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Inventor profile of:

Benoit Amstatt

City:

Grenoble

Country:

France

Published Applications:

21

Last publication date:

2024-08-15

Top Assignees for applications by Benoit Amstatt

The entities that hold a legal rights for patent applications filed by inventor Amstatt Benoit:

Aledia 12 Grenoble, France
Commissariat A L'Energie Atomique Et Aux Energies Alternatives 8 Paris, France
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE 2 PARIS, France
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE 2 Paris Cedex 16, France
ALEDIA 2 Échirolles, France
Aledia 1 ECHIROLLES, France
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENEREGIES ALTERNATIVES 1 , France
ALEDIA 1 , France
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES 1 PARIS, France

Recent patent applications by Amstatt Benoit

Benoit Amstatt from Grenoble, FR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-08-15

US20240274747A1

METHOD FOR MANUFACTURING AN OPTOELECTRONIC DEVICE

#2 | 2024-07-25

US20240250206A1

OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME

#3 | 2023-08-24

US20230268460A1

OPTOELECTRONIC DEVICE AND MANUFACTURING METHOD

#4 | 2022-07-14

US20220223646A1

Optoelectronic device with light-emitting diodes a doped region of which incorporates an external segment based on aluminium and gallium nitride

#5 | 2021-12-09

US20210384253A1

Method for producing an optoelectronic device comprising light-emitting diodes which are homogeneous in dimensions

#6 | 2020-11-19

US20200365762A1

Optoelectronic device comprising three-dimensional light-emitting diodes

#7 | 2019-11-28

US20190363219A1

Optoelectronic device and method for manufacturing same

#8 | 2019-06-06

US20190172970A1

Optoelectronic device comprising three-dimensional diodes

#9 | 2019-05-23

US20190153619A1

Chemistry; metallurgy

Nucleation structure suitable for epitaxial growth of three-dimensional semiconductor elements

#10 | 2018-09-27

US20180277717A1

Optoelectronic device comprising three-dimensional electroluminescent diodes emitting at different wavelengths

#11 | 2017-11-30

US20170345652A1

Electronic device with a wire element extending from an electroconductive layer comprising zirconium carbide or hafnium carbide

#12 | 2017-05-25

US20170148950A1

Optoelectronic device having semiconductor elements

#13 | 2016-11-03

US20160322536A1

Optoelectronic device comprising semiconductor elements and its fabrication process

#14 | 2016-05-19

US20160141451A1

Method for manufacturing a semiconductor structure and semiconductor component comprising such a semiconductor structure

#15 | 2016-04-21

US20160111593A1

Optoelectronic device and method for manufacturing same

#16 | 2015-11-26

US20150340552A1

Optoelectronic device comprising microwires or nanowires

#17 | 2015-10-15

US20150295041A1

Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device

#18 | 2015-10-01

US20150279672A1

Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps

#19 | 2015-09-10

US20150255677A1

Optoelectronic device and method for manufacturing same

#20 | 2014-05-01

US20140120637A1

Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps

#21 | 2014-05-01

US20140117308A1

Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device

InventorID:

742005 ⎘