CONDITIONER ASSEMBLY AND POLISHING APPARATUS INCLUDING THE SAME

Description

CROSS-REFERENCE TO RELATED APPLICATION(S)

This U.S. non-provisional application claims priority under 35 USC § 119 to Korean Patent Application No. 10-2024-0060734, filed on May 8, 2024, in the Korean Intellectual Property Office, the disclosure of which is herein incorporated by reference in its entirety.

BACKGROUND

Example embodiments relate to a conditioner assembly and a polishing apparatus including the same.

Chemical mechanical polishing (CMP) may be a process of polishing a substrate, a layer formed on the substrate, or a structure formed on the substrate. Such a polishing process may be referred to as a planarization process.

A polishing apparatus is used as an apparatus for performing such a CMP process. The polishing apparatus may include a polishing pad that is in contact with a surface of an object to be planarized (for example, a substrate) in a state in which a surface of the substrate is exposed. The surface of the substrate may be polished by rotating/vibrating the substrate and/or a polishing pad in a state in which the substrate and the polishing pad are in contact with each other.

However, long-term and repeated use of the polishing pad may diminish polishing effectiveness thereof due to by-products generated during a polishing process. Therefore, the polishing pad needs to be periodically conditioned. As a result, the polishing apparatus requires a conditioner assembly to condition the polishing pad.

SUMMARY OF THE INVENTION

Example embodiments provide a conditioner assembly for significantly reducing defects that may occur due to by-products during a polishing process.

Example embodiments provide a highly reliable polishing apparatus for significantly reducing defects that may occur due to by-products during a polishing process.

According to an example embodiment, a polishing apparatus includes a rotatable platen configured to support a polishing pad, a chemical mechanical polishing (CMP) head configured to hold an object to be processed on the platen, a fluid supply device configured to supply a polishing fluid onto the polishing pad, and a conditioner assembly configured to condition the polishing pad. The conditioner assembly may include a conditioner disk, a disk head including a disk plate coupled to the conditioner disk and a protective wall protruding upwardly from the disk plate. The disk plate and the protective wall are a monolithic structure of polymer resin. A conditioner spindle portion has one end connected to a conditioner arm and an opposite end fastened to the disk head. The protective wall extends peripherally around the conditioner spindle portion and is radially spaced apart from the conditioner spindle portion. A height of the disk head in a vertical direction may be 0.3 to 0.7 times a distance from a lower surface of the disk head to a lower surface of the conditioner arm.

According to an example embodiment, a conditioner assembly for conditioning a polishing pad of a polishing apparatus includes a conditioner disk, a disk head having a disk plate coupled to the conditioner disk and a protective wall protruding upwardly from the disk plate, wherein the disk plate and the protective wall are a monolithic structure of polymer resin. A conditioner spindle portion has one end connected to a conditioner arm and an opposite end fastened to the disk head. The protective wall extends peripherally around the conditioner spindle portion and is radially spaced apart from the conditioner spindle portion. A height of the disk head in a vertical direction may be 0.3 to 0.7 times a distance from a lower surface of the disk head to a lower surface of the conditioner arm.

According to an example embodiment, a conditioner assembly for conditioning a polishing pad of a polishing apparatus, includes a conditioner disk, a disk head having a disk plate coupled to the conditioner disk, and a protective wall protruding upwardly from the disk plate. The disk plate and the protective wall are a monolithic structure of polymer resin. A conditioner spindle portion has one end connected to a conditioner arm and an opposite end fastened to the disk head. The protective wall extends peripherally around the conditioner spindle portion and is radially spaced apart from the conditioner spindle portion. An outer side surface of the protective wall is convexly curved.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a perspective view of a polishing apparatus according to an example embodiment.

FIG. 2 is a schematic cross-sectional view of the polishing apparatus of FIG. 1.

FIG. 3A is a perspective view illustrating a portion of a conditioner assembly according to an example embodiment.

FIG. 3B is a perspective cross-sectional view illustrating a portion of a conditioner assembly according to an example embodiment.

FIG. 3C is a cross-sectional view illustrating a portion of a conditioner assembly according to an example embodiment.

FIG. 4A is a perspective view of a disk head in a conditioner assembly according to example embodiments.

FIG. 4B is an inverted perspective view of the disk head of the conditioner assembly of FIG. 4A according to example embodiments.

FIG. 5A is a perspective cross-sectional view of the disk head illustrated in FIG. 4A.

FIG. 5B is a cross-sectional view of the disk head illustrated in FIG. 4A.

FIG. 6 is a cross-sectional view illustrating a portion of a conditioner assembly according to an example embodiment.

FIG. 7 is a cross-sectional view of a disk head according to an example embodiment.

FIGS. 8A to 8D are cross-sectional views of conditioner disk coupling devices according to example embodiments.

FIG. 9 is a cross-sectional view illustrating a portion of a polishing apparatus according to an example embodiment.

DETAILED DESCRIPTION

Hereinafter, example embodiments will be described with reference to the accompanying drawings.

Example embodiments relate to a polishing apparatus used in a process of manufacturing semiconductor devices. A polishing apparatus is an apparatus for polishing a substrate (for example, a semiconductor wafer) used to manufacture a semiconductor device, or polishing various layers formed on a surface of the substrate. In a polishing process, a substrate to be polished (for example, the substrate, or at least one of the various layers formed on the surface of the substrate) may be placed on a polishing pad. While a polishing fluid is supplied between the substrate to be processed and the polishing pad, the substrate to be processed and the polishing pad may be moved relative to each other to polish a surface of an object to be processed.

FIG. 1 is a perspective view of a polishing apparatus according to an example embodiment, and FIG. 2 is a schematic cross-sectional view of the polishing apparatus of FIG. 1.

Referring to FIGS. 1 and 2, a polishing apparatus 1 according to an example embodiment includes a stage 10 including a polishing pad 13, a CMP assembly 20 placing a substrate to be processed (hereinafter referred to as a “target substrate”) S on the polishing pad 13 and polishing the target substrate S, a conditioner assembly 30 conditioning the polishing pad 13, and a fluid supply device 40 distributing a polishing fluid.

The stage 10 may include a platen 11, a polishing pad 13 mounted on an upper surface of the platen 11, and a driving spindle 15.

The platen 11 may have a plate shape (for example, a circular plate shape) with a flat upper surface.

The platen 11 may be connected to the driving spindle 15, and may rotate around a rotation axis 15x of the driving spindle 15. A drive motor, not illustrated, may be provided at the driving spindle 15 to drive the platen 11, and rotational force may be provided to the platen 11 through the driving spindle 15.

In an example embodiment, the platen 11 may perform motions other than rotational motion, for example, linear motion. For example, the platen 11 may perform rotational motion, linear movement, or a combination thereof. Linear motion may include not only a movement in one direction but also reciprocating motion, and rotational motion may include spinning, revolving, angular rotation, eccentric motion, or combinations thereof.

A polishing pad 13 may be provided on the platen 11. The polishing pad 13 may be used to come into contact with a surface of the target substrate S and polish the surface of the target substrate S.

During the polishing process, the target substrate S may be placed on the polishing pad 13 and may rotate and/or linearly move while in contact with the polishing pad 13.

Sizes (for example, areas) of the polishing pad 13 and the platen 11 placed therebelow may be larger than a size (for example, an area) of the target substrate S.

A material of the polishing pad 13 may vary depending on conditions of a material of a surface to be processed (hereinafter referred to a “target surface”) of the target substrate S or polishing particles. For example, the polishing pad 13 may be formed of a foamed polyurethane-based hard pad, a suede-based soft pad, or a sponge. In addition, the polishing pad 13 may be formed of a material having a hardness or rigidity corresponding to a mechanical hardness or rigidity of the target surface. The polishing pad 13 may also have a multilayer structure including a plurality of stacked pads. In the polishing pad 13 having the multilayer structure, at least a portion of the plurality of stacked pads may have different hardnesses (or rigidities), so that overall hardness or rigidity of the polishing pad 13 may be determined.

In an example embodiment, at least one groove, not illustrated, for improving polishing efficiency of the target substrate S may be formed in an upper surface of the polishing pad 13. The groove may have at least one of various shapes (for example, a concentric circular shape, a radial shape, and a spiral shape). The groove may facilitate uniform supply of a polishing fluid between the polishing pad 13 and the target substrate S, or may facilitate discharge of by-products generated after the polishing process.

The CMP assembly 20 may hold the target substrate S on a lower surface thereof, and may support the target substrate S. The CMP assembly 20 may move the target substrate S such that the target surface of the target substrate S is provided on the upper surface of the polishing pad 13.

The CMP assembly 20 may include a CMP head 23 for holding and supporting the target substrate S, and a CMP spindle 25 connected to the CMP head 23 to be rotatable together with the CMP head 23. A CMP drive motor, not illustrated, for rotating the CMP spindle 25 may be connected to the CMP spindle 25.

The target substrate S may include a substrate requiring polishing treatment, or a substrate on which at least one layer and/or structure requiring polishing treatment is formed. The substrate and the substrate on which at least one layer and/or structure is formed may be used in the manufacturing process of semiconductor devices. For example, the target substrate S may include a semiconductor substrate formed of a semiconductor material, as well as a metal substrate, a glass substrate, a plastic substrate, or the like. The semiconductor substrate may include a semiconductor element such as silicon (Si) or germanium (Ge), or a compound semiconductor such as silicon carbide (SiC), gallium arsenide (GaAs), indium arsenide (InAs), or indium phosphide (InP), but example embodiments are not limited thereto. In addition, the target substrate S may include at least one organic layer, an inorganic layer, an organic-inorganic composite layer, or a metal layer formed on the substrate.

The CMP head 23 may be configured to be movable in a direction, perpendicular to the surface of the polishing pad 13. The CMP spindle 25 may be connected to the CMP head 23 such that the CMP head 23 is rotatable around an axis. The CMP drive motor may provide rotational force to the CMP spindle 25.

The target substrate S may be held on the lower surface of the CMP head 23 by vacuum suction. In a state in which the CMP head 23 holds and supports the target substrate S, the CMP head 23 may rotate around the rotation axis 25x of the CMP spindle 25 while applying pressure to the target substrate S towards the polishing pad 13.

In an example embodiment, the CMP head 23 may perform motions other than the rotational motion. For example, the CMP head 23 may be connected to an arm movable in a radial direction of the platen 11, and may move in the radial direction within a plane of the platen 11. The CMP head 23 and the target substrate S supported on the CMP head 23 may also perform a lateral (horizontal) linear motion, a rotational motion, or a combination of the rotational motion and the linear motion on the upper surface of the polishing pad 13. In an example embodiment, the CMP head 23 may be swept between inner and outer sides of the platen 11 on the upper surface of the polishing pad 13.

In an example embodiment, the platen 11 may perform a rotational motion and/or a linear motion simultaneously with the sweeping of the CMP head 23. Alternatively, the platen 11 may perform a rotational motion and/or a linear motion, separately from the CMP head 23.

The conditioner assembly 30 may be used to condition (for example, clean and/or regenerate) the polishing pad 13 and may perform a process of polishing the surface of the polishing pad 13. The process of conditioning the polishing pad 13 may be performed between polishing processes of the target substrate S using the CMP assembly 20, or may be performed simultaneously with the polishing process of the target substrate S.

The conditioner assembly 30 may include a conditioner disk 37, a disk head 35 coupled to the conditioner disk 37, and a conditioner spindle portion 33 for transmitting rotational force to the conditioner disk 37.

The disk head 35 may be coupled to the conditioner disk 37. The polishing pad 13 may be conditioned by horizontally rotating the conditioner disk 37 on the polishing pad 13 in a state in which the conditioner disk 37 coupled to the disk head 35 is in contact with the polishing pad 13.

The disk head 35 will be described in more detail later with reference to drawings.

The conditioner disk 37 may be mounted on the lower surface of the disk head 35. The conditioner disk 37 may include at least one pad, among various pads that may condition the polishing pad 13.

The conditioner disk 37 may include abrasive elements, for example, abrasive diamond particles fixed on the conditioner disk 37. The conditioner disk 37 may also include at least one composition, among other abrasive compositions in addition to or instated of diamond particles. For example, silicon carbide particles may be used instead of or in addition to the abrasive diamond particles. In an example embodiment, the conditioner disk 37 may also include a fixed brush formed of a polymer resin.

The conditioner spindle portion 33 may be connected to the conditioner arm 31, and the conditioner arm 31 may be connected to the outer spindle 39. For example, one end of the conditioner arm 31 may be connected to the conditioner spindle portion 33, and the other end of the conditioner arm 31 may be connected to the outer spindle 39.

The conditioner arm 31 and the outer spindle 39 may move the disk head 35 and the conditioner disk 37 to an appropriate location on the polishing pad 13. While the polishing pad 13 performs a rotational motion and/or a linear motion, the outer spindle 39 may be used to sweep the conditioner arm 31 around an outer rotation axis 39x to vibrate the conditioner disk 37 between the inner and outer sides of the upper surface of the polishing pad 13.

The conditioner spindle portion 33 may be connected to a lower portion of the conditioner arm 31. An upper end of the conditioner spindle assembly 33 may be connected to a lower portion of the conditioner arm 31, and a lower end of the conditioner spindle portion 33 may be connected to the disk head 35.

A drive motor, not illustrated, that may provide rotational force to the disk head 35 through the conditioner spindle portion 33 may be connected to the conditioner spindle portion 33. The drive motor may rotate the conditioner spindle portion 33 and the conditioner disk 37 around a conditioner rotation axis 33x. Although not illustrated, the drive motor may be installed inside the conditioner arm 31.

A fluid supply device 40 may be provided within the polishing apparatus 1 to supply a polishing fluid, containing polishing particles for polishing the target surface of the target substrate S, to the polishing pad 13.

The polishing fluid may be provided as a slurry composition including polishing particles and a solvent. The size, type, and/or concentration of the polishing particles used in the polishing process may be selected depending on a state of an object to be removed of the target substrate S (for example, a size of an initial step, a thickness of a layer, and/or a material of the layer). The polishing particles may include at least one of, for example, diamond, silicon carbide (SiC), cubic boron nitride (CBN), silicon dioxide (SiO₂), cerium oxide (CeO₂), or aluminum oxide (Al₂O₃).

The fluid supply device 40 may include a supply pipe 41 for supplying the polishing fluid and a fluid supply nozzle 43 provided on one end of the supply pipe 41 to spray the polishing fluid onto the polishing pad 13.

In an example embodiment, the fluid supply nozzle 43 may supply the polishing fluid to a certain fixed location of the polishing pad 13 on the platen 11. In an example embodiment, the fluid supply nozzle 43 is movable on the polishing pad 13 on the platen 11. The movable fluid supply nozzle 43 may supply the polishing fluid to any location of the polishing pad 13 on the platen 11. The fluid supply nozzle 43 may be moved in synchronization with the CMP head 23, and thus the polishing fluid may be efficiently supplied between the target substrate S and the polishing pad 13.

Although not illustrated, the polishing apparatus 1 may further include a cleaning solution supply device supplying a cleaning solution for cleaning the target substrate S and the polishing pad 13 after the polishing process. The cleaning solution may be supplied to the target substrate S and the polishing pad 13 by the cleaning solution supply device to remove polishing particles remaining on the target surface of the target substrate S and the polishing pad 13 and processing products generated by the polishing process. Deionized water (DI water) may be used as a cleaning solution. In addition to the DI water, a chemical may be appropriately supplied as the cleaning solution depending on the type of polishing particles. The cleaning solution supply device may include a cleaning solution nozzle for supplying the cleaning solution to a predetermined location on the polishing pad 13. The cleaning solution nozzle may be moved in a manner, similar to the fluid supply nozzle and may supply the cleaning solution to any location on the polishing pad 13.

In an example embodiment, the polishing apparatus 1 may include a controller 50. The controller 50 may control various driving devices of the polishing apparatus 1 and the opening and closing of a valves of each nozzle 43 to control the operation of the polishing apparatus 1. For example, the controller 50 may include a central processing unit (CPU) processing various types of data, a memory storing various types of data, or the like. The controller 50 may be communicatively connected to the platen 11, the CMP assembly 20, the fluid supply device 40, and the conditioner assembly 30, and may transmit command signals to control the platen 11, the CMP assembly 20, the fluid supply device 40, and the conditioner assembly 30. For example, the controller 50 may drive the conditioner assembly 30 by instructing values of rotational speed and/or rotational torque of the conditioner rotation axis 33x to the conditioner assembly 30. In addition, for example, the controller 50 may drive the platen 11 by instructing the values of the rotational speed and rotational torque of the driving motor to the platen 11.

The polishing apparatus 1 having the above-described structure may polish the target substrate S by supplying a polishing fluid, containing polishing particles, to the polishing pad 13 while rotating the platen 11 and/or the CMP head 23. The polishing pad 13 and the platen 11 may rotate around a rotation axis 15x of the driving spindle 15. The target substrate S may be pressed against the polishing pad 13 by the CMP head 23 and the CMP head 23 may be moved within the plane of the platen 11, so that the target substrate S may be polished.

In the polishing apparatus 1 having the described structure, while rotating each of the platen 11 and the disk head 35, the conditioner disk 37 may be placed on the polishing pad 13 by the disk head 35 and then pressed, and the disk head 35 may be moved within the upper surface of the platen 11 to perform a conditioning process of the polishing pad 13.

For example, the disk head 35 may vertically lower the conditioner disk 37 toward the polishing pad 13 such that a conditioning surface of the conditioner disk 37 may be brought into contact with the polishing surface of the polishing pad 13. The disk head 35 may rotate around the conditioner rotation axis 33x of the conditioner spindle portion 33. The conditioner arm 31 may rotate around the rotation axis 39x of the outer spindle 39 such that the disk head 35 may sweep over a polishing surface of the polishing pad 13 in a reciprocal motion. Through the rotational motion of the conditioner disk 37 and the reciprocal motion of the disk head 35, contaminants on the conditioning surface of the conditioner disk 37 may be removed, and the polishing surface may be polished to be retextured. Thus, the conditioning process of the polishing pad 13 may be performed.

The conditioning process may be performed in the polishing process of the target substrate S, or may be performed after the polishing process of the target substrate S and before a polishing process of a next target substrate S. As a result, a surface condition of the polishing pad 13 may be maintained during the polishing process, and the polishing process may be stabilized.

In an example embodiment, the conditioner assembly 30 may have a structure for effectively blocking permeation of a polishing fluid into the conditioner spindle portion 33. The conditioner assembly 30 will be described in detail below with reference to the drawings.

FIGS. 3A to 3C are diagrams illustrating a portion of the conditioner assembly according to an example embodiment. FIG. 3A is a perspective view, FIG. 3B is a perspective sectional view, and FIG. 3C is a cross-sectional view. FIGS. 4A and 4B are a perspective view and an inverted perspective view of a disk head in a conditioner assembly according to example embodiments, respectively. FIG. 5A is a perspective cross-sectional view and a cross-sectional view of the disk head illustrated in FIG. 4A, respectively.

Referring to FIGS. 3A to 3C, FIGS. 4A and 4B, and FIGS. 5A and 5B, in a conditioner assembly 30, a conditioner disk 37 may be coupled to a disk head 35 and the disk head 35 may be mounted on the conditioner spindle portion 33.

The conditioner spindle portion 33 may include a conditioner spindle 331 providing rotational force to the disk head 35 and a cover 332 surrounding the conditioner spindle 331. The cover 332 may cover all or a portion of the outer surface of the conditioner spindle 331.

An upper end of the conditioner spindle portion 33 may be rotatably mounted on a lower side of the conditioner arm 31. A rotation axis 33x of the conditioner spindle 331 may be perpendicular to a lower surface of the conditioner arm 31.

The conditioner assembly 30 may include mechanisms (for example, driving belts through a drive motor and/or an arm inside the conditioner arm 31) for rotating the disk head 35 and the conditioner disk 37 around the rotation axis 33x of the conditioner spindle 331. In an example embodiment, the disk head 35 and the conditioner disk 37 may rotate at a rotation speed substantially the same as or similar to a rotation speed of the platen 11. Alternatively, in an example embodiment, the disk head 35 and the conditioner disk 37 may rotate at a speed, different from the rotation speed of the platen 11.

The conditioner spindle portion 33 may have a cylindrical shape. A vertical length of the conditioner spindle 331 may be the same as the vertical length of the cover 332, but is not limited thereto. An upper length of the conditioner spindle 331 may also be different from an upper length of the cover 332. In an example embodiment, the conditioner spindle 331 may protrude downward from a lower surface of the cover 332. When the conditioner spindle 331 protrudes from the cover 332, a spindle fastening groove 3513, into which the protruding portion of the conditioner spindle 331 is inserted, may be provided in the disk head 35 coupled to the conditioner spindle 331.

The conditioner arm 31 may rotate within a specific angular range on the platen 11 and the polishing pad 13. Accordingly, the conditioner spindle 331 may spin within the specific angular range on the platen 11 and the polishing pad 13 while rotating.

The disk head 35 may be mounted on a lower side of the conditioner spindle 331.

The disk head 35 may include a conditioner disk coupling device 350 coupled to a conditioner disk 37. The disk head 35 may also include additional components, such as a magnet 353 and a positioning portion (for example, a positioning pin 3541), facilitating coupling of the disk head 35 to the conditioner disk 37.

The conditioner disk coupling device 350 may include a disk plate 351 having a disk shape and a protective wall 352 extending upward from an upper surface of the disc plate 351.

In plan view, the disk plate 351 may have a shape substantially the same as the conditioner disk 37. For example, the disk plate 351 may a shape of a disk having an upper surface 3511 and a lower surface 3512.

A material of the disk head 35 is not limited to a specific material, but may be selected from synthetic resins, or the like. At least a portion of the disk head 35 may be formed of a thermoplastic resin, for example, a semi-crystalline thermoplastic resin. For example, the semi-crystalline thermoplastic resin may include polyetheretherketone (PEEK) or polyphenylene sulfide (PPS).

The upper surface 3511 and/or lower surface 3512 of the disk plate 351 may include a plane, substantially parallel to the polishing pad 13. The upper surface 3511 of the disk plate 351 may be disposed to oppose a lower end of the conditioner spindle 331, and thus may be fastened to the lower end of the conditioner spindle 331. The lower surface 3512 of the disk plate 351 may be coupled to an upper surface of the conditioner disk 37.

The above-described spindle fastening groove 3513 may be provided in the center of the upper surface of the disk plate 351. The spindle fastening groove 3513 may have a shape corresponding to a shape of the lower end of the conditioner spindle 331 such that the lower end of the conditioner spindle 331 may be inserted and mounted. The conditioner spindle 331 may be inserted into the spindle fastening groove 3513 to be fastened thereto, so that the conditioner spindle 331 may be placed at an accurate location on the disk head 35.

The protective wall 352 may be provided on the upper surface of the disk plate 351. The protective wall 352 may protrude upward (for example, in a direction toward the conditioner arm 31) from the upper surface of the disk plate 351. The protective wall 352 may have a cylindrical shape surrounding an outer peripheral surface of the conditioner spindle portion 33 but having an open top. The protective wall 352 may surround the entire outer peripheral surface of the conditioner spindle portion 33, and an inner surface 3522 of the protective wall 352 may be spaced apart from the outer surface of the conditioner spindle portion 33. In an example embodiment, an inner diameter 3522 of the protective wall 352 may be larger than an outer diameter of the conditioner spindle portion 33 such that the conditioner spindle portion 33 may be easily inserted into a cylindrical inner side of the protective wall 352. For example, if the inner diameter of the protective wall 352 is denoted as DI and the outer diameter of the conditioner spindle portion 33 is denoted as D2, then D2≤D1.

The protective wall 352 may block permeation of a polishing fluid into a side of the conditioner spindle portion 33 during the polishing process. The protective wall 352 may prevent the polishing fluid (for example, slurry containing polishing particles) from permeating into the side of the conditioner spindle portion 33. When the polishing apparatus 1 is used for a long period of time, a polishing fluid including by-products of the polishing process may be accumulated and solidified on the conditioner spindle portion 33 and/or in a coupling location of the conditioner spindle portion 33 and the disk head 35. The solidified polishing fluid may interfere with the firm fastening of the conditioner spindle portion 33 and the disk head 35. In addition, the solidified polishing fluid may fall off from an accumulated portion and enter a portion between the polishing pad 13 and the target substrate S to act as a foreign object, causing scratches on the target substrate S. The protective wall 352 may block the permeation of the polishing fluid into the side of the conditioner spindle portion 33 to maintain the firm fastening of the conditioner spindle portion 33 and the disk head 35 and prevent the scratches on the surface of the target substrate S during the polishing process.

In an example embodiment, the protective wall 352 and the disk plate 351 may be integrally formed to be inseparable. For example, the protective wall 352 and the disk plate 351 may be formed as a monolithic structure without an interface therebetween. Accordingly, the disk plate 351 and the protective wall 352 may be simultaneously manufactured from the same material by the same process. The disk plate 351 and the protective wall 352 may be formed of a thermoplastic resin, for example, a semi-crystalline thermoplastic resin. The semi-crystalline thermoplastic resins may include at least one of polyetheretherketone (PEEK) or polyphenylene sulfide (PPS).

Alternatively, when an additional protective wall is formed as a component separated from the disk plate to prevent the permeation of polishing fluid into the conditioner spindle portion 33, a fastening portion coupling the protective wall and the disk plate may be required. For example, at least one screw and at least one fastening hole, into which the screw is fastened, may be used to couple the protective wall and the disk plate. However, when the protective wall and the disk plate are coupled using a screw, the screw may be damaged during a polishing process performed for a long period of time. In addition, a foreign object may be generated by the damage to the screw. Furthermore, polishing fluid may be accumulated and solidified in a region in which the screw and the fastening hole are provided, which is likely to act as another foreign object during the polishing process. Such a foreign object may cause scratches on the target substrate S during the polishing process. In addition, a process of coupling the protective wall 352 and the disk plate 351 using a fastening portion may be required, resulting in a complex process.

According to an example embodiment, the protective wall 352 and the disk plate 351 are formed to be integrated with each other, so that a fastening portion coupling the protective wall 352 and the disk plate 351 is not required. In addition, damage to the fastening portion is unlikely to occur and a foreign object resulting from the damage is also unlikely to be generated. Furthermore, a process of coupling the protective wall 352 and the disk plate 351 is also not required.

In an example embodiment, the protective wall 352 may have a height sufficient to block the permeation of polishing fluid into the conditioner spindle portion 33. The height of the protective wall 352 may be greater than a height of the disk plate 351. For example, if the height of the disk plate 351 is denoted as a first height T1 (see FIG. 9) and the height of the protective wall 352 is denoted as a second height T2 (see FIG. 9), a ratio of the first height T1 to the second height T2 may be 1:2 to 1:4. When the second height T2 is less than twice the first height T1, it may be difficult to sufficiently block the introduction of polishing fluid into a side of the conditioner spindle 331. When the second height T2 is more than four times the first height T1, the protective wall 352 may occupy too much of the space on an upper side of the disk head 35 (for example, a space between the disk head 35 and the conditioner arm 31) to interfering with the operation of other components. However, the heights of the disk plate 351 and the protective wall 352 are not limited thereto, and may vary depending on various factors such as the diameter and/or rotational speed of the disk plate 351, and/or the viscosity of the polishing fluid, without departing from the concept of the present disclosure.

A lower surface 3512 of the disk plate 351 may oppose the conditioner disk 37, and the disk plate 351 and the conditioner disk 37 may be coupled to each other. The lower surface 3512 of the disk head 35 may have a shape of a substantially horizontal plane. At least one step portion 3517 may extend outwardly from the lower surface 3512 of the disk head 35, and may be positioned radially inward from an edge of the lower surface 3512 of the disk head 35, as illustrated in FIG. 4B and FIG. 5A. An upper surface of the conditioner disk 37, opposing the lower surface 3512 of the disk head 35, may have a corresponding shape that interlocks with the step portion 3517.

The step portion 3517 may be provided for a positioning function allowing the disk head 35 and the conditioner disk 37 to interlock with each other at a precise location when the disk head 35 and the conditioner disk 37 are coupled to each other. The step portion 3517 may be provided along a periphery of the lower surface 3512 of the disk head 35. Accordingly, the step portion 3517 may determine a location of the conditioner disk 37 when the disk head 35 and the conditioner disk 37 are coupled to each other, and may prevent the conditioner disk 37 from being misaligned by centrifugal force during rotation of the conditioner disk 37.

In an example embodiment, at least one positioning groove 3542 for positioning the conditioner disk 37 may be provided within the edge of the lower surface 3512 of the disk plate 351. The positioning groove 3542 may have a shape recessed from the edge of the lower surface 3512 of the disk plate 351. A positioning pin 3541 may be pressed inwardly of the positioning groove 3542. In an example embodiment, when the positioning pin 3541 is placed in the positioning groove 3542, an adhesive may be provided between an inner surface of the positioning groove 3542 and the positioning pin 3541. The positioning pin 3541 may have a height, greater than a depth of the recess of the positioning groove 3542. After the positioning pin 3541 is inserted into the positioning groove 3542, a portion of the positioning pin 3541 may protrude from the lower surface 3512 of the disk plate 351.

The conditioner disk 37 may have a recess corresponding to the protruding portion of the positioning pin 3541. For example, the upper surface of the conditioner disk 37 may have an uneven shape corresponding to the positioning pin 3541, so that the positioning pin 3541 protruding from the lower surface 3512 of the disk plate 351 may be fastened (for example, fitted) to the corresponding recess. Sizes and shapes of the positioning pin 3541 and the recess may be set such that the positioning pin 3541 and the recess may be fastened without any gap therebetween. Accordingly, the positioning pin 3541 may be fitted into the recess formed in the conditioner disk 37 to fasten the disk head 35 and the conditioner disk 37 to each other.

The positioning pin 3541 may also function as a torque transmission portion. The torque transmission portion may efficiently transmit a torque of a rotation axis 33x of the conditioner spindle 331 to the conditioner disk 37 from the disk head 35. In the present embodiment, the positioning pin 3541 may function as a torque transmission portion, but example embodiments are not limited thereto. In an example embodiment, an additional torque transmission portion having a protrusion shape may be further formed on the lower surface 3512 of the disk plate 351.

In an example embodiment, the positioning grooves 3542 and the positioning pins 3541 inserted into the positioning grooves 3542 may be provided in plural to effectively fasten the disk head 35 and the conditioner disk 37. For example, four or more positioning grooves 3542 and four or more positioning pins 3541 may be provided. In an example embodiment, when the positioning groove 3542 and the positioning pin 3541 are provided in plural, the plurality of positioning grooves 3542 and the plurality of positioning pins 3541 may be disposed in the form of rotational symmetry about a center of rotation of the disk head 35 (e.g., the plurality of positioning grooves 3542 and the plurality of positioning pins 3541 may be circumferentially spaced apart equidistantly around the center of rotation of the disk head 35. Alternatively, the plurality of positioning grooves 3542 and the plurality of positioning pins 3541 may be disposed in at least one pair (for example, two or more pairs) in the form of point symmetry about the center of rotation. The positioning grooves 3542 and the positioning pins 3541 inserted into the positioning grooves 3542 may be disposed in the form of rotational symmetrical or point symmetry to prevent stress, applied to the positioning pins 3541 during rotation of the disk head 35 and the conditioner disk 37, from being concentrated in a specific location. According to the present embodiment, the stress generated during rotation of the disk head 35 and the conditioner disk 37 may be distributed to the plurality of positioning pins 3541, so that removal of the conditioner disk 37 from a specific location may be reduced to implement stable rotation of the conditioner disk 37.

In the present embodiment, both the positioning grooves 3542 and the positioning pins 3541 inserted into the positioning grooves 3542 are illustrated as being formed on an edge side of the lower surface 3512 of the disk head 35, but example embodiments are not limited thereto. The positioning grooves 3542 and the positioning pins 3541 may be formed in other regions, as necessary.

In an example embodiment, the positioning pins 3541 may be manufactured separately and inserted into the positioning grooves 3542, but example embodiments are not limited thereto. In an example embodiment, the disk head 35 and the positioning pins 3541 may be formed as a monolithic structure and are inseparable. For example, the disk head 35 and the positioning pins 3541 may be provided integrally without an interface therebetween. In the present embodiment, the positioning grooves 3542 may be omitted.

In an example embodiment, screw holes 3516 and 333 penetrating through a portion of the disk plate 351 and the conditioner spindle portion 33 may be provided to effectively couple the disk head 35 and the conditioner spindle portion 33. The screw holes 3516 and 333 may penetrate through the upper surface 3511 and the lower surface 3512 of the disk plate 351. The screw holes 3526 and 333 may include a first screw hole 3516, penetrating through the disk plate 351, and a second screw hole 333 extending inwardly of the cover 332 of the conditioner spindle portion 33 from the first screw hole 3516. The first screw hole 3516 and the second screw hole 333 may be connected to each other, and diameters of the first screw hole 3516 and the second screw hole 333 may be the same or different from each other. A single screw 3551 may be provided in the first and second screw holes 3516 and 333 connected to each other, and the conditioner disk coupling device 350 may be coupled to the conditioner spindle portion 33 by the screw 3551 and the screw holes 3516 and 333.

The screw 3551 may be provided in singular or plural. For example, four or more screws 3551 may be provided. Each screw 3551 may have a length, greater than a first height T1 of the disk plate 351 and may extend inwardly of the conditioner spindle portion 33 through the disk plate 351.

In an example embodiment, when the screw 3551 is provided in plural, the screw hole 3516 and 333 may also be provided in plural, and the number of screw holes 3516 and 33 may be the same as the number of screws 3551. The plurality of screws 3551 and the plurality of screw holes 3516 and 333 may be disposed in the form of rotational symmetry about a rotation axis 33x of the conditioner spindle 331 (e.g., the plurality of screws 3551 and the plurality of screw holes 3516 and 333 may be circumferentially spaced apart equidistantly around the rotation axis 33x of the conditioner spindle 331). Alternatively, the screws 3551 and the screw holes 3516 and 333 may be disposed in at least one pair, for example, two pairs, in the form of point symmetry about the center of rotation. The screws 3551 and the screw holes 3516 and 333 may be disposed in the form of rotational symmetry or point symmetry, so that stresses applied to the screws 3551 during rotation of the conditioner spindle 331 may be the same. Accordingly, loosening of specific screws 3551 may be reduced, and the stress may be uniformly distributed overall to implement stable rotation of the conditioner spindle portion 33 and the disk head 35.

An upper surface of the conditioner disk 37, opposing a lower surface 3512 of the disk head 35 (for example, the disk plate 351), may have a shape that interlocks with the lower surface 3512 of the disk head 35.

In an example embodiment, although not illustrated, the conditioner assembly 30 may include mechanisms (for example, pneumatic or mechanical actuators inside the disk head 35) for adjusting a pressure (for example, down-force) between the conditioner disk 37 and the polishing pad 13. For example, the conditioner assembly 30 may include a down-force actuator to adjust the pressure of the conditioner disk 37 on the polishing pad 13. The down-force actuator may be disposed between the conditioner arm 31 and the conditioner spindle portion 33 or in another appropriate location. For example, the down-force actuator may be connected to the conditioner spindle portion 33 to control the force applied to the conditioner disk 37 relative to a polishing surface of the polishing pad 13. The down-force actuator may include various pneumatic cylinders, bladders, solenoids, or other similar devices to control pressure.

In an example embodiment, the disk head 35 may include mechanisms (for example, mechanical attachment systems such as magnetic attachment systems using bolts or screws, or magnet) for attaching the conditioner disk 37 to the disk head 35. For example, the disk head 35 and the conditioner disk 37 may be magnetically coupled to each other by magnetic force by a magnet 353.

When the disk head 35 and the conditioner disk 37 are coupled to each other by the magnet 353, the magnet 353 may be embedded in the disk head 35 and the conditioner disk 37 may be formed to include a magnetic metal. For example, a portion of the conditioner disk 37 may be formed of a magnetic metal, such as stainless steel.

A magnet mounting groove 3531 may be provided in the lower surface 3512 of the disk head 35 to mount the magnet 353. The magnet mounting groove 3531 may be recessed from the lower surface 3512 of the disk head 35 to a specific depth. The magnet 353 is accommodated in the magnet mounting groove 3531, and the depth of the recess of the magnet mounting groove 3531 may be greater than a thickness of the magnet 353. A magnet cover 3532 may be provided above the magnet 353 accommodated in the magnet mounting groove 3531. In the present embodiment, the magnet cover 3532 may be provided to protect the magnet 353, and may prevent damage to the magnet 353 during the polishing process.

The magnet 353 has a shape and a size corresponding to those of the magnet mounting groove 3531, and may be securely inserted into the magnet mounting groove 3531 to be fastened thereto. In plan view, the magnet cover 3532 may have a shape and a size corresponding to those of the magnet mounting groove 3531, and thus may be securely pressed and fastened within the magnet mounting groove 3531. In an example embodiment, when the magnet 353 is disposed in the magnet mounting groove 3531, an adhesive may be provided between the inner surface of the magnet mounting groove 3531 and the magnet 353, and/or between the magnet 353 and the magnet cover 3532.

In an example embodiment, an inner side surface of the magnet mounting groove 3531 may have at least one step corresponding to sizes and/or shapes of the magnet 353 and the magnet cover 3532. For example, when the magnet 353 and the magnet cover 3532 have different diameters, a step may be formed on the inner side surface of the magnet mounting groove 3531 such that the magnet mounting groove 3531 has diameters corresponding to diameters of the magnet 353 and the magnet cover 3532 depending on the depth.

In an example embodiment, in plan view, the magnet mounting groove 3531 may be provided in the center of rotation of the disk head 35 and may be provided in a location overlapping the conditioner spindle 331. In addition, in plan view, the magnet mounting groove 3531 may be provided in a location overlapping the spindle mounting recess 3513 formed in the upper surface 3511 of the disk plate 351. In an example embodiment, the magnet mounting groove 3531 and the spindle mounting recess 3513 may meet each other and penetrate through an upper surface 3511 and a lower surface 3512 of the disk plate 351 of the disk head 35. In plan view, the magnet mounting groove 3531 and the spindle mounting recess 3513 may have the same shape and the same size, or may have different shapes and/or different sizes. However, when the magnet mounting groove 3531 and the spindle mounting recess 3513 penetrate through the disk plate 351, a planar shape or a planar size of the magnet mounting groove 3531 may differ from a planar shape or a planar size of the spindle mounting recess 3513 to securely fix the conditioner spindle 331 and the magnet 353.

The conditioner disk 37 may be provided to be removable from the disk head 35. A removal recess 356 may be provided within the lower surface 3512 of the disk plate 351 to easily remove the conditioner disk 37 from the disk head 35. The removal recess 356 may have a shape recessed from the lower surface 3512 of the disk plate 351 to provide a separation space between the lower surface 3512 of the disk plate 351 and the upper surface of the conditioner disk 37. The removal recess 356 may be provided in the edge of the lower surface 3512 of the disk plate 351, and a separation space defined by the removal recess 356 may be open towards a side surface of the disk plate 351. According to an example embodiment, a force may be applied to at least one of the lower surface 3512 of the disk plate 351 and the upper surface of the conditioner disk 37 using the separation space, provided by the removal recess 356, to easily remove the disk plate 351 and the conditioner disk 37 (i.e., to separate the conditioner disk 37 from the disk plate 351).

The removal recess 356 may be provided in singular or plural. When the removal recess 356 is provided in plural, the plurality of removal recesses 356 may be disposed in the form of rotational symmetry about the center of rotation of the disk head 35. For example, the plurality of removal recesses 356 may be circumferentially spaced apart equidistantly around the center of rotation of the disk head 35. Alternatively, the plurality of removal recesses 356 may be disposed in at least one pair, for example, two pairs or more, in the form of point symmetry about the center of rotation.

In an example embodiment, the removal recess 356 has been described as being formed in the lower surface 3512 of the disk plate 351, but example embodiments are not limited thereto. In an example embodiment, the removal recess 356 may be provided in the upper surface of the conditioner disk 37. Alternatively, the removal recess 356 may be provided in both the lower surface 3512 of the disk plate 351 and the upper surface of the conditioner disk 37.

Although not illustrated, the disk head 35 and the conditioner disk 37 may be coupled by a different type of fastening method from the above-described example. For example, the disk head 35 and the conditioner disk 37 may be coupled to each other using pins, screws, or bolts. Alternatively, an opening may be formed in the lower surface 3512 of the disk plate 351 opposing the conditioner disk 37, and the conditioner disk 37 may be mounted on the disk head 35 in a manner of air intake through the opening.

In an example embodiment, a mounting location of the magnet may be changed to improve the coupling strength when the disk head and the conditioner disk are coupled to each other. FIG. 6 is a cross-sectional view illustrating a portion of a conditioner assembly according to an example embodiment.

Referring to FIG. 6, according to an example embodiment, the magnet cover 3532 on the magnet 353 may be omitted to significantly reduce a distance between the magnet 353 of the disk head 35 and the conditioner disk 37. For example, a surface of the magnet 353 may be exposed to the outside on the lower surface 3512 of the disk head 35. The magnet 353 of the disk head 35 and the conditioner disk 37 may be in contact with each other.

In an example embodiment, an exposed surface of the magnet 353 may be substantially coplanar with the lower surface 3512 of the conditioner head to significantly reduce a gap between the magnet 353 of the disk head 35 and the conditioner disk 37. However, example embodiments are not limited thereto and, in some embodiments, the exposed surface of the magnet 353 may be recessed from or protrude from the lower surface 3512 of the conditioner head. An upper surface of the conditioner disk 37 may have a shape that interlocks with the lower surface 3512 of the disk head 35 including the magnet 353.

As illustrated in the drawing, when the magnet 353 is directly exposed on the lower surface 3512, the distance between the magnet 353 and the conditioner disk 37 may be significantly reduced to increase the coupling strength between the magnet 353 of the disk head 35 and the conditioner disk 37.

In an example embodiment, the configuration for positioning the conditioner disk when the disk plate of the disk head and the conditioner disk are coupled to each other may be different from that in the above-described embodiments.

FIG. 7 is a cross-sectional view of the disk head, illustrated in FIG. 4A, in the conditioner assembly according to an example embodiment, and illustrates that a positioning portion is formed to differ from that in the above-described embodiment.

Referring to FIG. 7, at least one positioning projection 3543 may be provided on the lower surface 3512 of the disk plate 351 to position the conditioner disk 37. The positioning projection 3543 may have a shape protruding from the lower surface 3512 of the disk plate 351. The positioning projection 3543 may protrude from the disk plate 351 by a specific height (i.e., the projection 3543 may extend outwardly from the lower surface 3512 of the disk plate 351 by a predetermined distance).

In an example embodiment, the positioning projection 3543 may be provided in plural to effectively couple the disk head 35 and the conditioner disk 37. For example, four or more positioning projections 3543 may be provided. In an example embodiment, when a plurality of positioning projections 3543 are provided, the plurality of positioning projections 3543 may be disposed in the form of rotational symmetry about the center of rotation of the disk head 35 (e.g., the plurality of positioning projections 3543 are circumferentially spaced apart equidistantly around the center of rotation of the disk head 35). Alternatively, the plurality of positioning projections 3543 may be disposed in at least one pair, for example, two pairs or more, in the form of point symmetry about the center of rotation. The positioning projections 3543 may be disposed in the form of rotational symmetry or point symmetry to prevent stress, applied to the disk head 35 and the conditioner disk 37 when the conditioner disk 37 rotates, from being concentrated in a specific location. For example, the stress may be distributed to the plurality of positioning projections 3543 and a plurality of recesses of the conditioner disk 37 corresponding to the plurality of positioning projections 3543. Due to the distribution of the stress, removal of the conditioner disk 37 from the specific location may be reduced to implement stable rotation of the conditioner disk 37.

In an example embodiment, the positioning projections 3543 and the disk plate 351 may be formed integrally to be inseparable (i.e., the positioning projections 3543 and the disk plate 351 are formed as a monolithic structure). When the positioning projections 3543 and the disk plate 351 are formed integrally, the positioning recesses 3542 may be omitted to simplify an assembling process of the disk head 35 and the conditioner disk 37.

The polishing apparatus may be modified in various ways without departing from the concept of the present disclosure. In an example embodiment, the disk head may be provided in a form different from that in the above-described embodiment. For example, the protective wall of the disk head may have various shapes to prevent the permeation of polishing fluid into the conditioner spindle. A shape of the protective wall, for example, a shape of an outer side of the protective wall, may be changed depending on a rotation speed of the disk head, a position in which the polishing fluid is injected during a polishing process, the type of polishing fluid, physical properties of the polishing fluid including viscosity, or the like.

FIGS. 8A to 8D are cross-sectional views of conditioner disk coupling devices according to example embodiments.

Referring to FIG. 8A, the protective wall 352 may have an outer side surface 3521 extending upward from an outer side surface of the disk plate 351. For example, the outer side surface 3521 of the protective wall 352 may be coplanar with the outer side surface of the disk plate 351. The outer side surface 3521 and an inner side surface 3522 of the protective wall 352 may be provided to be perpendicular to an upper surface of the polishing pad 13. For example, an angle formed by the outer side surface 3521 and the inner side surface 3522 of the protective wall 352, and the upper surface of the polishing pad 13 may be 90 degrees) (90°.

According to the present embodiment, there may be no step between the outer side surface 3521 of the protective wall 352 and the outer side surface of the disk plate 351, and the outer side surface 3521 of the protective wall 352 may be perpendicular to the upper surface of the polishing pad 13. Accordingly, the polishing fluid may easily flow downward from the outer side surface 3521 of the protective wall 352. Since there is no step between the protective wall 352 and the disk plate 351, the polishing fluid may not be accumulated at a boundary between the outer side surface 3521 of the protective wall 352 and the outer side surface of the disk plate 351.

Referring to FIG. 8B, the outer side surface 3521 of the protective wall 352 may be provided to be inclined relative to the upper surface 3511 of the disk plate 351. An inner side surface 3522 of the protective wall 352 may be provided to be perpendicular to the upper surface of the polishing pad 13.

In the present embodiment, an angle θ between the outer side surface 3521 of the protective wall 352 and the upper surface 3511 of the disk plate 351 may have a value greater than 0° and less than 90°. In the case in which the outer side surface 3521 of the protective wall 352 has a shape inclined relative to the upper surface 3511 of the disk plate 351, the polishing fluid may easily flow downward along an inclined surface even when the polishing fluid is provided to the protective wall 352 during a polishing process. In the present embodiment, the upper surface of the protective wall 352 parallel to the upper surface of the polishing pad 13 may be absent or be significantly reduced (i.e., the tapered outer side surface 3521 and the inner side surface 3522 result in an upper surface of the protective wall 352 having a much smaller area than would be the case if the outer side surface 3521 and the inner side surface 3522 were parallel). Accordingly, the accumulation of the polishing fluid on the upper surface of the protective wall 352 may be reduced or prevented.

Referring to FIG. 8C, the outer side surface 3521 of the protective wall 352 may have a plurality of surfaces inclined at different angles relative to the upper surface 3511 of the disk plate 351. For example, the outer side surface 3521 of the protective wall 352 may have a first surface 3521a having a first angle and a second surface 3521b having a second angle relative to the upper surface 3511 of the disk plate 351. In the present disclosure, if the first angle is denoted by θ1 and the second angle are denoted by θ2, then 0°<θ1<90° and 0°<θ2<90° may be satisfied. The first angle θ1 of the first surface 3521a and the second angle θ2 of the second surface 3521b may have different values. For example, the first angle θ1 may be smaller than the second angle θ2. Alternatively, the second angle θ2 may be smaller than the first angle θ1. The inner side surface 3522 of the protective wall 352 may be provided to be perpendicular to the upper surface of the polishing pad 13.

According to the present embodiment, an angle of inclination of the outer side surface 3521 of the protective wall 352 may be adjusted in various ways, so that the polishing fluid may easily flow downward. In addition, the angle of inclination of the outer side surface 3521 of the protective wall 352 may be changed in various ways, so that scattering degree and/or scattering angle(s) of the polishing fluid may be controlled depending on a rotation speed of the disk head 35, viscosity and/or components of the polishing fluid.

In the present embodiment, the outer side surface 3521 of the protective wall 352 includes two surfaces having different angles relative to the upper surface 3511 of the disk plate 351, but example embodiments are not limited thereto. In some embodiments, the outer side surface 3521 of the protective wall 352 may include three or more surfaces having different angles.

Referring to FIG. 8D, the outer side surface 3521 of the protective wall 352 may have a curved side when viewed in cross-section. For example, the outer side surface 3521 of the protective wall 352 may be a curved surface (e.g., a convexly curved surface). The curved surface may have the same radius of curvature in a direction away from the disk plate 351, but example embodiments are not limited thereto. In some embodiments, the radius of curvature may vary depending on a location. For example, a radius of curvature of a location, relatively close to the disk plate 351, may be larger than a radius of curvature of a location, relatively distant from the disk plate 351.

According to the present embodiment, a shape of the outer side surface 3521 of the protective wall 352 may be formed into various curved surfaces, so that the polishing fluid may easily flow downward. In addition, a radius of curvature of the outer side surface 3521 of the protective wall 352 may be changed in various ways, so that scattering degree and/or scattering angle(s) of the polishing fluid may be controlled according to a rotation speed of the disk head 35, the viscosity and/or components of the polishing fluid.

In an example embodiment, the shape of the protective wall is not limited to the above-described shapes and may be modified in various ways without departing from the concept of the present disclosure. For example, the outer side surface of the protective wall may be provided in a combination form of the above-described embodiments.

In an example embodiment, the arrangement of the conditioner assembly and the fluid supply device may satisfy a specific condition depending on the operating range of the conditioner assembly and the fluid supply device.

FIG. 9 is a cross-sectional view illustrating a portion of a polishing apparatus according to an example embodiment, and is a schematic cross-sectional view illustrating a stage 10, a CMP assembly 20, a conditioner assembly 30, and a fluid supply device 40.

Referring to FIG. 9, the fluid supply device 40, upwardly spaced from an upper surface of a polishing pad 13, may be provided on the polishing pad 13 provided on a platen 11. A fluid supply nozzle 43 of the fluid supply device 40 may be provided at a first separation distance d1 from the upper surface of the polishing pad 13 to supply a polishing fluid to the upper surface of the polishing pad 13.

In an example embodiment, the first separation distance d1 may be set in consideration of the type of the polishing fluid, viscosity of the polishing fluid, a rotation speed of the platen 11, or the like.

A height of the disk head 35 may be set in consideration of a distance d2 from the upper surface of the polishing pad 13 to the lower surface of the conditioner arm 31. Since the protective wall 352 of the disk head 35 has a cylindrical shape surrounding the periphery of the conditioner spindle portion 33, a size of a space between the disk head 35 and the conditioner arm 31 may vary depending on a height of the protective wall 352. When the space between the disk head 35 and the conditioner arm 31 is narrow, a horizontal and/or vertical movement range of the fluid supply device 40 may be restricted. In the present disclosure, the height of the disk head 35 (for example, the height of the protective wall 352) may be determined to be a height that prevents the polishing fluid from permeating into the conditioner spindle portion 33 while securing a horizontal and/or vertical movement range of the fluid supply device 40.

In the present disclosure, the height of the disk head 35 may vary depending on a height of the fluid supply nozzle 43 of the fluid supply device 40 from the polishing pad 13, for example, the first separation distance d1. For example, if a vertical height of the disk plate 351 is denoted as a first height T1 and a vertical height of the protective wall 352 is denoted as a second height T2, the height of the disk head 35 may be a third height T3, the sum of the first height T1 and the second height T2. In an example embodiment, the height of the disk head 35 (for example, the third height T3) may be provided as three to seven times, or four to six times, or five times the first separation distance d1.

The polishing fluid may be supplied from the fluid supply device 40 to the polishing pad 13, and a scattering distance of the polishing fluid on the polishing pad 13 may vary depending on the type of polishing fluid and/or a rotation speed of the platen 11. In the present disclosure, the protective wall 352 of the disk head 35 may have a sufficient height as described above, in consideration of the scattering distance of the polishing fluid. As a result, the permeation of the polishing fluid into the conditioner spindle portion 33 may be significantly reduced or be prevented. The rotation speed of the platen 11 may be about 50 RPM to 200 RPM, or about 60 RPM to 180 RPM, or about 80 RPM to 140 RPM, but example embodiments are not limited thereto.

In the present embodiment, the height of the disk head 35, for example, the third height T3, may be about 0.3 to 0.7 times a distance between the lower surface of the disk head 35 and the lower surface of the conditioner arm 31 (referred to as a “second separation distance d2”). Alternatively, the third height T3 may be about 0.4 to 0.6 times the second separation distance d2, or about 0.5 times the second separation distance d2. When the third height T3 is greater than a maximum value of the above-mentioned range, the protective wall 352 of the disk head 35 may interfere with the movement of the fluid supply device 40 and/or the CMP assembly 20. When the third height T3 is smaller than a minimum value of the above-mentioned range, the protective wall 352 may have a height that is insufficient to effectively block the permeation of the polishing fluid into a coupling portion of the conditioner spindle portion 33 and the disk head 35. A ratio of the first height T1 to the second height T2 may be 1:2 to 1:4, as described above.

In the present embodiment, the height of the conditioner disk 37 may be smaller than the height of the disk plate 351, for example, the first height T1. In an example embodiment, the height of the conditioner disk 37 may be about 0.3 to 0.7 times, or about 0.4 to 0.6 times, or about 0.5 times the first height T1. However, the height of the conditioner disk 37 is not limited thereto and may be changed in various ways.

As described above, the polishing apparatus according to an example embodiment may employ a disk head with a protective wall to significantly reduce or block the permeation of polishing fluid into a conditioner spindle portion. In addition, the disk head does not include an additional fastening structure for assembling the protective wall, thereby preventing break defects of the fastening structure caused by accumulation and solidification of by-products. Accordingly, the polishing apparatus according to example embodiments may prevent scratch defects while significantly reducing particle generation caused by by-products of a polishing process even during long-term use of the polishing apparatus.

The above-described polishing apparatus may constitute a planarization apparatus together with a loading/unloading device, a cleaning device, a drying device, or the like. The loading/unloading device, the polishing apparatus, the cleaning device, the drying device, or the like, may be connected to a controller, and various operations thereof may be controlled by the controller. The planarization apparatus may include a single polishing apparatus or a plurality of polishing apparatuses. A substrate to be processed may be transferred to the loading/unloading device, the polishing apparatus, the cleaning device, the drying device, or the like, by a transfer device to implement planarization. A planarization process of polishing the substrate to be processed may be performed efficiently and non-stop using the above-described planarization apparatus.

As set forth above, a conditioner assembly according to an example embodiment may significantly reduce defects that may occur due to by-products during a polishing process.

In addition, defects that may occur due to by-products during a polishing process may be significantly reduced to improve the reliability of a polishing apparatus.

While example embodiments have been shown and described above, it will be apparent to those skilled in the art that modifications and variations could be made without departing from the scope of the present inventive concept as defined by the appended claims.