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Inventor profile of:

Alessandro Chini

City:

Modena

Country:

Italy

Published Applications:

Last publication date:

2026-06-04

Top Assignees for applications by Alessandro Chini

The entities that hold a legal rights for patent applications filed by inventor Chini Alessandro:

STMICROELECTRONICS S.R.L. 13 Agrate Brianza, Italy
STMicroelectronics International N.V. 4 Geneva, Switzerland
The Regents of the University of California 3 Oakland, CA United States
Cree, Inc. 2 Durham, NC United States

Recent patent applications by Chini Alessandro

Alessandro Chini from Modena, IT has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-06-04

US20260156902A1

Electricity

NORMALLY-OFF HEMT DEVICE WITH BIPOLAR OHMIC CONTACTS, AND MANUFACTURING METHOD THEREOF

#2 | 2025-11-27

US20250366136A1

Electricity

NORMALLY-OFF HEMT DEVICE WITH IMPROVED DYNAMIC PERFORMANCES, AND MANUFACTURING METHOD THEREOF

#3 | 2025-09-04

US20250280553A1

Electricity

HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAINING A GATE REGION AND FORMING AT LEAST ONE STEP, AND CORRESPONDING MANUFACTURING METHOD

#4 | 2025-01-30

US20250040173A1

Electricity

DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF

#5 | 2024-10-03

US20240332413A1

Electricity

HEMT DEVICE HAVING AN IMPROVED GATE STRUCTURE AND MANUFACTURING PROCESS THEREOF

#6 | 2024-09-19

US20240313102A1

Electricity

NORMALLY-OFF HETEROJUNCTION INTEGRATED DEVICE AND METHOD FOR MANUFACTURING AN INTEGRATED DEVICE

#7 | 2024-05-30

US20240178301A1

Electricity

HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAINING A GATE REGION AND FORMING AT LEAST ONE STEP, AND CORRESPONDING MANUFACTURING METHOD

#8 | 2023-09-07

US20230282727A1

Electricity

HEMT DEVICE AND MANUFACTURING PROCESS THEREOF

#9 | 2023-02-16

US20230047815A1

Electricity

Double-channel HEMT device and manufacturing method thereof

#10 | 2021-11-25

US20210367062A1

Electricity

HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method

#11 | 2021-06-10

US20210175350A1

Electricity

HEMT transistor including field plate regions and manufacturing process thereof

#12 | 2021-03-25

US20210091218A1

Electricity

Double-channel HEMT device and manufacturing method thereof

#13 | 2020-03-19

US20200091313A1

Electricity

HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method

#14 | 2019-09-19

US20190288100A1

Electricity

Double-channel HEMT device and manufacturing method thereof

#15 | 2018-12-13

US20180358456A1

Electricity

HEMT transistor with high stress resilience during off state and manufacturing method thereof

#16 | 2017-11-30

US20170345922A1

Electricity

Double-channel HEMT device and manufacturing method thereof

#17 | 2017-05-18

US20170141208A1

Electricity

HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method

#18 | 2017-01-26

US20170025506A1

Electricity

Fabrication of single or multiple gate field plates

#19 | 2011-01-27

US20110018062A1

Electricity

Fabrication of single or multiple gate field plates

#20 | 2007-03-15

US20070059873A1

Electricity

Fabrication of single or multiple gate field plates

InventorID:

1781854 ⎘