208290 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AB compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Semiconductor device and field effect transistor
#2402Heterojunction field-effect transistor with field plate connected to gate or source electrode
#2403Gallium nitride semiconductor structures with compositionally-graded transition layer
#2404HOLE BLOCKING LAYER FOR THE PREVENTION OF HOLE OVERFLOW AND NON-RADIATIVE RECOMBINATION AT DEFECTS OUTSIDE THE ACTIVE REGION
#2405Gallium arsenide heterojunction semiconductor structure
#2406Compound semiconductor device and method for fabricating
#2407III-V multi-channel FinFETs
#2408FIELD EFFECT TRANSISTOR, METHOD FOR PRODUCING THE SAME, AND ELECTRONIC DEVICE
#2409Deposited material and method of formation
#2410MANUFACTURING METHOD OF COMPOUND SEMICONDUCTOR DEVICE
#2411Compound semiconductor device and manufacturing therefor
#2412Semiconductor device
#2413Group III-V device structure having a selectively reduced impurity concentration
#2414Method of forming a semiconductor structure
#2415Semiconductor device and method for manufacturing the same
#2416High mobility electron transistor
#2417Semiconductor device
#2418Semiconductor device having schottky diode structure
#2419Semiconductor Device with Low-Conducting Field-controlling Element
#2420Deposition methods for the formation of III/V semiconductor materials, and related structures
#2421Epitaxial substrate and method for manufacturing epitaxial substrate
#2422GaN-BASED SEMICONDUCTOR DEVICE
#2423HEMT with integrated low forward bias diode
#2424Semiconductor device and manufacturing method of semiconductor device
#2425III-nitride metal insulator semiconductor field effect transistor
#2426Power semiconductor device
#2427Nitride-based heterojunction semiconductor device and method for the same
#2428Monolithic integrated semiconductor structure
#2429Gated AlGaN/GaN Schottky device
#2430Method of manufacturing a nitride semiconductor epitaxial substrate
#2431Method for forming antimony-based FETs monolithically
#2432CMOS compatible method for manufacturing a HEMT device and the HEMT device thereof
#2433Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown P-type gallium nitride as a current blocking layer
#2434Devices comprising coated semiconductor nanocrystal heterostructures
#2435METHOD FOR FORMING NITRIDE SEMICONDUCTOR DEVICE
#2436Unipolar diode with low turn-on voltage
#2437OPTICALLY TRANSPARENT CONDUCTORS
#2438Semiconductor device
#2439Structure and Method for Monolithically Fabrication Sb-Based E/D Mode MISFETs
#2440GALLIUM NITRIDE OR OTHER GROUP III/V-BASED SCHOTTKY DIODES WITH IMPROVED OPERATING CHARACTERISTICS
#2441High electron mobility transistors and methods of manufacturing the same
#2442Vertical tunneling negative differential resistance devices
#2443Semiconductor device and method for manufacturing same
#2444Semiconductor heterostructure diodes
#2445NITRIDE SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
#2446Termination and Contact Structures for a High Voltage Gan-Based Heterojunction Transistor
#2447Twin-drain spatial wavefunction switched field-effect transistors
#2448Semiconductor device, field-effect transistor, and electronic device
#2449Semiconductor device and its fabrication method
#2450Nitride semiconductor device
#2451Deposition methods for the formation of III/V semiconductor materials, and related structures
#2452III-Nitride semiconductor structures with strain absorbing interlayer transition modules
#2453Group III nitride epitaxial laminate substrate
#2454Wafer, crystal growth method, and semiconductor device
#2455Electrode configurations for semiconductor devices
#2456Semiconductor diodes with low reverse bias currents
#2457Compound semiconductor device and method for manufacturing the same
#2458Semiconductor apparatus including protective film on gate electrode and method for manufacturing the semiconductor apparatus
#2459III-nitride heterojunction devices having a multilayer spacer
#2460Field effect transistor, semiconductor switch circuit, and communication apparatus
#2461Semiconductor device including gate electrode provided over active region in P-type nitride semiconductor layer and method of manufacturing the same, and power supply apparatus
#2462Semiconductor device and field effect transistor
#2463Extreme high mobility CMOS logic
#2464NANOWIRE TUNNEL DIODE AND METHOD FOR MAKING THE SAME
#2465Low gate-leakage structure and method for gallium nitride enhancement mode transistor
#2466Ohmic contact to semiconductor device
#2467Method and Layer Structure for Preventing Intermixing of Semiconductor Layers
#2468Junctionless accumulation-mode devices on prominent architectures, and methods of making same
#2469Epitaxial substrate with intermediate layers for reinforcing compressive strain in laminated composition layers and manufacturing method thereof
#2470Stress modulated group III-V semiconductor device and related method
#2471Method of manufacturing semiconductor device
#2472NITRIDE BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#2473Devices and methodologies related to structures having HBT and FET
#2474Direct wafer bonding
#2475Gallium nitride semiconductor structures with compositionally-graded transition layer
#2476Nitride semiconductor element and nitride semiconductor package
#2477Ohmic contact to semiconductor
#2478Semiconductor chip carriers with monolithically integrated quantum dot devices and method of manufacture thereof
#2479Structure of heterojunction field effect transistor and a fabrication method thereof
#2480Methods Of Manufacturing High Electron Mobility Transistors
#2481NITRIDE SEMICONDUCTOR DEVICE
#2482GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
#2483HETEROJUNCTION BIOPLAR TRANSISTOR STRUCTURE WITH GaPSbAs BASE
#2484Formation of devices by epitaxial layer overgrowth
#2485Method of controlling stress in group-III nitride films deposited on substrates
#2486Methods of manufacturing the gallium nitride based semiconductor devices
#2487Gallium nitride based semiconductor devices and methods of manufacturing the same
#2488Strain inducing semiconductor regions
#2489Growth of multi-layer group III-nitride buffers on large-area silicon substrates and other substrates
#2490SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND POWER SUPPLY APPARATUS
#2491Semiconductor device and method of manufacturing the same
#2492STRAIN CONTROL IN SEMICONDUCTOR DEVICES
#2493UNIAXIAL TENSILE STRAIN IN SEMICONDUCTOR DEVICES
#2494NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#2495Tunnel field effect transistor and method of manufacturing same
#2496Nitride semiconductor device
#2497SWITCHING DEVICE, RADIO FREQUENCY SIGNAL SWITCH, AND RADIO FREQUENCY SIGNAL AMPLIFICATION MODULE
#2498III-nitride switching device with an emulated diode
#2499Bipolar transistor
#2500Compound semiconductor device and manufacturing method of the same
#2501High electron mobility transistors including lightly doped drain regions and methods of manufacturing the same
#2502Compound semiconductor device and manufacturing method of the same
#2503Ultra high voltage GaN ESD protection device
#2504Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication
#2505Method for fabricating a III-nitride semiconductor device
#2506P-type field-effect transistor and method of production
#2507III-nitride power semiconductor device
#2508Compound semiconductor epitaxial substrate and manufacturing method thereof
#2509Field effect transistor and method of manufacturing the same
#2510PROCESS FOR FORMING LOW DEFECT DENSITY HETEROJUNCTIONS
#2511Field effect transistor and method for fabricating the same
#2512Termination and contact structures for a high voltage GaN-based heterojunction transistor
#2513Semiconductor heterostructure nanowire devices
#2514Low power floating body memory cell based on low-bandgap-material quantum well
#2515NITRIDE SEMICONDUCTOR DEVICE
#2516III-nitride power device with solderable front metal
#2517Step doping in extensions of III-V family semiconductor devices
#2518Field effect transistor with conduction band electron channel and uni-terminal response
#2519Methods and apparatus for antimonide-based backward diode millimeter-wave detectors
#2520Gallium nitride power devices using island topography
#2521Enhancement-mode GaN MOSFET with low leakage current and improved reliability
#2522Method for forming antimony-based FETs monolithically
#2523Remote Doped High Performance Transistor Having Improved Subthreshold Characteristics
#2524Techniques for forming contacts to quantum well transistors
#2525Semiconductor device having diode characteristic
#2526Monolithic integrated composite group III-V and group IV semiconductor device and method for fabricating same
#2527Apparatus and methods for forming a modulation doped non-planar transistor
#2528Highly conductive source/drain contacts in III-nitride transistors
#2529Method for fabricating a monolithic integrated composite group III-V and group IV semiconductor device
#2530Gated AlGaN/GaN heterojunction Schottky device
#2531Compound semiconductor device with T-shaped gate electrode
#2532Semiconductor heterostructure diodes
#2533Enhancement mode III-nitride transistors with single gate Dielectric structure
#2534Semiconductor device and driving method thereof
#2535Field-effect transistor with compositionally graded nitride layer on a silicaon substrate
#2536Application-oriented nitride substrates for epitaxial growth of electronic and optoelectronic device structures
#2537Compound semiconductor device and method for fabricating the same
#2538Group III-V semiconductor device with strain-relieving interlayers
#2539Semiconductor device and method for manufacturing of the same
#2540Semiconductor buffer architecture for III-V devices on silicon substrates
#2541Device and method for manipulating direction of motion of current carriers
#2542PROCESS FOR FORMING LOW DEFECT DENSITY HETEROJUNCTIONS
#2543Semiconductor device and method for manufacturing same
#2544Fabrication of single or multiple gate field plates
#2545Semiconductor wafer, semiconductor device, and method of manufacturing a semiconductor device
#2546Semiconductor wafer including lattice matched or pseudo-lattice matched buffer and GE layers, and electronic device
#2547Transistors and rectifiers utilizing hybrid electrodes and methods of fabricating the same
#2548Strain-inducing semiconductor regions
#2549Semiconductor nanocrystal heterostructures
#2550Rounded three-dimensional germanium active channel for transistors and sensors
#2551Transistor with enhanced channel charge inducing material layer and threshold voltage control
#2552Semiconductor device and manufacturing method of the same
#2553GaN single-crystal mass and method of its manufacture, and semiconductor device and method of its manufacture
#2554Monolithic vertically integrated composite group III-V and group IV semiconductor device and method for fabricating same
#2555High voltage III-nitride semiconductor devices
#2556Carrier mobility in surface-channel transistors, apparatus made therewith, and systems containing same
#2557Inorganic Nanocrystal Bulk Heterojunctions
#2558SEMICONDUCTOR DEVICE
#2559HIGH-ELECTRON MOBILITY TRANSISTOR
#2560Dopant diffusion modulation in GaN buffer layers
#2561Electronic device with controlled electrical field
#2562Bumped, self-isolated GaN transistor chip with electrically isolated back surface
#2563Group-III nitride structure including a fine wall-shaped structure containing a group-III nitridesemiconductor crystal and method for producing a group-III nitride structure including a fine wall-shaped structure containing a group-III nitride semiconductor crystal
#2564Semiconductor device
#2565Double heterojunction bipolar transistor having graded base region
#2566Nitride semiconductor device having graded aluminum content
#2567Semiconductor device and method for manufacturing the same
#2568Semiconductor device
#2569III nitride electronic device and III nitride semiconductor epitaxial substrate
#2570Twin-drain spatial wavefunction switched field-effect transistors
#2571GaN HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) STRUCTURES
#2572Formation of devices by epitaxial layer overgrowth
#2573Hyperabrupt Diode Structure And Method For Making Same
#2574Modulation-doped halo in quantum well field-effect transistors, apparatus made therewith, and methods of using same
#2575HETERO JUNCTION BIPOLAR TRANSISTOR
#2576Manufacture method of a multilayer structure having non-polar a-plane {11-20} III-nitride layer
#2577SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#2578HETEROJUNCTION BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF
#2579Apparatus and methods for forming a modulation doped non-planar transistor
#2580Tunnel field effect transistor and method of manufacturing same
#2581Semiconductor heterostructure diodes
#2582Semiconductor device having hetero junction
#2583Quantum well field-effect transistors with composite spacer structures, apparatus made therewith, and methods of using same
#2584Memory cell, and method for storing data
#2585NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR PACKAGE, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE
#2586Semiconductor device having metal oxide film
#2587III-nitride device with back-gate and field plate for improving transconductance
#2588Semiconductor device having stacked InGaP and GaAs layers, and method of making same
#2589Power transistor
#2590Semiconductor device employing group III-V nitride semiconductors and method for manufacturing the same
#2591MIS FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
#2592Semiconductor nanowire transistor
#2593Methods of forming buffer layer architecture on silicon and structures formed thereby
#2594P-N junction for use as an RF mixer from GHZ to THZ frequencies
#2595Devices comprising coated semiconductor nanocrystals heterostructures
#2596Dopant confinement in the delta doped layer using a dopant segregration barrier in quantum well structures
#2597Semiconductor nanowire vertical device architecture
#2598Semiconductor heterostructure nanowire devices
#2599Heterojunction bipolar transistor device with electrostatic discharge ruggedness
#2600Low power floating body memory cell based on low bandgap material quantum well
#2601MIS field effect transistor and method for manufacturing the same
#2602GaN based semiconductor element
#2603High linearity doped-channel FET
#2604Enhancement mode III-N HEMTs
#2605Method of manufacturing semiconductor device
#2606Method of controlling stress in gallium nitride films deposited on substrates
#2607Double quantum well structures for transistors
#2608Warp-free semiconductor wafer, and devices using the same
#2609Buffer layers for device isolation of devices grown on silicon
#2610NOVEL FABRICATION OF SEMICONDUCTOR QUANTUM WELL HETEROSTRUCTURE DEVICES
#2611NITRIDE SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS INCLUDING THE SAME
#2612Field effect transistor having semiconductor operating layer formed with an inclined side wall
#2613Nitride semiconductor device and method for producing nitride semiconductor device
#2614Compound semiconductor device and method for fabricating the same
#2615Normally-off electronic switching device for on-off control of electric circuit
#2616Spin transistor using epitaxial ferromagnet-semiconductor junction
#2617Transistor device and method
#2618Semiconductor superjunction structure
#2619Semiconductor device with Schottky and ohmic electrodes in contact with a heterojunction
#2620Gallium nitride materials and methods
#2621Method of manufacturing In(As)Sb semiconductor on lattice-mismatched substrate and semiconductor device using the same
#2622Quantum well intermixing
#2623SEMICONDUCTOR DEVICE AND INTEGRATED SEMICONDUCTOR CIRCUIT DEVICE
#2624Compound semiconductor device with T-shaped gate electrode and its manufacture
#2625Individually controlled multiple III-nitride half bridges
#2626III-nitride semiconductor device with reduced electric field between gate and drain and process for its manufacture
#2627Low voltage transistors
#2628Semiconductor Device with OHMIC Contact and Method of Making the Same
#2629Space-charge-free semiconductor and method
#2630NITRIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER INCLUDING THE SAME
#2631Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor
#2632METHOD AND APPARATUS FOR FORMING A SEMI-INSULATING TRANSITION INTERFACE
#2633III-nitride power semiconductor device
#2634Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
#2635SOI field effect transistor having asymmetric junction leakage
#2636Semiconductor chip having a reduced band offset in its p-doped region and method for producing the semiconductor chip
#2637Compound semiconductor device and manufacturing method of the same
#2638Gallium nitride-on-silicon interface using multiple aluminum compound buffer layers
#2639SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD THEREOF
#2640III-nitride heterojunction device
#2641Nitride semiconductor device
#2642SEMICONDUCTOR STRUCTURE HAVING PLURAL BACK-BARRIER LAYERS FOR IMPROVED CARRIER CONFINEMENT
#2643Semiconductor device
#2644Termination and contact structures for a high voltage GaN-based heterojunction transistor
#2645Growth of AsSb-Based Semiconductor Structures on InP Substrates Using Sb-Containing Buffer Layers
#2646Field effect transistor and method for fabricating the same
#2647Semiconductor substrate with AlGaN formed thereon and semiconductor device using the same
#2648Buffer architecture formed on a semiconductor wafer
#2649III-nitride semiconductor device
#2650Method of uniform current distribution using current modified layer
#2651III nitride power device with reduced Q
#2652Heterojunction bipolar transistor having (In)(Al) GaAsSb/InGaAs base-collector structure
#2653Dopant confinement in the delta doped layer using a dopant segregation barrier in quantum well structures
#2654Strain-inducing semiconductor regions
#2655Ballistic deflection transistor and logic circuits based on same
#2656Optoelectronic circuit employing a heterojunction thyristor device to convert a digital optical signal to a digital electrical signal
#2657Active regions with compatible dielectric layers
#2658Transistor structure and manufacturing method thereof
#2659Method for manufacturing a semiconductor device on GAN substrate having surface bidirectionally inclined toward <1-100> and <11-20> directions relative to {0001} crystal planes
#2660Method of controlling stress in gallium nitride films deposited on substrates
#2661Nitride semiconductor device
#2662Buffer layers for device isolation of devices grown on silicon
#2663Dislocation-free InSb quantum well structure on Si using novel buffer architecture
#2664Process for forming low defect density heterojunctions
#2665III-nitride power semiconductor device
#2666Oscillator and imaging apparatus utilizing resonant tunneling diode structure
#2667Semiconductor superjunction structure
#2668Method of fabricating a semiconductor device
#2669Semiconductor buffer architecture for III-V devices on silicon substrates
#2670Quantum device, control method thereof and manufacturing method thereof
#2671Semiconductor device, semiconductor layer and production method thereof
#2672WARP-FREE SEMICONDUCTOR WAFER, AND DEVICES USING THE SAME
#2673Device and method for manipulating direction of motion of current carriers
#2674Low resistance tunnel junctions in wide band gap materials and method of making same
#2675Field effect transistor with suitable source, drain and channel materials and integrated circuit comprising same
#2676Semiconductor nanocrystal heterostructures
#2677Extreme high mobility CMOS logic
#2678Group-III nitride semiconductor device
#2679Superlattice strain relief layer for semiconductor devices
#2680Method and apparatus for producing large, single-crystals of aluminum nitride
#2681Nitride semiconductor device
#2682Fabrication of single or multiple gate field plates
#2683Semiconductor electronic device
#2684High-frequency device including high-frequency switching circuit
#2685Devices incorporating heavily defected semiconductor layers
#2686Semiconductor device and method for fabricating the same
#2687Hetero-junction bipolar transistor and manufacturing method thereof
#2688Quantum well structure
#2689Devices incorporating heavily defected semiconductor layers
#2690Aluminum free group III-nitride based high electron mobility transistors
#2691Heterojunction bipolar transistor
#2692Group-III nitride semiconductor stack, method of manufacturing the same, and group-III nitride semiconductor device
#2693Semiconductor device and method for manufacturing the same
#2694Compound semiconductor epitaxial substrate and manufacturing method thereof
#2695Creation of anisotropic strain in semiconductor quantum well
#2696GaN-based semiconductor junction structure
#2697Heterobipolar transistor
#2698Bipolar transistor and a method of fabricating said transistor
#2699Boron phosphide-based compound semiconductor device, production method thereof and light emitting diode
#2700InAlAsSb/InGaSb and InAlPSb/InGaSb heterojunction bipolar transistors