Inventor profile of:

David Eaglesham

City:

Livermore, California

Country:

United States

Published Applications:

16

Last publication date:

2011-03-24

Top Assignees for applications by David Eaglesham

The entities that hold a legal rights for patent applications filed by inventor Eaglesham David:

Recent patent applications by Eaglesham David

David Eaglesham from Livermore, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2011-03-24
US20110070721A1
Chemistry; metallurgy

EPITAXIAL GROWTH OF COMPOUND NITRIDE SEMICONDUCTOR STRUCTURES

#2 | 2011-02-10
US20110031113A1
Electricity

ELECTROPLATING APPARATUS

#3 | 2008-06-05
US20080132082A1
Electricity

Precision printing electroplating through plating mask on a solar cell substrate

#4 | 2008-06-05
US20080128268A1
Chemistry; metallurgy

High-aspect ratio anode and apparatus for high-speed electroplating on a solar cell substrate

#5 | 2008-06-05
US20080128019A1
Electricity

METHOD OF METALLIZING A SOLAR CELL SUBSTRATE

#6 | 2008-06-05
US20080128013A1
Chemistry; metallurgy

Electroplating on roll-to-roll flexible solar cell substrates

#7 | 2008-05-29
US20080121276A1
Electricity

SELECTIVE ELECTROLESS DEPOSITION FOR SOLAR CELLS

#8 | 2008-04-24
US20080092947A1
Electricity

PULSE PLATING OF A LOW STRESS FILM ON A SOLAR CELL SUBSTRATE

#9 | 2007-11-08
US20070259502A1
Chemistry; metallurgy

Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE

#10 | 2007-11-01
US20070254100A1
Chemistry; metallurgy

MOCVD reactor without metalorganic-source temperature control

#11 | 2007-11-01
US20070254093A1
Chemistry; metallurgy

MOCVD reactor with concentration-monitor feedback

#12 | 2007-10-18
US20070243702A1
Electricity

Dual-side epitaxy processes for production of nitride semiconductor structures

#13 | 2007-10-18
US20070243652A1
Chemistry; metallurgy

Stacked-substrate processes for production of nitride semiconductor structures

#14 | 2007-10-18
US20070241351A1
Electricity

Double-sided nitride structures

#15 | 2007-10-18
US20070240631A1
Chemistry; metallurgy

Epitaxial growth of compound nitride semiconductor structures

#16 | 2007-10-04
US20070232057A1
Electricity

Method for forming thin film photovoltaic interconnects using self-aligned process

InventorID:

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