Munchen
Germany
26
2025-12-04
The entities that hold a legal rights for patent applications filed by inventor Pfirsch Frank:
Frank Pfirsch from Munchen, DE has applied for patents for these inventions. The list has both pending applications and granted patents:
Dual Gate Power Semiconductor Device and Method of Controlling a Dual Gate Power Semiconductor Device
#2 | 2025-08-07SEMICONDUCTOR SWITCHING MODULE WITH INSULATED GATE BIPOLAR TRANSISTOR AND UNIPOLAR SWITCHING DEVICE
#3 | 2025-03-27Power Semiconductor Device and Method of Producing a Power Semiconductor Device
#4 | 2025-01-09Power Semiconductor Device and Method of Producing a Power Semiconductor Device
#5 | 2025-01-02RC IGBT and Method of Operating an RC IGBT
#6 | 2025-01-02IGBT, Method of Operating an RC IGBT, and a Circuit Including an IGBT
#7 | 2024-12-05METHOD OF OPERATING A POWER TRANSISTOR FORMED BY A PLURALITY OF TRANSISTOR CELLS ELECTRICALLY CONNECTED IN PARALLEL
#8 | 2024-09-12SEMICONDUCTOR DEVICE INCLUDING TRENCH TRANSISTOR CELL UNITS
#9 | 2024-06-27Power Semiconductor Device and Method of Producing a Power Semiconductor Device
#10 | 2023-09-28Dual Gate Power Semiconductor Device and Method of Controlling a Dual Gate Power Semiconductor Device
#11 | 2023-08-31Semiconductor switching module with insulated gate bipolar transistor and unipolar switching device
#12 | 2014-12-04Field-effect semiconductor device
#13 | 2014-11-20Circuit with a plurality of diodes and method for controlling such a circuit
#14 | 2014-11-20Circuit with a plurality of bipolar transistors and method for controlling such a circuit
#15 | 2009-11-19Reduced free-charge carrier lifetime device
#16 | 2007-08-16Trench transistor and method for fabricating a trench transistor with high-energy-implanted drain
#17 | 2007-05-17Power semiconductor component with charge compensation structure and method for the fabrication thereof
#18 | 2006-12-07Edge structure with voltage breakdown in the linear region
#19 | 2006-06-08Power trench transistor
#20 | 2006-03-30High-voltage-resistant semiconductor component having vertically conductive semiconductor body areas and a trench structure
#21 | 2005-09-22Trench transistor and method for fabricating a trench transistor with high-energy-implanted drain
#22 | 2005-09-08Semiconductor component
#23 | 2005-08-02Field-effect power transistor
#24 | 2005-07-28Semiconductor diode and IGBT
#25 | 2005-04-21Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone
#26 | 2005-04-12Compensation component and method for fabricating the component
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