Integrated circuit package with partially exposed contact pads and process for fabricating the same

Description

CROSS-REFERENCE TO RELATED APPLICATION

This is a continuation-in-part of applicant's U.S. patent application Ser. No. 10/865,760, filed Jun. 14, 2004 now U.S. Pat. No. 7,091,581, entitled Integrated Circuit Package and Process for Fabricating the Same.

FIELD OF THE INVENTION

The present invention relates in general to integrated circuit packaging and more particularly to a process for fabricating an improved integrated circuit package.

BACKGROUND OF THE INVENTION

According to well known prior art IC (integrated circuit) packaging methodologies, semiconductor dice are singulated and mounted using epoxy or other conventional means onto respective die attach pads (attach paddles) of a leadframe strip. Traditional QFP (Quad Flat Pack) packages incorporate inner leads which function as lands for wire bonding the semiconductor die bond pads. These inner leads typically require mold-locking features to ensure proper positioning of the leadframe strip during subsequent molding to encapsulate the package. The inner leads terminate in outer leads that are bent down to contact a mother board, thereby limiting the packaging density of such prior art devices.

In order to overcome these and other disadvantages of the prior art, the Applicants previously developed a Leadless Plastic Chip Carrier (LPCC). According to Applicants' LPCC methodology, a leadframe strip is provided for supporting several hundred devices. Singulated IC dice are placed on the strip die attach pads using conventional die mount and epoxy techniques. After curing of the epoxy, the dice are wire bonded to the peripheral internal leads by gold (Au), copper (Cu), aluminum (Al) or doped aluminum wire bonding. The leadframe strip is then molded in plastic or resin using a modified mold wherein the bottom cavity is a flat plate. In the resulting molded package, the die pad and leadframe inner leads are exposed. By exposing the bottom of the die attach pad, mold delamination at the bottom of the die pad is eliminated, thereby increasing the moisture sensitivity performance. Also, thermal performance of the IC package is improved by providing a direct thermal path from the exposed die attach pad to the motherboard. By exposing the leadframe inner leads, the requirement for mold locking features is eliminated and no external lead standoff is necessary, thereby increasing device density and reducing package thickness over prior art methodologies. The exposed inner leadframe leads function as solder pads for motherboard assembly such that less gold wire bonding is required as compared to prior art methodologies, thereby improving electrical performance in terms of board level parasitics and enhancing package design flexibility over prior art packages (i.e. custom trim tools and form tools are not required). These and several other advantages of Applicants' own prior art LPCC process are discussed in Applicants' U.S. Pat. No. 6,229,200, the contents of which are incorporated herein by reference.

In applicant's own U.S. Pat. No. 6,585,905, issued Jul. 1, 2003 and incorporated herein by reference, a process is provided for fabricating a leadless plastic chip carrier in which the semiconductor die sits in a portion of the die attach pad that is reduced in thickness. The leadframe strip is selectively etched to define a pattern for the die attach pad and the contact pads such that a portion of the die attach pad has reduced thickness compared to the thickness of the contact pads. The semiconductor die is mounted in the portion of the die attach pad with reduced thickness, followed by wire bonding and overmolding. This structure provides for several advantages. For example, the package profile can be reduced and the length of the wire bonds from the semiconductor die to the die attach pad and to the contact pads is reduced, thereby reducing electrical impedance in the package. Also, the three-dimensional nature of the die attach pad provides additional exposed metal for adhering to the molding compound, thereby providing a more robust package.

Still further improvements in high performance integrated circuit (IC) packages are driven by industry demands for increased thermal and electrical performance, decreased size and cost of manufacture.

SUMMARY OF THE INVENTION

According to an aspect of the present invention, there is provided a process for fabricating an integrated circuit package. The process includes: selectively etching a leadframe strip to define a die attach pad and at least one row of contact pads; mounting a semiconductor die to one side of the leadframe strip, on the die attach pad; wire bonding the semiconductor die to ones of the contact pads; releasably clamping the leadframe strip in a mold by releasably clamping the contact pads; molding in a molding compound to cover the semiconductor die, the wire bonds and a portion of the contact pads not covered by the clamping; releasing the leadframe strip from the mold; depositing a plurality of external contacts in the form of solder ball contacts, on the one side of the leadframe strip, on the contact pads, such that the external contacts protrude from the molding compound; mounting at least one of an active and a passive component to a second side of said leadframe strip; and singulating to provide the integrated circuit package.

According to another aspect of the present invention, there is provided an integrated circuit package including a semiconductor die mounted to a die attach pad and at least one row of contact pads circumscribing the die attach pad. Wire bonds connect the semiconductor die to ones of the contact pads. A molding compound covers one side of the semiconductor die, the wire bonds and a portion of one side of the contact pads such that a remaining portion of the one side of the contact pads is uncovered and a second side of the contact pads is uncovered. External contacts are disposed on the one side of the contact pads, at the uncovered remaining portion, such that the external contacts protrude from the molding compound. At least one of an active and a passive component is mounted to the second side of one of the die attach pad and ones of the contact pads.

Advantageously, passive components are integrated into the package to provide a system-in-package integrated circuit package. In a particular aspect of an embodiment, the package includes two semiconductor dice, separated by a die attach pad. Advantageously, the die attach pad, when grounded, shields the bottom semiconductor die from electromagnetic interference. This is particularly useful in radio-frequency (RF) applications. In yet another aspect, a pre-tested package is mounted to the backside of the fabricated package using suitable means such as conductive epoxy or solder paste reflow technique. In still another aspect, stacked packages include passive components, thereby providing system-in-package integrated circuit packages.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be better understood with reference to the drawings and to the following detailed description in which like numerals denote like parts, and in which:

FIGS. 1A to 1J show processing steps for fabricating an integrated circuit package according to an embodiment of the present invention;

FIGS. 2A to 2K show processing steps for fabricating an integrated circuit package according to another embodiment of the present invention;

FIG. 3 shows a top plan view of the integrated circuit package of FIG. 4K;

FIGS. 4A to 4L show processing steps for fabricating an integrated circuit package according to another embodiment of the present invention; and

FIGS. 5A to 5K show processing steps for fabricating an integrated circuit package according to another embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Reference is made to the Figures to describe a process for fabricating an integrated circuit package according to an embodiment of the present invention. The integrated circuit package is indicated generally by the numeral 18 and includes a semiconductor die 22 mounted to a die attach pad 24 and at least one row of contact pads 26 circumscribing the die attach pad 24. Wire bonds 28 are then bonded to connect the semiconductor die 22 to ones of the contact pads 26. A molding compound 30 covers one side of the semiconductor die 22, the wire bonds 28 and a portion 32 of one side of the contact pads 26 such that a remaining portion 34 of the one side of the contact pads 26 is uncovered and a second side of the contact pads 26 is uncovered. External contacts 36 are disposed on the one side of the contact pads, at the uncovered remaining portion 34, such that the external contacts 36 protrude from the molding compound 30.

The integrated circuit package 18 will now be described in more detail with reference to FIGS. 1A to 1J, which show process steps for fabricating the integrated circuit package 18 in accordance with an embodiment of the present invention. As will be understood by those of skill in the art, the integrated circuit package 18 of the present invention is a leadless plastic chip carrier.

Referring first to FIG. 1A, an elevation view is provided of a Cu (copper) panel substrate that forms the raw material of the leadframe strip 20. As discussed in detail in Applicant's U.S. Pat. No. 6,229,200, the contents of which are incorporated herein by reference, the leadframe strip 20 is divided into a plurality of sections, each of which incorporates a plurality of units in an array (e.g. 3×3 array, 5×5 array, etc.). Only one such whole unit is depicted in the elevation view of FIG. 1A, portions of adjacent units being represented by stippled lines. It will be appreciated that adjacent units of the leadframe strip 20 are similar to the unit depicted in the Figures. It will also be appreciated that although the following description particularly describes a single unit of the leadframe strip 20, the integrated circuit package is gang fabricated and each step of the process is carried out for each unit of the leadframe strip.

Referring to FIGS. 1B and 1C, the leadframe strip 20 is selectively etched to pattern the die attach pad 24 and contact pads 26 for each unit. The selective etch is carried out by coating both sides of the leadframe 20 with a layer of photo-imageable etch resist such as photo-imageable epoxy. The etch resist is spin coated on the leadframe strip 20 and selectively exposed on the sides of the leadframe strip 20, with ultraviolet light using a photo-tool. The exposed portions are then removed. As best shown in FIG. 1B, the etch resist is thereby patterned to provide pits on the two sides of the leadframe strip 20, in which the metal substrate is exposed. The leadframe strip 20 is then etched in a conventional manner such as immersion or pressurized spray etching, to thereby pattern the die attach pad 24 and the contact pads 26. The etch resist is then stripped away by conventional means. The resulting leadframe strip 20 is shown in FIG. 1C.

As shown in FIGS. 1B and 1C, the etch resist is patterned such that the resulting die attach pad 24 of the leadframe strip 20 has a central portion 38 with a thickness that is less than the thickness of the raw material of the leadframe strip 20. The thickness of the resulting central portion 38 is less than the thickness of the remaining portion 34 of the contact pads 26, on which the external contacts 36 are later mounted. Clearly the central portion 38 of the leadframe strip 20 is appropriately sized and shaped to receive the semiconductor die 22. This reduction in thickness of the central portion 38 of the die attach pad 24 results in the formation of a ground ring 40 on the die attach pad 24, which circumscribes the central portion 38.

The contact pads 26 are also etched to provide portions of different thickness. As shown in FIG. 1C, the peripheral portions 42 of the contact pads 26 are selectively etched such that the peripheral portions 42 have a thickness that is less than the thickness of the raw material of the leadframe strip 20. Clearly the thickness of the peripheral portions 42 is less than the thickness of the remaining portion 34 of the contact pads 26. This variation in thickness facilitates bonding of the molding compound 30 with the contact pads 26 as an interlocking mechanical bond is provided between the molding compound 30 and the contact pads.

As shown in FIG. 1D, the singulated semiconductor die 22 is then mounted via epoxy (or other suitable means) to the central portion 38 of the die attach pad 24 and the epoxy is cured. Clearly, the semiconductor die 22 sits in a cavity, in the central portion 38 on one side of the die attach pad 24. Gold wire bonds 28 are then bonded between the semiconductor die 22 and ones of the contact pads 26 and between the semiconductor die 22 and the ground ring 40 (FIG. 1E).

The leadframe strip 20 is then releasably clamped in a modified mold by releasably clamping the remaining portion 34 of the contact pads (FIG. 1F). Molding using a molding compound 30 follows (FIG. 1G). The molding compound 30 covers one side of the semiconductor die 22, the wire bonds 28 and the portion 32 of the contact pads 26 that is not covered by the mold during clamping. The opposing second side of the die attach pad 24 and the contact pads 26 is exposed. Clearly, the modified mold has a profile defining the bottom of the cavity, that results in varying thickness of the molding compound, as shown in FIG. 1G.

After curing the molding compound 30, the leadframe strip is released from the mold (FIG. 1H).

Next, a plurality of external contacts 36 in the form of solder ball contacts are deposited on the exposed remaining portion 34 on the one side of the contact pads 26 (FIG. 1I). The solder ball contacts are deposited by applying a flux to the exposed remaining portion 34 on the one side of the contact pads 26 and, after placement of the solder balls by pick and place technique, the solder balls are reflowed using known reflow techniques. As shown, the external contacts (solder balls) 36 protrude from the mold compound to provide integrated circuit package standoff. The external contacts 36 are thereby connected to the contact pads 26 and through the wire bonds 28 to the semiconductor die 22. The external contacts 36 thus provide signal and power connections for the semiconductor die 22. In the present embodiment, the external contacts are tin/lead eutectic solder.

Singulation of the individual units from the full leadframe strip 20 is then performed by die punching, resulting in the integrated circuit package shown in FIG. 1J. In an alternative embodiment, the individual unit is singulated by saw singulation.

Reference is now made to FIGS. 2A to 2K to describe another embodiment of the present invention. FIGS. 2A to 2I are similar to FIGS. 1A to 1I described above. It will be understood that the process steps associated with FIGS. 2A to 2I are similar to the process steps associated with FIGS. 1A to 1I and are therefore not further described herein.

In FIG. 2J, however, a passive component 50 is mounted to the opposing second side of the leadframe strip 20. The passive component 50 is mounted to the opposing second side of ones of the contact pads 26 (on the side of the contact pads 26 that is opposite the side to which the external contacts 36 are attached). In the present embodiment, the passive component is a capacitor. Other passive components are possible, however, including for example, an inductor and a resistor. The passive component 50 is mounted to ones of the contact pads using conductive epoxy and the epoxy is cured.

Next, the individual units are singulated from the leadframe strip 20 by one of die punching and saw singulation, resulting in the integrated circuit package shown in FIG. 2K.

FIG. 3 shows a top plan view of the integrated circuit package shown in FIG. 2K, including the passive component 50 epoxy attached to ones of the contact pads 26 to thereby provide a system-in-package integrated circuit package.

Referring now to FIGS. 4A to 4L, yet another embodiment of the present invention is shown. FIGS. 4A to 4I are similar to FIGS. 1A to 1I described above. It will be appreciated that the processing steps associated with FIGS. 4A to 4I are similar to the processing steps associated with FIGS. 1A to 1I and are therefore not further described herein.

In FIG. 4J, a leadless plastic chip carrier 52, such as the type described in U.S. Pat. No. 6,229,200, the entire contents of which are incorporated herein by reference, is mounted to the opposing second side of the leadframe strip 20. The leadless plastic chip carrier 52 is mounted to the second side of the leadframe strip 20 by attaching the opposing second side of the die attach pad 24 (opposite the side to which the semiconductor die 22 is attached) to a die attach pad 54 of the leadless plastic chip carrier 52, using conductive epoxy. Interior portions of the opposing second side of the contact pads 26 (opposite the side to which the external contacts 36 are attached) are also attached to ones of contact pads 56 of the leadless plastic chip carrier 52, using conductive epoxy. The epoxy is then cured. Thus, an active component in the form of the leadless plastic chip carrier 52 is attached to the second side of the leadframe strip 20. In an alternative embodiment, a solder paste reflow technique is used to fix the leadless plastic chip carrier 52 to the second side of the leadframe strip 20, rather than conductive epoxy.

A passive component 50 is mounted to exposed portions of the opposing second side of the contact pads 26 using conductive epoxy and the epoxy is cured (FIG. 4K). The passive component 50 is one of a capacitor, an inductor, and a resistor.

Next, the individual units are singulated from the full leadframe strip 20 by one of die punching and saw singulation, resulting in the integrated circuit package shown in FIG. 4L.

Reference is now made to FIGS. 5A to 5K to describe still another embodiment of the present invention. FIGS. 5A to 5C are similar to FIGS. 1A to 1C and therefore FIGS. 5A to 5C are not further described herein. As shown in FIG. 5D, the singulated semiconductor die 22 is mounted via epoxy to the central portion 38 of the die attach pad 24, and the epoxy is cured. As in FIG. 1D, the semiconductor die 22 is thereby mounted in a cavity in the central portion 38 on the one side of the die attach pad 24. Unlike FIG. 1D, however, a second semiconductor die 58 is mounted to the opposing second side of the die attach pad 24.

Gold wire bonds 28 are then bonded between the semiconductor die 22 and ones of the contact pad 26 and between the semiconductor die 22 and the ground ring 40. Gold wire bonds 60 are also bonded between the second semiconductor die 58 and ones of the contact pads 26 (FIG. 5E).

The leadframe strip 20 is then releasably clamped in a modified mold by releasably clamping the remaining portion 34 of the contact pads (FIG. 5F). Molding using a molding compound 30 follows (FIG. 5G). The molding compound 30 covers the semiconductor die 22, the wire bonds 28 and the portion 32 of the one side of the contact pads 26 that are not covered by the mold during clamping. The molding compound 30 also covers the second semiconductor die 58, the wire bonds 60 and a portion of the opposing second side of the contact pads 26 that is not covered by the mold during clamping. Clearly, the modified mold has a profile defining a bottom cavity and a top cavity that results in varying thickness of the molding compound 30, as shown in FIG. 5G.

After curing the molding compound 30, the leadframe strip 20 is released from the mold (FIG. 5H).

Next, the external contacts 36 in the form of solder ball contacts are deposited on the exposed remaining portion 34 on the one side of the contact pads 26 (FIG. 5I). The solder ball contacts are deposited by applying flux to the exposed remaining portion 34 on the one side of the contact pads 26 and after placement of the solder balls by pick and place technique, the solder balls are reflowed using known reflow techniques. As shown, the external contacts (solder balls) 36 protrude from the mold compound to provide integrated circuit package standoff. The external contacts 36 are thereby connected to the contact pads 26 and through the wire bonds 28 to the semiconductor die 22. The external contacts are also thereby connected through the contact pads 26 and the gold wire bonds 60 to the second semiconductor die 58. The external contacts 36 thus provide signal and power connections for the semiconductor die 22 and the second semiconductor die 58. In the present embodiment, the external contacts are tin/lead eutectic solder.

A passive component 50 is mounted to exposed portions of the opposing second side of the contact pads 26 using conductive epoxy and the epoxy is cured (FIG. 5J). The passive component 50 is one of a capacitor, an inductor, and a resistor.

Finally, the individual units are singulated from the full leadframe strip 20 by one of die punching and saw singulation, resulting in the integrated circuit package shown in FIG. 5K.

Specific embodiments of the present invention have been shown and described herein. Modifications and variations to these embodiments may occur to those skilled in the art. For example, the size and shape of many of the elements may differ while still performing the same function. In one alternative embodiment, rather than tin/lead eutectic solder as described above, the external contacts 36 can be substantially lead-free solder. Also, while some of the embodiments described above include a passive component 50 mounted to the contact pads 26, any suitable number of passive components 50 can be included and any suitable combination of passive components 50 such as capacitors, inductors and resistors, can be used. Further, the order of some of the steps of the process as described above, may vary.

Still other modifications and variations may occur to those skilled in the art. All such modifications and variations are believed to be within the sphere and scope of the present invention.