Denver, Colorado
United States
7
2016-01-19
The entities that hold a legal rights for patent applications filed by inventor DAVENPORT Thomas E.:
Thomas E. DAVENPORT from Denver, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Method minimizing imprint through packaging of F-RAM
#2 | 2015-03-12Eliminating shorting between ferroelectric capacitors and metal contacts during ferroelectric random access memory fabrication
#3 | 2014-05-29Method for improving data retention in a 2T/2C ferroelectric memory
#4 | 2013-11-14Enhanced hydrogen barrier encapsulation method for the control of hydrogen induced degradation of ferroelectric capacitors in an F-RAM process
#5 | 2013-02-14Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) with simultaneous formation of sidewall ferroelectric capacitors
#6 | 2013-02-14Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) device structure employing reduced processing steps
#7 | 2013-02-14Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) having a ferroelectric capacitor aligned with a three dimensional transistor structure
85196 ⎘