Inventor profile of:

James W. Adkisson

City:

Jericho, Vermont

Country:

United States

Published Applications:

142

Last publication date:

2019-10-24

Top Assignees for applications by James W. Adkisson

The entities that hold a legal rights for patent applications filed by inventor Adkisson James W.:

Recent patent applications by Adkisson James W.

James W. Adkisson from Jericho, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2019-10-24
US20190326411A1
Electricity

Heterojunction bipolar transistors with an inverted crystalline boundary in the base layer

#2 | 2019-06-04
US16013363
Electricity

Heterojunction bipolar transistors with multiple emitter fingers and undercut extrinsic base regions

#3 | 2019-02-26
US15948486
Electricity

Heterojunction bipolar transistors with a controlled undercut formed beneath the extrinsic base

#4 | 2018-09-06
US20180254761A1
Electricity

Switchable filters and design structures

#5 | 2018-05-03
US20180122689A1
Electricity

Contact module for optimizing emitter and contact resistance

#6 | 2018-04-12
US20180102289A1
Electricity

Methods of tuning current ratio in a current mirror for transistors formed with the same FEOL layout and a modified BEOL layout

#7 | 2017-12-21
US20170366154A1
Electricity

Switchable filters and design structures

#8 | 2017-12-21
US20170366153A1
Electricity

Switchable filters and design structures

#9 | 2017-12-21
US20170365775A1
Electricity

Backside integration of RF filters for RF front end modules and design structure

#10 | 2017-04-06
US20170098699A1
Electricity

Implementing stress in a bipolar junction transistor

#11 | 2016-08-23
US14747604
Electricity

Replacement emitter for reduced contact resistance

#12 | 2016-08-04
US20160225917A1
Electricity

FIELD EFFECT TRANSISTOR (FET) WITH SELF-ALIGNED DOUBLE GATES ON BULK SILICON SUBSTRATE, METHODS OF FORMING, AND RELATED DESIGN STRUCTURES

#13 | 2016-06-30
US20160190292A1
Electricity

BIPOLAR TRANSISTOR WITH EXTRINSIC BASE REGION AND METHODS OF FABRICATION

#14 | 2016-06-02
US20160155661A1
Electricity

Contact module for optimizing emitter and contact resistance

#15 | 2016-03-10
US20160072469A1
Electricity

Switchable filters and design structures

#16 | 2015-12-24
US20150372660A1
Electricity

Switchable filters and design structures

#17 | 2015-12-10
US20150357447A1
Electricity

Bipolar transistor with extrinsic base region and methods of fabrication

#18 | 2015-12-03
US20150348876A1
Electricity

Tsv wafer with improved fracture strength

#19 | 2015-11-05
US20150318839A1
Electricity

Switchable filters and design structures

#20 | 2015-10-29
US20150311283A1
Electricity

Bipolar junction transistors with reduced base-collector junction capacitance

#21 | 2015-09-10
US20150255404A1
Electricity

Methods of forming a TSV wafer with improved fracture strength

#22 | 2015-08-27
US20150244345A1
Electricity

Tunable filter structures and design structures

#23 | 2015-08-27
US20150243879A1
Electricity

Backside integration of RF filters for RF front end modules and design structure

#24 | 2015-07-23
US20150206961A1
Electricity

Field effect transistor (FET) with self-aligned double gates on bulk silicon substrate, methods of forming, and related design structures

#25 | 2015-02-12
US20150042418A1
Electricity

Switchable filters and design structures

#26 | 2015-02-12
US20150041904A1
Electricity

Blanket short channel roll-up implant with non-angled long channel compensating implant through patterned opening

#27 | 2015-01-29
US20150028449A1
Electricity

NANOPARTICLES FOR MAKING SUPERCAPACITOR AND DIODE STRUCTURES

#28 | 2015-01-15
US20150014747A1
Electricity

Method to bridge extrinsic and intrinsic base by selective epitaxy in BiCMOS technology

#29 | 2014-12-04
US20140353725A1
Electricity

Semiconductor device and method of forming the device by forming monocrystalline semiconductor layers on a dielectric layer over isolation regions

#30 | 2014-11-20
US20140340548A1
Electricity

Pixel sensor cell with hold node for leakage cancellation and methods of manufacture and design structure

#31 | 2014-08-21
US20140231878A1
Electricity

COLLECTOR-UP BIPOLAR JUNCTION TRANSISTORS IN BICMOS TECHNOLOGY

#32 | 2014-08-21
US20140231877A1
Electricity

Collector-up bipolar junction transistors in BiCMOS technology

#33 | 2014-06-05
US20140151852A1
Electricity

Bipolar junction transistors with reduced base-collector junction capacitance

#34 | 2014-05-15
US20140131661A1
Electricity

Graphene field effect transistor

#35 | 2014-03-27
US20140084420A1
Electricity

Method to bridge extrinsic and intrinsic base by selective epitaxy in BiCMOS technology

#36 | 2013-08-22
US20130214877A1
Electricity

Method of manufacturing switchable filters

#37 | 2013-08-22
US20130214275A1
Electricity

Transistor having a monocrystalline center section and a polycrystalline outer section, and narrow in-substrate collector region for reduced base-collector junction capacitance

#38 | 2013-07-25
US20130187729A1
Electricity

Method of manufacturing switching filters and design structures

#39 | 2013-07-25
US20130187246A1
Electricity

Backside integration of RF filters for RF front end modules and design structure

#40 | 2013-07-04
US20130169383A1
Electricity

Method of manufacturing switchable filters

#41 | 2013-06-27
US20130161777A1
Electricity

Anti-reflection structures for CMOS image sensors

#42 | 2013-06-27
US20130161283A1
Electricity

SAW FILTER HAVING PLANAR BARRIER LAYER AND METHOD OF MAKING

#43 | 2013-06-20
US20130154003A1
Electricity

ASYMMETRIC ANTI-HALO FIELD EFFECT TRANSISTOR

#44 | 2013-06-13
US20130147319A1
Electricity

Method of manufacturing a film bulk acoustic resonator with a loading element

#45 | 2013-06-13
US20130146847A1
Electricity

Graphene field effect transistor

#46 | 2013-06-13
US20130146846A1
Electricity

Graphene field effect transistor

#47 | 2013-05-30
US20130134483A1
Electricity

Bipolar transistor with a raised collector pedestal for reduced capacitance

#48 | 2013-05-16
US20130119434A1
Electricity

Bipolar transistor with a collector having a protected outer edge portion for reduced based-collector junction capacitance and a method of forming the transistor

#49 | 2013-05-09
US20130113577A1
Electricity

Tunable filter structures and design structures

#50 | 2013-05-09
US20130113050A1
Electricity

Blanket short channel roll-up implant with non-angled long channel compensating implant through patterned opening

#51 | 2013-03-21
US20130069199A1
Electricity

Metal insulator metal (MIM) capacitor structure

#52 | 2013-01-31
US20130026646A1
Electricity

Passivated through wafer vias in low-doped semiconductor substrates

#53 | 2012-07-05
US20120168835A1
Electricity

Anti-reflection structures for CMOS image sensors

#54 | 2012-05-17
US20120122261A1
Electricity

CMOS imager photodiode with enhanced capacitance

#55 | 2012-05-01
US12987402
-

Self-dicing chips using through silicon vias

#56 | 2012-04-26
US20120098105A1
Electricity

Bond pad for wafer and package for CMOS imager

#57 | 2012-04-05
US20120081588A1
Electricity

Pixel sensor cell with hold node for leakage cancellation and methods of manufacture and design structure

#58 | 2012-02-16
US20120037967A1
Electricity

CMOS pixel sensor cells with poly spacer transfer gates and methods of manufacture

#59 | 2012-01-05
US20120001268A1
Electricity

ISOLATION WITH OFFSET DEEP WELL IMPLANTS

#60 | 2011-10-13
US20110250715A1
Electricity

Methods for forming anti-reflection structures for CMOS image sensors

#61 | 2011-08-11
US20110193146A1
Electricity

Charge Carrier Barrier for Image Sensor

#62 | 2011-01-13
US20110008925A1
Electricity

CMOS image sensor with reduced dark current

#63 | 2010-11-18
US20100289082A1
Electricity

Isolation with offset deep well implants

#64 | 2010-10-21
US20100264473A1
Electricity

Anti-reflection structures for CMOS image sensors

#65 | 2010-06-03
US20100136733A1
Electricity

Methods of forming silicide strapping in imager transfer gate device

#66 | 2010-04-22
US20100097511A1
Electricity

High efficiency CMOS image sensor pixel employing dynamic voltage supply

#67 | 2010-04-22
US20100096536A1
Electricity

On demand circuit function execution employing optical sensing

#68 | 2010-04-08
US20100084690A1
Electricity

CMOS imager photodiode with enhanced capacitance

#69 | 2010-02-18
US20100038773A1
Electricity

Bond pad for wafer and package for CMOS imager

#70 | 2010-01-21
US20100013973A1
Electricity

Pixel sensor cell with frame storage capability

#71 | 2010-01-21
US20100013972A1
Electricity

Pixel sensor cell with frame storage capability

#72 | 2009-11-19
US20090286346A1
Electricity

Methods for forming anti-reflection structures for CMOS image sensors

#73 | 2009-11-19
US20090283807A1
Electricity

Anti-reflection structures for CMOS image sensors

#74 | 2009-10-22
US20090261415A1
Electricity

Fully-depleted low-body doping field effect transistor (FET) with reverse short channel effects (SCE) induced by self-aligned edge back-gate(s)

#75 | 2009-10-08
US20090250733A1
Electricity

Pixel sensor with reduced image lag

#76 | 2009-10-01
US20090242949A1
Electricity

CMOS image sensor with reduced dark current

#77 | 2009-09-24
US20090236644A1
Electricity

High efficiency CMOS image sensor pixel employing dynamic voltage supply

#78 | 2009-07-30
US20090193378A1
Physics

Modifying layout of IC based on function of interconnect and related circuit and design structure

#79 | 2009-07-16
US20090180010A1
Electricity

Low lag transfer gate device

#80 | 2009-07-16
US20090179232A1
Electricity

Low lag transfer gate device

#81 | 2009-05-14
US20090124047A1
Electricity

Stacked imager package

#82 | 2009-04-30
US20090108347A1
Electricity

Lateral diffusion field effect transistor with asymmetric gate dielectric profile

#83 | 2009-04-09
US20090090983A1
Electricity

DUAL WORK FUNCTION HIGH VOLTAGE DEVICES

#84 | 2009-02-19
US20090045502A1
Electricity

Semiconductor chip scale package incorporating through-vias electrically connected to a substrate and other vias that are isolated from the substrate, and method of forming the package

#85 | 2009-01-01
US20090001427A1
Electricity

CHARGE CARRIER BARRIER FOR IMAGE SENSOR

#86 | 2008-12-04
US20080296476A1
Electricity

Pixel sensor cell having a pinning layer surrounding collection well regions for collecting electrons and holes

#87 | 2008-11-06
US20080274578A1
Electricity

Method of forming a pixel sensor cell for collecting electrons and holes

#88 | 2008-11-06
US20080272400A1
Electricity

Pixel sensor cell for collecting electrons and holes

#89 | 2008-11-06
US20080272399A1
Electricity

Pixel sensor cell for collecting electrons and holes

#90 | 2008-10-23
US20080258194A1
Electricity

Flip FERAM cell and method to form same

#91 | 2008-06-26
US20080150147A1
Electricity

High surface area aluminum bond pad for through-wafer connections to an electronic package

#92 | 2008-06-05
US20080128767A1
Electricity

Silicide strapping in imager transfer gate device

#93 | 2008-05-22
US20080116537A1
Electricity

CMOS imager array with recessed dielectric

#94 | 2008-05-22
US20080116493A1
Electricity

Multi-layer spacer with inhibited recess/undercut and method for fabrication thereof

#95 | 2008-05-08
US20080108170A1
Electricity

CMOS imager with Cu wiring and method of eliminating high reflectivity interfaces therefrom

#96 | 2008-04-17
US20080088014A1
Electricity

Stacked imager package

#97 | 2008-03-27
US20080073742A1
Electricity

Stacked imager package

#98 | 2008-02-21
US20080042292A1
Electricity

Bond pad for wafer and package for CMOS imager

#99 | 2008-02-07
US20080029844A1
Electricity

ANTI-FUSE STRUCTURE OPTIONALLY INTEGRATED WITH GUARD RING STRUCTURE

#100 | 2008-01-24
US20080017857A1
Electricity

Method of adding fabrication monitors to integrated circuit chips

InventorID:

61399 ⎘