Integrated quartz MEMS tuning fork resonator/oscillator

Description

CROSS REFERENCE TO RELATED APPLICATIONS

The present disclosure claims the benefit of and is a divisional of U.S. patent application Ser. No. 14/973,701 filed on Dec. 17, 2015, which is hereby incorporated by reference in its entirety.

This application is related to (i) U.S. Pat. No. 7,750,535 issued to Randall L. Kubena et al. on Jul, 6, 2010 and entitled “Quartz-based Nanoresonator” and (ii) U.S. Pat. No. 7,647,688 to David T. Chang et al, on Jan. 19, 2010 and entitled “Method of fabricating a low frequency quartz resonator”, the disclosures of these two US patents are hereby incorporated herein by reference.

STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT

None

Technical Field

This invention relates to an integrated quartz tuning fork resonator/oscillator which can are preferably made using Micro Electro Mechanical Systems (MEMS) techniques. The disclosed tuning fork mode resonator/oscillator can operate in a kHz frequency range (for example, a kHz ratio from 10 kHz to 100 kHz) which is a much lower frequency range than found in shear mode resonators/oscillators which operate in a MHz range (typically at HF, VHF or UHF frequencies).

Background

In many conventional RF communication and sensor systems, a HF, VHF or UHF signal is generated by a MHz clock for a RF signal of interest. However, energy-efficient microprocessors, consumer electronics, or sensors are typically clocked using a much lower frequency oscillator in the 16-32 kHz range. This saves power since the lower frequency clocks can run with very low power (in the nW to μW range of powers) compared to more moderate power (in the mW range of powers) that is typical for MHz oscillators.

However, resonators operating at such lower frequencies are typically tuning-fork resonators (for which prior art designs are typically 2-10 mm in length) rather than the shear mode slabs used with MHz oscillators. For some applications, where a combination of both analog and digital systems are utilized and time synchronization is critical for the various RF subsystems, e.g., for GPS or inertial navigation applications, the phase noise and jitter of a kHz clock generated by a prior art tuning-fork resonator can reduce the accuracy and increase the power of the overall system. This can be due to frequency drift of the energy-efficient microprocessor's clock between clock cycles requiring more extensive processing during the update for re-synchronization. Thus, resonators for very low power, small, high Q, low phase noise clocks, which can also be easily integrated with other miniaturized components, are needed. This disclosure describes a new method of 1) reducing the size of kHz resonators and clocks, 2) integrating the kHz resonator with electronics on the substrate to form an integrated kHz clock, and 3) integrating the kHz clock with a MHz oscillator on a common semiconductor substrate for highly compact RF system integration. For example, with reference to item 3), a kHz clock (which calls for a kHz oscillator) is used by microprocessors for logic synchronization whereas UHF, VHF or HF oscillators are used for RF analog signal processing. Thus, a kHz frequency oscillator and ono or more UHF, VHF or HF oscillators are needed for optimization of the power budgets when both analog and digital signals are present and preferably these oscillators should preferably use fabrication techniques which can be harmoniously used together to realize a single chip having two (or more) oscillators disposed thereon, one of which operates in the kHz frequency range (preferably from 10 to 100 kHz) and another one (or more) which operates in the UHF, VHF or HF frequency range (i.e., at frequencies above 3 MHz).

kHz frequency range quartz tuning fork mode oscillators have been manufactured for years using a combination of wet quartz etching and hybrid packaging in ceramic packages using a free standing plate of quartz 10. See the prior art quart tuning fork of FIGS. 1a-1c. The tuning fork electrodes are deposited on the top (see elements 11t), bottom (see elements 11b), and sides (see elements 11s) of the quartz tines in order to generate the proper lateral electric fields in the Z′ cut crystal to obtain extensional motion along the side of the tines. The Z′ direction is perpendicular to the plane of the tuning fork crystal. Typically, to obtain a parabolic f/T profile, the Z direction is rotated 0-5° around the X-axis as is depicted by FIG. 2. In order to deposit the side electrodes 11s (which are not shown in FIG. 1a for ease of illustration), a shadow masking technique is utilized after the resonators are etched from a single piece of quartz 10. However, this prior art technique is difficult to implement when a wafer-level process is used and when the quartz resonators are bonded to an underlying handle wafer. When using a handle wafer, it is difficult to cleanly define the side electrodes while obtaining uniform step coverage and no overcoating of handle wafer itself. During the release of the resonators from the handle wafer, any overcoated metal can tear from electrodes 11s on the sidewalls of the tines, thus resulting in a low yield. In addition, using prior art processes, the integration of a kHz clock with other components was not possible.

U.S. Pat. No. 7,750,535 mentioned above relates to a method for integrating a MHz frequency range quartz shear mode resonator to an arbitrary substrate for integrated MHz frequency oscillators and filters. The technology disclosed herein extends this prior art technique by describing a method for integrating a much lower frequency (kHz frequency range) tuning fork resonator using extensional-mode piezoelectric coupling to provide a wafer-scale process for integrated quartz tuning-fork resonator/oscillators. The disclosed resonator is different compared to conventional tuning fork resonators to allow for planar processing of the electrodes on top and bottom of a quartz plate without the need for side electrodes. The new process disclosed herein can be utilized harmoniously with and contemporaneously during a shear-mode fabrication sequence to allow for integration of both MHz shear-mode and kHz tuning-fork mode resonators on the same semiconductor wafer, should that be desired. Additionally, ultra-small kHz resonators can be fabricated with wafer-level processing and also allow for small die sizes. As will be seen, the presently disclosed resonator may have a size of only 1.26 mm long and 0.8 mm wide whereas prior art kHz resonators tend to be 2-10 mm in size.

BRIEF DESCRIPTION OF THE INVENTION

In one aspect, the present invention provides a piezoelectric quartz tuning fork resonator having a pair of tines formed from a common quartz plate, with a middle electrode and two outer electrodes being disposed at or on top and bottom surfaces of each of said pair of tines and interconnected such that the outer electrodes at or on the top and bottom surfaces of a first one of said pair of tines are connected in common with the middle electrodes on the top and bottom surfaces of a second one of said pair of tines and further interconnected such that the outer electrodes at or on the top and bottom surfaces of the second one of said pair of tines are connected in common with the middle electrodes on the top and bottom surfaces of the first one of said pair of tines.

In another aspect, the present invention provides a piezoelectric quartz tuning fork resonator having a pair of tines formed from an integral quartz plate, with metal electrodes formed only on top and bottom major surfaces of said tines and with interconnections disposed on and in said integral quartz plate, whereby when an AC current is applied to said metal electrodes by way of said interconnections, said tines vibrate in response thereto in a tuning fork mode.

In yet another aspect, the present invention provides a method of making a piezoelectric quartz tuning fork resonator which may be integrated on a semiconductor (such as Si) substrate, the method comprising: applying metal forming at least six elongated electrodes to a top side of a quartz substrate; bonding the quartz substrate to a handle wafer; thinning the quartz substrate to a desired thickness; etching two openings or vias through the quartz substrate which openings or vias are filled with metal and the metal in the openings or vias is coupled to said elongated electrodes disposed on the top side of the quartz substrate; etching the quartz substrate so that two elongate tines are defined thereby with three of said six elongated electrodes disposed on each tine thereof; applying metal forming three elongated electrodes to a bottom side of the quartz substrate on each time thereof; applying metal for forming bonding pads on the bottom side of the piezoelectric quartz tuning fork resonator; applying metal for interconnecting the bonding pads, the metal in the openings or vias and the elongated electrodes disposed on the bottom side of the quartz substrate; bonding the etched resonator to said semiconductor substrate; and releasing the resonator from the handle wafer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1a is a top view of a prior art tuning fork kHz frequency range quartz resonator;

FIGS. 1b and 1c are cross sectional views of the two tines shown in FIG. 1a; the X, Y′, and Z′ orientation of the quartz crystallography of the two tines is also indicated;

FIG. 2 in parts a) and b) depicts the quartz crystallography of prior art quartz tuning forks, which crystallography is preferably maintained in connection with the present invention; part c) of FIG. 2 depicts the vibration mode of a prior art tuning fork resonator;

FIG. 3a is a top view of the electrodes of a quartz resonator in accordance with the present invention;

FIGS. 3b and 3c are cross sectional views of the two tines shown in FIG. 3a; the X, Y′, and Z′ orientation of the quartz crystallography of the two tines is also indicated;

FIGS. 4a and 4b are top and bottom views of one embodiment of a quartz resonator in accordance with the present in which also show a possible embodiment of the head portion of the quartz resonator where the tuning fork resonator can be to mounted to a substrate preferably bearing integrated circuits to which the electrodes of the quartz resonator mate to form a kHz clock;

FIG. 4c is a cross-sectional view through the tines along section line 4c-4c as shown in FIG. 4a.

FIG. 4d, is a cross-sectional view through the vias in the mounting portion of the quartz plate along section line 4d-4d as shown in FIG. 4a.

FIG. 5 depicts the tuning fork quartz resonator in accordance with the present invention installed or mounted on a semiconductor or chip substrate along with a HF, VHF or UHF shear mode resonator.

FIGS. 6a-6q depict steps which may be used to make and install a tuning fork quartz resonator in accordance with the present invention installed on a semiconductor or chip substrate.

FIGS. 7a and 7b are top and bottom views of a quartz resonator in accordance with the present invention which also show another possible embodiment of the head portion of the quartz resonator where the tuning fork resonator can be conveniently mounted to a substrate preferably bearing integrated circuits to which the electrodes of the quartz resonator mate to form a kHz clock;

FIG. 7c is a cross-sectional view through the tines along section line 7c-7c as shown in FIG. 7a.

FIG. 7d, is a cross-sectional view through the vias in the mounting portion of the quartz plate along section line 7d-7d as shown in FIG. 7a.

DETAILED DESCRIPTION

A detailed description follows. Common reference numerals are for multiple embodiments where the reference numerals refer either to identical or nearly identical structure in the various embodiments or to structure which performs identical or very similar functions in the various embodiments.

For the cut angle shown in part b) of FIG. 2 of quartz (commonly called a Z-cut), the component of the electric field in the +X direction produces a contraction in the dimension in the Y′ length of the tines while the component of the electric field in the −X direction produces an extension in the dimension in the Y′ length of the tine. Thus, in both the prior art tuning fork resonator of FIGS. 1a-1c and the tuning fork of the present invention as exemplified by the embodiment of FIGS. 3a-3c, a tuning fork vibrational mode is generated for the two tines which reduces acoustical energy loss to the mounts and yields a high Q or quality factor. By fabricating the tines using plasma etching, the dimension thereof can be precisely controlled which is needed to achieve a high Q of 10,000 or more.

The curved lines with arrowheads depicted for the prior art tuning fork tines of FIGS. 1b and 1c show the electric fields imposed when an electrical signal having the instantaneous polarity indicated by the +and − signs occurs on the electrodes 11t, 11b and 11s. Similar line with arrowheads are shown for the tines of the embodiment of the present invention depicted by FIGS. 3b and 3c, showing the electric fields imposed when an electrical signal having the instantaneous polarity indicated by the + (plus) and − (minus) signs occurs on the electrodes 12t₁, 12t₂, 12t₃, 12b₁, 12b₂ and 12b₃ of tine 1 and electrodes 13t₁,13t₂, 13t₃, 13b₁, 13b₂ and 13b₃ of tine 2. The electric fields occurring in the tines of the prior art tuning fork resonator are very similar to the electric fields occurring in the tines of the tuning fork resonator of the present invention, but there is no need for the difficult-to-manufacture side electrodes to be disposed on the sidewalls of the tines of the tuning fork resonator of the present invention. The tines of the tuning fork resonator of the present invention will vibrate as shown in part c) of FIG. 2 when an AC signal is applied to its electrodes 12t₁, 12t₂, 12t₃, 12b₁, 12b₂ and 12b₃ of tine 1 and electrodes 13t₁, 13t₂, 13t₃, 13b₁, 13b₂ and 13b₃ of tine 2.

Instead of forming electrodes on the sides of the tines as done in the prior art, in the depicted embodiment of the present invention three elongate electrodes 12t₁, 12t₂, and 12t₃ are formed on the top side of tine 1 and three elongate electrodes 13t₁, 13t₂, and 13t₃ are formed on the top side of tine 2. Additionally, three elongate electrodes 12b₁, 12b₂, and 12b₃ are formed on the bottom side of tine 1 while three elongate electrodes 13b₁, 13b₂, and 13b₃ and are formed on the bottom side of tine 1. The outermost electrodes 12t₁ and 12t₃ on the top side of tine 1 are connected in common preferably by relatively short length of an electrode 12ct which is identified on FIG. 4a and which is preferably disposed near a distal end of tine 1 The outermost electrodes 13t₁ and 13t₃ on the top side of tine 2 are connected in common preferably by relatively short length of electrode 13ct which is identified on FIG. 4a and which is preferably disposed near a distal end of tine 1. Similarly, the outermost electrodes 12b₁ and 12b₃ on the bottom side of tine 1 are also connected in common by relatively short length of electrode 12cb which is identified on FIG. 4b and which is disposed near the distal remote end of tine 1. And the outermost electrodes 13b₁ and 13b₃ on the bottom side of tine 2 are also connected in common by relatively short length of electrode 13cb which is identified on FIG. 4b and which is likewise disposed near the distal end of tine 2. The instantaneous polarity of an applied AC signal is shown by the + (plus) and − (minus) signs adjacent the electrodes on FIGS. 3b and 3c.

FIGS. 3a, 3b and 3c depict the tines in some detail, but do not show how the tines of the resonator might be mounted. FIG. 4a is a top view of a tuning fork resonator in accordance with an embodiment 100 of the present invention and it includes a mounting portion 10m of the quartz substrate 10. Similarly, FIG. 4b is a bottom view of the tuning fork resonator in accordance with the embodiment 100 of the present invention and it also depicts the mounting portion 10m of the quart substrate 10. In the bottom view of FIG. 4b two electrically conductive pads 14₁ and 14₂ can be seen which are formed on the bottom surface of the quartz plate 10 of resonator 100. These pads 14₁ and 14₂ are preferably used both to form electrical connections or bonds between the tuning fork resonator 100 and integrated circuits 305 formed in a chip 300 and to mount the tuning fork resonator 100 mechanically and securely to an upper surface of the chip 300. These pads 14₁ and 14₂ also have + (plus) and − (minus) signs on them which follow the instantaneous polarity convention of the other figures. These pads 14₁ and 14₂ appear as dashed line circles on FIG. 4a since they do not need to penetrate the quartz plate 10. The electrical connections or bonds are preferably formed using a compression bonding technique to form very low resistance connections with the integrated circuits formed in chip 300 and at the same time securely mount the tuning fork resonator 100 to chip 300.

Vias 16₁ and 16₂, which do penetrate the quartz plate 10, are also shown on FIGS. 4a, 4b and 4d. The vias 16₁ and 16₂ are filled with metal and preferably pads 17₁ and 17₂ are also formed (on the top surface of quartz plate 10 preferably before the vias 16₁ and 16₂ themselves are formed and filled with metal—see the sectional view of 4d) to provide a connection points between the metal in the vias 16₁ and 16₂, respectively, and the depicted conductors 18. Pads 19₁ and 19₂ are formed on the bottom surface preferably after the vias 16₁ and 16₂ are formed and filled with metal.

Pads 17₁, 17₂, 19₁ and 19₂ along with vias 16₁ and 16₂ are more easily seen in the sectional view of FIG. 4d. The mounting pad 14₂ is not shown in FIG. 4d for ease of illustration.

Pad 17₁ and via 16₁ have a + (plus) sign while pad 17₂ via 16₂ have a − (minus) sign which signs follow the instantaneous polarity convention being used in this description. Via 16₁ and its pads 17₁ and 191 are ohmically connected by conductors 18 to outermost electrodes 12t₁ and 12t₃ of top side of tine 1, to the middle or innermost electrode 13t₂ on the top side of tine 2, to the outmost electrodes 12b₁ and 12b₃ on the bottom side of tine 1 and to the middle or innermost electrode 13b₂ on the bottom side of tine 2. For the top electrodes, these connections are made directly to via 16₁ and through the relatively short conductor 12ct. For the bottom side electrodes, these connections are routed through pad 14₁ and through the relatively short conductor 12cb. Other routings of these connections are possible, but we show one possible muting to demonstrate the concept.

Similarly, via 16₂ and its pads 17₂ and 19₂ are ohmically connected by conductors 18 to the outermost electrodes 13t₁ and 13t₃ on the top side of tine 2, to middle or innermost electrode 12t₂ on the top side of tine 1, to outer most electrodes 13b₁ and 13b₃ on the bottom side of tine 2 and to the middle or innermost electrode 12b₂ on the bottom side of tine 1. Again, for the top side electrodes, these connections are made directly to pad 17₂ and through the relatively short conductor 13ct. For the bottom side electrodes, these connections are made with mounting pad 14₂ (with the via as a common starting point) and 13cb. Other routing of these connections are possible, but we show one possible routing to demonstrate the concept.

The signal applied to the electrodes is preferably a sine wave AC signal. The + (plus) and − (minus) signs just show which electrodes are connected in common and just reflect an instantaneous voltage of the AC signal applied at pads 14₁ and 14₂. The pulse signs could be replaced with minus signs and the minus signs could be replaced with plus signs without affecting now the electrodes are wired up.

Other cut angles of quartz could be utilized for the tuning fork 100, such as an AT-cut to optimize the f/T profile for a particular application.

In the embodiment of FIGS. 4a-4d, the vias and 16₁ and 16₂ are laterally spaced from the bonding pads 14₁ and 14₂. However, one or both of the vias 16₁ and 16₂ can be located under, with or immediately adjacent bonding pads 14₁ and 14₂. See, for example, the embodiment of FIGS. 7a-7d where the vias 16₁ and 16₂ are depicted within the outlines of the bonding pads 14₁ and 14₂. The embodiment of FIGS. 4a-4d is believed to be superior to the embodiment of FIGS. 7a-7d since by laterally spacing the vias 16₁ and 16₂ from the bonding pads 14₁ and 14₂ it is believed that the heat and pressure from bonding the resonator to a semiconductor substrate is less likely to disturb the metal in the vias 16₁ and 16₂.

FIGS. 4a and 7a include possible dimensions of the tines and other aspects of the depicted embodiment 100 of the kHz tuning fork. These dimensions are merely suggested dimensions of one possible embodiment of the present invention. Other dimensions will prove to be satisfactory. Using an elastic modulus of quartz of 87 GPa and a density of 2.6 g/cm.³, one can calculate that a 20 μm wide tine that is 760 μm long (as shown for the depicted embodiment of FIGS. 4a and 4b) will oscillate at 32 kHz. An appropriate thickness of the quartz plate 10 is about 10 μm for this 32 kHz embodiment. Since three electrodes are necessary for both the top and bottom of each tine, this implies that each electrode 12t₁, 12t₂, 12t₃, 12b₁, 12b₂ and 12b₃ would have a linewidth of no more than approximately 3 μm which easily fits within a 20 μm tine width.

If it were desired that the tuning fork resonator be resonant a 100 kHz, then one needs to make the tines shorter and/or wider. In general, the frequency scales as width/length². So to make a 10 kHz resonator, keeping the width tine the same (at 20 μm), increasing the tine length to 1360 um would be needed. To make a 100 kHz resonator, increasing the width to 40 μm and decreasing the tine length to 608 μm would work.

Each electrode 12t₁, 12t₂, 12t₃, 12b₁, 12b₂, 12b₃, 13t₁, 13t₂, 13t₃, 13b₁, 13b₂ and 13b₃ may have a common linewidth (of for example 3 μm) as suggested above or the center electrodes 12t₂ and 12b₂ of tine 1 may be wider than the outermost electrodes 12t₁, 12t₃, 12b₁ and 12b₃ as suggested by FIG. 3b and the center electrodes 13t₂ and 13b₂ of tine 2 may be wider than the outermost electrodes 13t₁, 13t₃, 13b₁ and 13b₃ as suggested by FIG. 3c. Additionally, the outermost electrodes 12t₁, 12t₃, 12b₁ and 12b₃ of tine 1 and the outermost electrodes 13t₁, 13t₃, 13b₁ and 13b₃ of tine 2 should be disposed at or very close to (for example, preferably no more than a linewidth away from) the edges of the tines to help maximize the horizontal or lateral component of the electric fields depicted by the lines with arrowheads in FIGS. 3b and 3c.

A linewidth of no more than approximately 3 μm is easily attainable using conventional contact optical lithography. Including the depicted bond pads and vias, this embodiment of a tuning fork resonator would be about 1.26 mm long and 0.8 mm wide as is noted on FIG. 4a. Using higher resolution lithography, either optical or ebeam, would allow the width and lengths of the tines to be reduced for even smaller implementations if that is desired.

The embodiments of FIGS. 4a - 4d and FIGS. 7a-7d have elongated electrodes on both major (the top and bottom) surfaces of the tines. However, embodiments with elongated electrodes on only one of the major surfaces (top or bottom) on the tines are certainly possible. Additionally, the elongated electrodes on either or both the major (top and bottom) of the tines surfaces could be reduced or increased in number. For example, turning again to FIGS. 3b and 3c, it should be apparent that the electric fields depicted by the lines with arrowheads would still have a desirable lateral component if certain ones of the depicted electrodes were omitted. As just mentioned, all of the top or all of the bottom electrodes could be omitted, but a lateral electric field component would still occur. That is also true if fewer than all electrodes are omitted from one of the major surfaces. Also, the center electrodes could be limited to just one major (top or bottom) surface while the outermost electrodes could be limited to another major (top or bottom) surface. There are many possible ways of placing the elongated electrodes only on the top and/or bottom major surfaces of the tines (but not on the side surfaces of the tines) and still realize the desired lateral electric field components and thus this discussion is not meant to be exhaustive of all such ways of achieving the desired lateral electric field components.

FIG. 5 depicts a tuning fork resonator 100 in accordance with the present invention disposed on (and mated to) a semiconductor substrate or chip 300 (which may be an ASIC) which preferably has a plurality of active circuits 305 embedded in it. FIG. 5 also depicts a HF, VHF or UHF shear type resonator 200 also disposed on (and mated to) the same semiconductor substrate or chip 300. The active circuits in semiconductor substrate or chip 300 preferably includes the electronics needed to allow tuning fork resonator 100 to fix the frequency of a kHz clock and also includes the electronics needed to allow shear mode resonator 200 to fix the frequency of a HF, VHF or UHF clock. The processing preferably used to make and install the tuning fork resonator 100 in accordance with the present invention on semiconductor substrate or chip 300 is described with reference to FIGS. 6a-6q and is similar to the processing used to make and install the HF, VHF or UHF shear type resonator 200 on the semiconductor substrate or chip 300 so that both resonators 100 and 200 may be conveniently formed in parallel (if desired) and installed on a common substrate or chip 300.

Typically the shear type resonator 200 will have a thicker quartz substrate than the quartz substrate of the tuning fork resonator 100 (it could be several times thicker) so the shear type resonator 200 should preferably be installed on semiconductor substrate or chip 300 after the tuning fork resonator 100 of the present invention has been installed thereon to prevent the handle wafer of the shear mode resonator from hitting the previously bonded tuning fork resonator.

The formation and installation of the tuning fork resonator 100 on semiconductor substrate or chip 300 will now be described with reference to FIGS. 6a- 6q. In many applications it may well be desirable to mount a kHz tuning fork type resonator 100 as described herein along with a shear type resonator 200 for the reasons mentioned above. The processing described below with reference to FIGS. 6a-6q is sufficiently harmonious with processing used to fabricate a shear type resonator 200 (see U.S. Pat. No. 7,647,688), that both resonators could be fabricated more or less at the same time using different cut-angles for the resonator substrates and handle wafers.

In FIG. 6a the starting material for the tuning fork resonator is shown. The starting material is preferably the quartz plate 10 having a crystallographic orientation (Z-cut) as previously described with reference to FIG. 2. Next, as shown in FIG. 6b, the top side metallization (preferably Au) is deposited and patterned to form the pads 17₁ and 17₂ along with electrodes 12t₁, 12t₂, 12t₃, 13t₁, 13t₂, and 13t₃ and interconnects 18 (see also FIG. 4a as only electrode 13t₃ is easily seen in FIG. 6b).

FIG. 6c depicts a handle wafer 20 which is preferably formed also of quartz material with the same crystallographic orientation as plate 10. Other materials (such as silicon) or other quartz crystallographic orientations may be used for handle wafer 20, if desired, but those materials could pose certain fabrication issues due to differential rates of thermal expansion. So a quartz material having the same crystallographic orientation as plate 10 is preferred for handle wafer 20. A temporary adhesive 22₁ and 22₂ is applied to the handle wafer (see FIG. 6d) and to the quartz plate 10 (see FIG. 6e) and the two are temporarily bonded together via the temporary adhesive which becomes a common adhesive layer 22 as is depicted by FIG. 6f.

The handle wafer 20 is used to support quartz plate 10 as it is ground down (see FIG. 6g) and polished to a desired thickness. As previously discussed, the quartz plate 10 may be reduced in a thickness of, for example, 10 μm. Then a mask 24 is applied (the mask 24 is preferably metal) and pattered (see FIG. 6h) to define openings therein through which the quartz plate 10 will be subsequently etched (see the next step depicted by FIG. 6i) to define vias 16₁ and 16₂ (the opening therefore are not shown in FIGS. 6h and 6i for ease of illustration, so see FIG. 4d where the vies 16₁ and 16₂ can be easily seen) as well as the tuning fork outline shape 26 of the tuning fork resonator as depicted, for example, by FIG. 4a.

As is represented by FIG. 6j, the metal mask 24 is removed and the vias 16₁ and 16₂ are filled with metal (but the vias 16₁ and 16₂ filled with metal are not shown by phantom lines, which would normally be used in this side elevational view—since they are hidden from a direct view—but phantom lines are not used given the limited space and for ease of illustration). Then bottom side metallization (preferably Au) is deposited and patterned to define the metal pads 19₁ and 19₂ along with bonding pads 14₁ and 14₂, the bottom side electrodes 12b₁, 12b₂, 12b₃, 13b₁, 13b₂ and 13b₃ and interconnects 18 therefor on the bottom surface of plate 10. Only one bonding pad (14₁) and one bottom electrode (13b₃) can be seen in this side elevational view, but the bonding pads and all the bottom electrodes as well as the interconnects 18 can be seen in FIG. 4b).

FIG. 6k shows the starting material of the semiconductor substrate or chip 300. The semiconductor material could well be silicon (Si) or another other semi-conductive material, including SiGe and GaAs. Typically, chip 300 would be a Application Specific Integrated Circuit or ASIC. The ASIC preferably include active circuits (represented by a dashed line oval 305) and those active circuits would typically include the electronics used to form a clock controlled by resonator 100 (and also resonator 200 if it is used as well). Chip 300 preferably has two or more buried conductors (metal or a implanted region) 306 which are partially covered by a insulating layer 308 leaving two exposed opening 310 and 312 for each a the two or more buried conductors 306. Pedestal 314 is a raised region (preferably formed of a dielectric material) which will receive metal pads 319 (see FIG. 6l) disposed on the pedestal 314 and sized and positioned thereon to mate with the respective bonding pads 14₁ and 14₂ on the the bottom side bottom side of resonator 100. Each metal pad 319 also has interconnect metal 319I (see FIG. 6l) to form an ohmic connection with at least one of the busied conductors 306. Layer 316 may be a passivation layer to protect chip 300.

In FIG. 6l seal ring metal 318, if used, may be deposited at the same time the interconnect metal 319I and pad 319 metal are deposited. Indium metal 320 is preferably deposited atop each of the pads 319 (see FIG. 6m) and preferably sized and positioned as pads thereon for mating with the respective bonding pads 14₁ and 14₂ on the bottom side of resonator 100.

The resonator from FIG. 6j is then flipped and compression bonded (preferably by a Au/In eutectic bond) at bonding pads 14₁ and 14₂ on the bottom side of resonator 100 to the similarly sized and relatively located pads of indium metal 320 as is shown by FIG. 6n. The temporary adhesive is next removed preferably by soaking in a suitable solvent to release the resonator 100 from the handle wafer 20 as is shown at FIG. 6o.

If the resonator is to be located in a vacuum cavity, a cover 400 is formed with suitable bonding pads 402 (see FIG. 6p). The cover 400 is then located over the chip 200 to encapsulate resonator 100 (and optionally also resonator 200—see FIG. 5) in a vacuum (or other desired atmosphere) and compression bonded thereto at seal ring metal 318. With the cover 400 installed on chip 100, the electrodes on the top and bottom surfaces of the resonator 100 may be accessed electrically via openings 310 externally of the cover 400.

Resonators 100 and 200 may utilize quartz resonator wafers with a common crystallographic orientation (such as AT-cut) thereby allowing resonators 100 and 200 to be formed using common quartz substrates or wafers and using nearly identical processing procedures. Of course, the details need to differ since the quartz of resonator 200 is likely to be several times thicker than the quartz of resonator 100. Their outline shapes differ as do the placement and configuration of their electrodes.

The foregoing description of the disclosed embodiments and the methods of making same has been presented for the purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise form or methods disclosed. Many modifications and variations are possible in light of the above teachings. It is intended that the scope of the invention be limited not by this detailed description or the concepts set forth above, but rather by the claims appended hereto.