and drain
#2184Junction barrier Schottky diode and manufacturing method thereof
#2185Method for making electronic device using group III nitride semiconductor having specified dislocation density oxygen/electron concentration, and active layer thickness
#2186Electronic device using group III nitride semiconductor having specified dislocation density, oxygen/electron concentration, and active layer thickness
#2187Electronic device and epitaxial multilayer wafer of group III nitride semiconductor having specified dislocation density, oxygen/electron concentration, and active layer thickness
#2188III-V compound semiconductor device having metal contacts and method of making the same
#2189III-Nitride device with solderable front metal
#2190III-nitride semiconductor device with reduced electric field
#2191Gallium nitride power semiconductor device having a vertical structure
#2192Device comprising a III-N layer stack with improved passivation layer and associated manufacturing method
#2193Selectively area regrown III-nitride high electron mobility transistor
#2194Nitride semiconductor element, nitride semiconductor wafer, and method for forming nitride semiconductor layer
#2195Overlapped III-V finfet with doped semiconductor extensions
#2196Overlapped III-V finFET with doped semiconductor extensions
#2197Fin tunnel field effect transistor (FET)
#2198Semiconductor device and method for fabricating the same
#2199Semiconductor multi-layer substrate, semiconductor device, and method for manufacturing the same
#2200GaN-based Schottky barrier diode with algan surface layer
#2201High quality GaN high-voltage HFETs on silicon
#2202Gate stack for normally-off compound semiconductor transistor
#2203Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor
#2204METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE
#2205Method of controlling stress in group-III nitride films deposited on substrates
#2206Trench high electron mobility transistor device
#2207SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#2208Thin-film hybrid complementary circuits
#2209High electron mobility bipolar transistor
#2210GaN substrate, semiconductor device and method for fabricating GaN substrate and semiconductor device
#2211Semiconductor device and method of manufacturing the same
#2212Thin-film hybrid complementary circuits
#2213Compound semiconductor device
#2214Gallium nitride semiconductor structures with compositionally-graded transition layer
#2215Low-defect semiconductor device and method of manufacturing the same
#2216Tunnel field effect transistor and method for making thereof
#2217Epitaxial wafer for heterojunction type field effect transistor
#2218Field effect transistor structure comprising a stack of vertically separated channel nanowires
#2219Direct wafer bonding
#2220Semiconductor device and method of manufacturing semiconductor device
#2221Enhanced GaN transistor and the forming method thereof
#2222High voltage III-nitride semiconductor devices
#2223Group III-V device with a selectively modified impurity concentration
#2224Group III-V device with a selectively reduced impurity concentration
#2225Semiconductor device, antenna switch circuit, and radio communication apparatus
#2226Non-planar semiconductor device having active region with multi-dielectric gate stack
#2227Substrate having hetero-structure, method for manufacturing the same and nitride semiconductor light emitting device using the same
#2228Methods of manufacturing the gallium nitride based semiconductor devices
#2229Group III nitride semiconductor frequency multiplier
#2230HEMT TRANSISTORS CONSISTING OF (III-B)-N WIDE BANDGAP SEMICONDUCTORS COMPRISING BORON
#2231Bipolar transistor having laterally extending collector
#2232HYBRID INTEGRATION OF GROUP III-V SEMICONDUCTOR DEVICES ON SILICON
#2233Method for obtaining a heterogeneous substrate for the production of semiconductors
#2234Semiconductor device and method of manufacturing the same
#2235Semiconductor device and manufacturing method
#2236Semiconductor device with plural electrodes formed on substrate
#2237Compound semiconductor device and manufacturing method therefor
#2238Methods for growing III-V materials on a non III-V material substrate
#2239Compound semiconductor device, power source device and high frequency amplifier and method for manufacturing the same
#2240MULTIPLE QUANTUM WELL STRUCTURE
#2241METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER, AND SEMICONDUCTOR WAFER
#2242Methods for forming semiconductor materials in STI trenches
#2243Heterostructures for semiconductor devices and methods of forming the same
#2244Semiconductor structures having active regions comprising InGaN, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures
#2245Semiconductor structures having active regions comprising InGaN, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures
#2246High electron mobility semiconductor device and method therefor
#2247III-nitride transistor with engineered substrate
#2248Nitride-based semiconductor device
#2249High-electron-mobility transistor
#2250Semiconductor structure including buffer with strain compensation layers
#2251III-N material grown on AIO/AIN buffer on Si substrate
#2252Semiconductor structures including stacks of indium gallium nitride layers
#2253Low-resistivity p-type GaSb quantum wells
#2254Semiconductor device and method for manufacturing the same
#2255Integrated power device with III-nitride half bridges
#2256Compressive strained III-V complementary metal oxide semiconductor (CMOS) device
#2257Metal alloy with an abrupt interface to III-V semiconductor
#2258Engineered substrate assemblies with epitaxial templates and related systems, methods, and devices
#2259Field effect transistor
#2260Reduced scale resonant tunneling field effect transistor
#2261COMPOSITIONALLY GRADED NITRIDE-BASED HIGH ELECTRON MOBILITY TRANSISTOR
#2262Rectifying device, transistor, and rectifying method
#2263Semiconductor heterostructure field effect transistor and method for making thereof
#2264Transistor with enhanced channel charge inducing material layer and threshold voltage control
#2265Optoelectronic semiconductor body and method for producing an optoelectronic semiconductor body
#2266Semiconductor device
#2267Gallium nitride devices with aluminum nitride intermediate layer
#2268NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#2269Hetero-substrate, nitride-based semiconductor light emitting device, and method for manufacturing the same
#2270HEMT with compensation structure
#2271Nitride semiconductor element and nitride semiconductor wafer
#2272Monolithic HBT with wide-tuning range varactor
#2273Semiconductor structure or device integrated with diamond
#2274Strain inducing semiconductor regions
#2275Schottky diode structure and method of fabrication
#2276NITRIDE SEMICONDUCTOR STRUCTURE
#2277Semiconductor device
#2278Gallium nitride devices with gallium nitride alloy intermediate layer
#2279Devices, systems, and methods related to removing parasitic conduction in semiconductor devices
#2280Semiconductor device and method of manufacturing the device
#2281Epitaxial buffer layers for group III-N transistors on silicon substrates
#2282Enhancement-mode GaN MOSFET with low leakage current and improved reliability
#2283Semiconductor device and driving method thereof
#2284High breakdown voltage III-N depletion mode MOS capacitors
#2285SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
#2286Semiconductor apparatus
#2287Semiconductor apparatus having nitride semiconductor buffer layer doped with at least one of Fe, Si, and C
#2288Power switching device and method of manufacturing the same
#2289Nitride semiconductor based power converting device
#2290Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation
#2291Bidirectional heterojunction compound semiconductor protection devices and methods of forming the same
#2292Switching element utilizing recombination
#2293Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack
#2294Field effect transistor containing a group III nitride semiconductor as main component
#2295Nitride compound semiconductor device and manufacturing method thereof
#2296Semiconductor device and method for manufacturing same
#2297Pre-cutting a back side of a silicon substrate for growing better III-V group compound layer on a front side of the substrate
#2298Gallium nitride devices with aluminum nitride alloy intermediate layer
#2299Semiconductor material doping
#2300Compound semiconductor device and method of fabricating the same
#2301Semiconductor device
#2302Transistors, semiconductor devices, and methods of manufacture thereof
#2303Nitride semiconductor wafer for a high-electron-mobility transistor and its use
#2304BiHEMT device having a stacked separating layer
#2305Group III-V device with strain-relieving layers
#2306Semiconductor heterostructure diodes
#2307Nitride semiconductor and fabricating method thereof
#2308GATED CIRCUIT STRUCTURE WITH ULTRA-THIN, EPITAXIALLY-GROWN TUNNEL AND CHANNEL LAYER
#2309Growth of multi-layer group III-nitride buffers on large-area silicon substrates and other substrates
#2310SUBSTRATE COMPRISING SI-BASE AND INAS-LAYER
#2311Layered semiconductor substrate with reduced bow having a group III nitride layer and method for manufacturing it
#2312Growth of multi-layer group III-nitride buffers on large-area silicon substrates and other substrates
#2313Schottky diode
#2314Field effect transistor device
#2315Semiconductor device, HEMT device, and method of manufacturing semiconductor device
#2316High breakdown voltage III-nitride device
#2317Dual mode tilted-charge devices and methods
#2318Method for fabricating a monolithic integrated composite group III-V and group IV semiconductor device
#2319Vertical tunnel field effect transistor (FET)
#2320Vertical tunneling negative differential resistance devices
#2321III-V compound semiconductor device having metal contacts and method of making the same
#2322Integrated Composite Group III-V and Group IV Semiconductor Device
#2323NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE
#2324Power amplifier modules including related systems, devices, and methods
#2325Static discharge system
#2326SWITCHING DEVICE WITH CHARGE DISTRIBUTION STRUCTURE
#2327Strain-inducing semiconductor regions
#2328HETEROJUNCTION BIPOLAR TRANSISTOR WITH IMPROVED CURRENT GAIN AND A FABRICATION METHOD THEREOF
#2329Semiconductor device with selectively etched surface passivation
#2330Current aperture diode and method of fabricating same
#2331Monolithic integrated composite group III-V and group IV device
#2332Junctionless accumulation-mode devices on decoupled prominent architectures
#2333Integrated epitaxial structure for compound semiconductor devices
#2334Multilayer substrate structure and method of manufacturing the same
#2335Monolithic compound semiconductor structure
#2336SEMICONDUCTOR DEVICE, SUPERLATTICE LAYER USED IN THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#2337pHEMT HBT INTEGRATED EPITAXIAL STRUCTURE AND A FABRICATION METHOD THEREOF
#2338HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same
#2339Compound semiconductor device
#2340SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#2341Semiconductor device and manufacturing method of the same
#2342III-V COMPOUND SEMICONDUCTOR DEVICE HAVING DOPANT LAYER AND METHOD OF MAKING THE SAME
#2343Method for fabricating semiconductor device and the semiconductor device
#2344Semiconductor device and method of manufacturing the same
#2345Semiconductor heterobarrier electron device and method of making
#2346Bipolar transistor having collector with grading
#2347PVD buffer layers for LED fabrication
#2348As/Sb Compound Semiconductors Grown on Si or Ge Substrate
#2349Semiconductor device channel system and method
#2350Group III-N HFET with a graded barrier layer
#2351SCHOTTKY BARRIER DIODE AND MANUFACTURING METHOD THEREOF
#2352III-nitride heterojunction device
#2353N-polar III-nitride transistors
#2354MOSFETs with channels on nothing and methods for forming the same
#2355Method for forming group III/V conformal layers on silicon substrates
#2356Semiconductor device
#2357III-nitride heterojunction device
#2358Semiconductor device and method for manufacturing semiconductor device
#2359High electron mobility transistor and method of forming the same
#2360Compound semiconductor device and manufacturing method of the same
#2361Nitride semiconductor device and method for manufacturing same
#2362Monolithic high voltage multiplier having high voltage semiconductor diodes and high-k capacitors
#2363Plasma protection diode for a HEMT device
#2364III-nitride multi-channel heterojunction device
#2365Breakdown voltage multiplying integration scheme
#2366FinFET having superlattice stressor
#2367Methods of forming semiconductor structures including III-V semiconductor material using substrates comprising molybdenum
#2368Semiconductor structures and methods with high mobility and high energy bandgap materials
#2369Semiconductor device and method for fabricating a semiconductor device
#2370Ohmic contact to semiconductor
#2371Method for treating a substrate and a substrate
#2372Semiconductor device and manufacturing method thereof
#2373InGaN-Based Double Heterostructure Field Effect Transistor and Method of Forming the Same
#2374Nanoscale emitters with polarization grading
#2375NITRIDE BASED HETEROJUNCTION SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#2376Nitride based heterojunction semiconductor device and manufacturing method thereof
#2377Semiconductor wafer and insulated gate field effect transistor
#2378SEMICONDUCTOR-STACKED SUBSTRATE, SEMICONDUCTOR CHIP, AND METHOD FOR PRODUCING SEMICONDUCTOR-STACKED SUBSTRATE
#2379High electron mobility transistor
#2380Carrier mobility in surface-channel transistors, apparatus made therewith, and system containing same
#2381SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#2382Compound semiconductor device with buried field plate
#2383Nitride semiconductor device
#2384III-V semiconductor devices with buried contacts
#2385Ingan ohmic source contacts for vertical power devices
#2386Compound semiconductor device and manufacturing method of the same
#2387High quality GaN high-voltage HFETS on silicon
#2388Pseudo-substrate for use in the production of semiconductor components and method for producing a pseudo-substrate
#2389Circuit structure having islands between source and drain
#2390Substrate breakdown voltage improvement for group III-nitride on a silicon substrate
#2391Split-channel transistor and methods for forming the same
#2392Formation of devices by epitaxial layer overgrowth
#2393Nitride semiconductor diode
#2394High electron mobility transistor structure with improved breakdown voltage performance
#2395Compound semiconductor device and manufacturing method of the same
#2396Gallium nitride-based schottky barrier diode with aluminum gallium nitride surface layer
#2397Aluminum gallium nitride etch stop layer for gallium nitride based devices
#2398DEVICE STRUCTURE INCLUDING HIGH-THERMAL-CONDUCTIVITY SUBSTRATE
#2399Self-aligned sidewall gate GaN HEMT
#2400Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor device