Inventor profile of:

Robert Beach

City:

Altadena, California

Country:

United States

Published Applications:

48

Last publication date:

2014-02-06

Top Assignees for applications by Robert Beach

The entities that hold a legal rights for patent applications filed by inventor Beach Robert:

Recent patent applications by Beach Robert

Robert Beach from Altadena, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2014-02-06
US20140038391A1
Electricity

III-nitride wafer fabrication

#2 | 2014-01-30
US20140030858A1
Electricity

Enhancement Mode III-Nitride Device

#3 | 2013-10-10
US20130264579A1
Electricity

III-nitride heterojunction device

#4 | 2013-10-03
US20130256695A1
Electricity

III-nitride heterojunction device

#5 | 2013-09-26
US20130248884A1
Electricity

III-nitride power device

#6 | 2013-09-19
US20130240911A1
Electricity

III-nitride multi-channel heterojunction device

#7 | 2011-11-10
US20110275183A1
Electricity

Enhancement mode III-nitride FET

#8 | 2011-10-06
US20110244671A1
Electricity

Method for fabricating a III-nitride semiconductor device

#9 | 2011-10-06
US20110241019A1
Electricity

III-nitride power semiconductor device

#10 | 2011-06-16
US20110143517A1
Electricity

III-nitride monolithic IC

#11 | 2010-01-14
US20100006895A1
Electricity

III-NITRIDE SEMICONDUCTOR DEVICE

#12 | 2009-03-12
US20090065785A1
Electricity

III-nitride power semiconductor device

#13 | 2009-01-01
US20090001424A1
Electricity

III-nitride power device

#14 | 2008-12-04
US20080296621A1
Electricity

III-nitride heterojunction device

#15 | 2008-11-06
US20080274621A1
Electricity

III-nitride semiconductor device with trench structure

#16 | 2008-10-09
US20080248634A1
Electricity

Enhancement mode III-nitride FET

#17 | 2008-08-07
US20080185613A1
Electricity

III-nitride semiconductor device

#18 | 2008-05-01
US20080102598A1
Electricity

III-nitride wafer fabrication

#19 | 2008-03-06
US20080054303A1
Electricity

III-nitride device with reduced piezoelectric polarization

#20 | 2007-12-27
US20070298556A1
Electricity

Field effect transistor with enhanced insulator structure

#21 | 2007-12-20
US20070293015A1
Electricity

III-nitride device and method with variable epitaxial growth direction

#22 | 2007-08-02
US20070176201A1
Electricity

Integrated III-nitride devices

#23 | 2007-07-19
US20070164314A1
Electricity

Nitrogen polar III-nitride heterojunction JFET

#24 | 2007-04-26
US20070090373A1
Electricity

III-nitride device with improved layout geometry

#25 | 2007-04-05
US20070077745A1
Electricity

III-nitride semiconductor fabrication

#26 | 2007-04-05
US20070077714A1
Electricity

Method for fabricating a semiconductor device

#27 | 2007-04-05
US20070077689A1
Electricity

Complimentary lateral III-nitride transistors

#28 | 2007-03-22
US20070066020A1
Electricity

Method of forming a III-nitride selective current carrying device including a contact in a recess

#29 | 2007-03-15
US20070056506A1
Electricity

Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path

#30 | 2007-01-11
US20070007547A1
Electricity

III-nitride enhancement mode devices

#31 | 2007-01-04
US20070000433A1
Chemistry; metallurgy

III-nitride semiconductor device fabrication

#32 | 2006-12-14
US20060281279A1
Electricity

Structure and method for III-nitride monolithic power IC

#33 | 2006-07-06
US20060145189A1
Electricity

III-nitride power semiconductor with a field relaxation feature

#34 | 2006-04-20
US20060081985A1
Electricity

III-nitride power semiconductor device with a current sense electrode

#35 | 2006-03-30
US20060065912A1
Electricity

Non-planar III-nitride power device having a lateral conduction path

#36 | 2006-03-30
US20060065908A1
Electricity

III-nitride multi-channel heterojunction interdigitated rectifier

#37 | 2006-03-23
US20060060871A1
Electricity

Enhancement mode III-nitride FET

#38 | 2006-01-12
US20060006413A1
Electricity

III-nitride device passivation and method

#39 | 2005-09-08
US20050194612A1
Electricity

III-nitride current control device and method of manufacture

#40 | 2005-09-01
US20050191821A1
Electricity

III-nitride device and method with variable epitaxial growth direction

#41 | 2005-09-01
US20050189562A1
Electricity

Integrated III-nitride power devices

#42 | 2005-09-01
US20050189561A1
Electricity

III-nitride bidirectional switch

#43 | 2005-08-18
US20050180231A1
Electricity

Complimentary lateral nitride transistors

#44 | 2005-08-18
US20050179096A1
Electricity

Complimentary nitride transistors vertical and common drain

#45 | 2005-07-07
US20050145883A1
Electricity

III-nitride semiconductor device with trench structure

#46 | 2005-06-30
US20050139891A1
Electricity

III-nitride device with improved layout geometry

#47 | 2005-06-09
US20050121729A1
Electricity

Structure and method for III-nitride monolithic power IC

#48 | 2005-06-09
US20050121661A1
Electricity

Field effect transistor with enhanced insulator structure

InventorID:

439902 ⎘