Mascalucia
Italy
20
2026-04-02
The entities that hold a legal rights for patent applications filed by inventor Roccaforte Fabrizio:
Fabrizio Roccaforte from Mascalucia, IT has applied for patents for these inventions. The list has both pending applications and granted patents:
HEMT DEVICE HAVING LOW CONDUCTION LOSSES AND MANUFACTURING PROCESS THEREOF
#2 | 2025-12-25CONTEXTUAL FORMATION OF A JUNCTION BARRIER DIODE AND A SCHOTTKY DIODE IN A MPS DEVICE BASED ON SILICON CARBIDE, AND MPS DEVICE
#3 | 2025-08-28METHOD FOR REGULATING THE SCHOTTKY BARRIER HEIGHT IN A SILICON CARBIDE POWER DIODE, AND POWER DIODE
#4 | 2025-01-09SILICON CARBIDE-BASED ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME
#5 | 2024-03-07SIC-BASED ELECTRONIC DEVICE WITH IMPROVED GATE DIELECTRIC AND MANUFACTURING METHOD THEREOF, DIODE
#6 | 2023-09-21FORMING AN ELECTRONIC DEVICE, SUCH AS A JBS OR MPS DIODE, BASED ON 3C-SIC, AND 3C-SIC ELECTRONIC DEVICE
#7 | 2023-09-21FORMING AN ELECTRONIC DEVICE, SUCH AS A JBS OR MPS DIODE, BASED ON 3C-SIC, AND 3C-SIC ELECTRONIC DEVICE
#8 | 2023-08-17HEMT DEVICE HAVING LOW CONDUCTION LOSSES AND MANUFACTURING PROCESS THEREOF
#9 | 2023-08-03ENHANCEMENT-MODE HEMT AND MANUFACTURING PROCESS OF THE SAME
#10 | 2023-08-03MANUFACTURING PROCESS OF AN OHMIC CONTACT OF A HEMT DEVICE AND HEMT DEVICE
#11 | 2023-08-03WIDE BAND GAP TRANSISTOR WITH NANOLAMINATED INSULATING GATE STRUCTURE AND PROCESS FOR MANUFACTURING A WIDE BAND GAP TRANSISTOR
#12 | 2023-03-23CONTEXTUAL FORMATION OF A JUNCTION BARRIER DIODE AND A SCHOTTKY DIODE IN A MPS DEVICE BASED ON SILICON CARBIDE, AND MPS DEVICE
#13 | 2022-06-30Silicon carbide-based electronic device and method of manufacturing the same
#14 | 2022-06-30SILICON CARBIDE MOSFET TRANSISTOR DEVICE WITH IMPROVED CHARACTERISTICS AND CORRESPONDING MANUFACTURING PROCESS
#15 | 2021-09-02Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereof
#16 | 2020-11-26Silicon carbide-based electronic device and method of manufacturing the same
#17 | 2020-05-14Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereof
#18 | 2018-12-13Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereof
#19 | 2015-12-24Wide bandgap high-density semiconductor switching device and manufacturing process thereof
#20 | 2006-08-17Process for manufacturing a schottky contact on a semiconductor substrate
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