Robert Strittmatter

GaN HEMT WITH REDUCED THRESHOLD SHIFTING

GaN HEMT WITH LOW THRESHOLD VOLTAGE SHIFT USING A HOLE INJECTOR/COLLECTOR

GaN DEVICE WITH HOLE ELIMINATION CENTERS

GaN TRANSISTOR HAVING MULTI-THICKNESS FRONT BARRIER

GaN DEVICE WITH HOLE ELIMINATION CENTERS

GaN DEVICE WITH UNIFORM ELECTRIC FIELD

Multi-step surface passivation structures and methods for fabricating same

GaN transistors with polysilicon layers used for creating additional components

Integrated circuit with matching threshold voltages and method for making same

GaN transistors with polysilicon layers used for creating additional components

Flip chip interconnection with reduced current density

Integrated circuit with matching threshold voltages and method for making same

GaN device with reduced output capacitance and process for making same

GaN transistors with polysilicon layers for creating additional components

Method to fabricate self-aligned isolation in gallium nitride devices and integrated circuits

Isolation structure in gallium nitride devices and integrated circuits