Nürnberg
Germany
23
2026-06-04
The entities that hold a legal rights for patent applications filed by inventor ECKER Bernhard:
Bernhard ECKER from Nürnberg, DE has applied for patents for these inventions. The list has both pending applications and granted patents:
Seed Crystal Assembly and Method of Growing SiC Single Crystal Boules
#2 | 2025-10-09Layered Substrate, Method of Fabrication of a Layered Substrate and Method for Growing an Epitaxial Layer with the Layered Substrate
#3 | 2025-10-09Multilayer Seed for Single-Crystal Growth, Method of Producing a Multilayer Seed, Use of the Multilayer Seed in a PVT Process for Growing a Single-Crystal and PVT Process Using the Same
#4 | 2025-10-09Layered Seed, Method of Fabrication of a Layered Seed and Method for Growing a Volume Mono Crystal with the Layered Seed
#5 | 2025-09-11SEED UNIT AND APPARATUS FOR GROWING A BULK SIC SINGLE CRYSTAL
#6 | 2025-09-11PRODUCTION METHOD FOR A BULK SIC SINGLE CRYSTAL
#7 | 2025-06-19ARRANGEMENT FOR GROWING A SIC VOLUME MONOCRYSTAL AND GROWING METHOD
#8 | 2025-06-19CRUCIBLE FOR PRODUCING A SIC VOLUME MONO CRYSTAL AND A METHOD FOR GROWING A SIC VOLUME MONO CRYSTAL
#9 | 2024-11-28Method for Producing a Bulk SiC Single Crystal with Improved Quality Using a SiC Seed Crystal with a Temporary Protective Oxide Layer, and SiC Seed Crystal with Protective Oxide Layer
#10 | 2024-09-26METHOD AND APPARATUS FOR THE THERMAL POST-TREATMENT OF AT LEAST ONE SIC VOLUME MONOCRYSTAL
#11 | 2024-09-19Sublimation System And Method Of Growing At Least One Single Crystal
#12 | 2024-09-19Sublimation System and Method of Growing at Least One Single Crystal of a Semiconductor Material
#13 | 2024-08-08SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTAL, AND METHOD OF MANUFACTURING SAME
#14 | 2024-08-08SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTAL, AND METHOD OF MANUFACTURING SAME
#15 | 2024-01-04PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF INHOMOGENEOUS SCREW DISLOCATION DISTRIBUTION AND SIC SUBSTRATE
#16 | 2023-12-28PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF HOMOGENEOUS SCREW DISLOCATION DISTRIBUTION AND SIC SUBSTRATE
#17 | 2023-06-22SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL BOULES
#18 | 2023-03-16CHAMFERED SILICON CARBIDE SUBSTRATE AND METHOD OF CHAMFERING
#19 | 2022-03-24Silicon carbide substrate and method of growing SiC single crystal boules
#20 | 2021-05-20Silicon carbide substrate and method of growing SiC single crystal boules
#21 | 2020-03-05Silicon carbide substrate and method of growing SiC single crystal boules
#22 | 2019-11-14Chamfered silicon carbide substrate and method of chamfering
#23 | 2019-11-14Chamfered silicon carbide substrate and method of chamfering
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