Inventor profile of:

Thomas Andre

City:

Austin, Texas

Country:

United States

Published Applications:

94

Last publication date:

2023-09-28

Top Assignees for applications by Thomas Andre

The entities that hold a legal rights for patent applications filed by inventor Andre Thomas:

Recent patent applications by Andre Thomas

Thomas Andre from Austin, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2023-09-28
US20230309416A1
Electricity

Magnetoresistive stack/structure and methods therefor

#2 | 2023-03-30
US20230100514A1
Electricity

Methods of forming magnetoresistive devices and integrated circuits

#3 | 2021-04-22
US20210118948A1
Electricity

Methods of forming magnetoresistive devices and integrated circuits

#4 | 2020-09-10
US20200286950A1
Electricity

Methods of forming magnetoresistive devices and integrated circuits

#5 | 2020-07-23
US20200235289A1
Electricity

Shared spin-orbit-torque write line in a spin-orbit-torque MRAM

#6 | 2020-07-23
US20200235288A1
Electricity

In-plane spin orbit torque magnetoresistive stack/structure and methods therefor

#7 | 2019-10-15
US15980977
Physics

Bitline control in differential magnetic memory

#8 | 2019-07-18
US20190221247A1
Physics

Circuit for wordline autobooting in memory and method therefor

#9 | 2019-07-18
US20190221242A1
Physics

Feed forward bias system for MTJ voltage control

#10 | 2019-06-27
US20190199375A1
Electricity

ECC word configuration for system-level ECC compatibility

#11 | 2019-05-28
US15959669
Physics

Dual-edge trigger asynchronous clock generation and related methods

#12 | 2019-05-23
US20190156878A1
Physics

WRITE VERIFY PROGRAMMING OF A MEMORY DEVICE

#13 | 2019-05-16
US20190147971A1
Physics

Short detection and inversion

#14 | 2019-03-21
US20190088306A1
Physics

BURST LENGTH DEFINED PAGE SIZE AND RELATED METHODS

#15 | 2019-03-21
US20190087250A1
Physics

METHODS AND DEVICES FOR HEALING RESET ERRORS IN A MAGNETIC MEMORY

#16 | 2019-02-07
US20190043921A1
Electricity

Magnetoresistive device design and process integration with surrounding circuitry

#17 | 2018-10-16
US15650203
Electricity

Magnetoresistive device design and process integration with surrounding circuitry

#18 | 2018-09-20
US20180267899A1
Physics

Delayed write-back in memory

#19 | 2018-05-03
US20180122495A1
Physics

Short detection and inversion

#20 | 2018-03-06
US15445898
Physics

Selection circuit with autobooting for magnetic memory and methods therefor

#21 | 2017-11-23
US20170337959A1
Physics

Nonvolatile logic and security circuits

#22 | 2017-11-02
US20170315920A1
Physics

Delayed write-back in memory

#23 | 2017-10-19
US20170301384A1
Physics

Self-referenced read with offset current in a memory

#24 | 2017-09-14
US20170263300A1
Physics

Write verify programming of a memory device

#25 | 2017-07-18
US15230402
Electricity

Magnetoresistive device design and process integration with surrounding circuitry

#26 | 2017-06-22
US20170178709A1
Physics

Word line auto-booting in a spin-torque magnetic memery having local source lines

#27 | 2017-04-13
US20170104498A1
Electricity

ECC word configuration for system-level ECC compatibility

#28 | 2017-03-30
US20170092347A1
Physics

Circuit and method for controlling MRAM cell bias voltages

#29 | 2017-03-23
US20170084324A1
Physics

Memory system with timing overlap mode for activate and precharge operations

#30 | 2017-03-23
US20170084323A1
Physics

Non-destructive write/read leveling

#31 | 2017-03-09
US20170069397A1
Physics

Short detection and inversion

#32 | 2017-03-02
US20170060691A1
Physics

Memory device with page emulation mode

#33 | 2017-02-21
US14049543
Physics

Memory device with reduced test time

#34 | 2017-01-24
US14872438
Physics

Memory device with sampled resistance controlled write voltages

#35 | 2016-12-01
US20160350031A1
Physics

Memory controller and method for interleaving DRAM and MRAM accesses

#36 | 2016-10-20
US20160307615A1
Physics

Self-referenced read with offset current in a memory

#37 | 2016-10-18
US14872678
Physics

Magnetic memory having two transistors and two magnetic tunnel junctions per memory cell

#38 | 2016-09-22
US20160276013A1
Physics

Method for writing to a magnetic tunnel junction device

#39 | 2016-09-22
US20160276012A1
Physics

Method of writing to a spin torque magnetic random access memory

#40 | 2016-09-01
US20160254041A1
Physics

Nonvolatile logic and security circuits

#41 | 2016-09-01
US20160254040A1
Physics

Boosted supply voltage generator and method therefore

#42 | 2016-08-09
US14872708
Electricity

Magnetoresistive device design and process integration with surrounding circuitry

#43 | 2016-06-23
US20160180910A1
Physics

Word line auto-booting in a spin-torque magnetic memory having local source lines

#44 | 2016-06-16
US20160172019A1
Physics

Boosted supply voltage generator for a memory device and method therefore

#45 | 2016-06-09
US20160163371A1
Physics

Non-destructive write/read leveling

#46 | 2016-04-14
US20160104518A1
Physics

Memory device with timing overlap mode and precharge timing circuit

#47 | 2016-04-12
US14052223
Physics

Word line supply voltage generator for a memory device and method therefore

#48 | 2016-04-07
US20160099040A1
Physics

Self-referenced sense amplifier for spin-torque MRAM

#49 | 2016-04-07
US20160099039A1
Physics

Method of writing to a spin torque magnetic random access memory

#50 | 2016-03-31
US20160093354A1
Physics

Short detection and inversion

#51 | 2016-03-31
US20160093349A1
Physics

Write verify programming of a memory device

#52 | 2016-03-31
US20160093341A1
Physics

Memory device with shared amplifier circuitry

#53 | 2016-03-31
US20160092305A1
Physics

ECC word configuration for system-level ECC compatibility

#54 | 2016-03-24
US20160085622A1
Physics

Expanded error correction codes

#55 | 2016-03-10
US20160070935A1
Physics

Response to tamper detection in a memory device

#56 | 2016-02-11
US20160042781A1
Physics

Circuit and method for accessing a bit cell in a spin-torque MRAM

#57 | 2016-02-11
US20160042780A1
Physics

Circuit and method for controlling MRAM cell bias voltages

#58 | 2016-01-28
US20160027489A1
Physics

Hybrid read scheme for spin torque MRAM

#59 | 2016-01-21
US20160019139A1
Physics

Memory controller and method for interleaving DRAM and MRAM accesses

#60 | 2016-01-05
US14638222
Physics

Word line driver circuit

#61 | 2015-12-10
US20150356322A1
Physics

Tamper detection and response in a memory device

#62 | 2015-12-10
US20150355967A1
Physics

Method of reading and writing to a spin torque magnetic random access memory with error correcting code

#63 | 2015-09-17
US20150262662A1
Physics

Nonvolatile logic and security circuits

#64 | 2015-09-10
US20150255137A1
Physics

Word line auto-booting in a spin-torque magnetic memory having local source lines

#65 | 2015-09-10
US20150255133A1
Physics

Assisted local source line

#66 | 2015-09-10
US20150254181A1
Physics

Burst length defined page size

#67 | 2015-08-27
US20150243337A1
Physics

Method of writing to a spin torque magnetic random access memory

#68 | 2015-07-23
US20150206570A1
Physics

Circuit and method for spin-torque MRAM bit line and source line voltage regulation

#69 | 2015-07-16
US20150200001A1
Physics

Memory device with reduced on-chip noise

#70 | 2015-05-07
US20150124524A1
Physics

Memory device with timing overlap mode

#71 | 2015-04-23
US20150109854A1
Physics

Method for writing to a magnetic tunnel junction device

#72 | 2015-04-14
US14051762
Physics

Word line driver circuit

#73 | 2015-02-26
US20150055406A1
Physics

Non-destructive write/read leveling

#74 | 2015-01-29
US20150029786A1
Physics

Self-referenced sense amplifier for spin torque MRAM

#75 | 2015-01-15
US20150019806A1
Physics

Memory device with page emulation mode

#76 | 2015-01-01
US20150006997A1
Physics

Method of writing to a spin torque magnetic random access memory

#77 | 2014-12-18
US20140372792A1
Physics

Methods and devices for healing reset errors in a magnetic memory

#78 | 2014-08-14
US20140230079A1
Physics

Response to tamper detection in a memory device

#79 | 2014-08-14
US20140226396A1
Physics

Tamper detection and response in a memory device

#80 | 2014-04-17
US20140104963A1
Physics

Memory device with reduced on-chip noise

#81 | 2014-04-17
US20140104937A1
Physics

Memory device with timing overlap mode

#82 | 2013-11-21
US20130308374A1
Physics

Circuit and method for controlling MRAM cell bias voltages

#83 | 2013-10-17
US20130272060A1
Physics

Self-referenced sense amplifier for spin torque MRAM

#84 | 2013-06-20
US20130155763A1
Physics

Circuit and method for spin-torque MRAM bit line and source line voltage regulation

#85 | 2013-05-23
US20130128658A1
Physics

Write driver circuit and method for writing to a spin-torque MRAM

#86 | 2013-05-23
US20130128657A1
Physics

Hybrid read scheme for spin torque MRAM

#87 | 2013-05-23
US20130128650A1
Physics

Data-masked analog and digital read for resistive memories

#88 | 2012-12-06
US20120311396A1
Physics

MRAM field disturb detection and recovery

#89 | 2012-08-02
US20120198313A1
Physics

Method of reading and writing to a spin torque magnetic random access memory with error correcting code

#90 | 2012-08-02
US20120195112A1
Physics

Method of writing to a spin torque magnetic random access memory

#91 | 2012-06-28
US20120163061A1
Physics

Memory array having local source lines

#92 | 2012-06-21
US20120155160A1
Physics

Memory controller and method for interleaving DRAM and MRAM accesses

#93 | 2011-12-01
US20110292714A1
Physics

Structures and methods for a field-reset spin-torque MRAM

#94 | 2009-11-26
US20090290443A1
Physics

Memory circuit with sense amplifier

InventorID:

258921 ⎘