Inventor profile of:

Peter B. Gray

City:

Jericho, Vermont

Country:

United States

Published Applications:

15

Last publication date:

2019-06-13

Top Assignees for applications by Peter B. Gray

The entities that hold a legal rights for patent applications filed by inventor Gray Peter B.:

Recent patent applications by Gray Peter B.

Peter B. Gray from Jericho, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2019-06-13
US20190181250A1
Electricity

COMPACT DEVICE STRUCTURES FOR A BIPOLAR JUNCTION TRANSISTOR

#2 | 2017-09-28
US20170278955A1
Electricity

Compact device structures for a bipolar junction transistor

#3 | 2015-07-30
US20150214344A1
Electricity

Bipolar junction transistors with self-aligned terminals

#4 | 2015-05-07
US20150123245A1
Electricity

Bipolar junction transistors with self-aligned terminals

#5 | 2015-02-12
US20150041956A1
Electricity

Isolation scheme for bipolar transistors in BiCMOS technology

#6 | 2014-09-04
US20140246676A1
Electricity

Bipolar device having a monocrystalline semiconductor intrinsic base to extrinsic base link-up region

#7 | 2014-05-01
US20140117493A1
Electricity

Isolation scheme for bipolar transistors in BiCMOS technology

#8 | 2013-06-13
US20130147017A1
Electricity

Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases

#9 | 2013-06-06
US20130140566A1
Electricity

Bipolar junction transistor with a self-aligned emitter and base

#10 | 2013-03-14
US20130062668A1
Electricity

Heterojunction bipolar transistors with reduced base resistance

#11 | 2013-01-10
US20130009280A1
Electricity

Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases

#12 | 2012-09-13
US20120228611A1
Electricity

Methods of fabricating a bipolar junction transistor with a self-aligned emitter and base

#13 | 2012-05-24
US20120126292A1
Electricity

Heterojunction bipolar transistors with reduced base resistance

#14 | 2011-12-22
US20110309471A1
Electricity

Transistor structure with a sidewall-defined intrinsic base to extrinsic base link-up region and method of forming the structure

#15 | 2010-12-23
US20100320571A1
Electricity

Bipolar transistor structure and method including emitter-base interface impurity

InventorID:

22408 ⎘