Surgical stapling apparatus

A loading unit for use with a surgical stapling apparatus is provided and includes a tool assembly having a cartridge assembly and an anvil assembly that are movable in relation to one another; a surgical buttress releasably secured to a tissue contacting surface of the anvil assembly and/or the cartridge assembly, wherein each surgical buttress is secured to the anvil assembly and/or the cartridge assembly by at least one anchor; a release assembly associated with the anvil assembly and/or the cartridge assembly; and a drive assembly slidably translatable through the tool assembly between proximal and distal positions, wherein the drive assembly actuates the release assembly to thereby release the anchor to free the surgical buttress from the anvil assembly and/or the cartridge assembly.

Universal medical system

A system for operating third party proprietary software on a medical monitoring device operating native proprietary software and a system for obtaining compatible third party proprietary software for operation on the monitoring device.

Adaptive over-provisioning in memory systems

A method for data storage includes, in a memory that includes multiple memory blocks, specifying at a first time a first over-provisioning overhead, and storing data in the memory while retaining in the memory blocks memory areas, which do not hold valid data and whose aggregated size is at least commensurate with the specified first over-provisioning overhead. Portions of the data from one or more previously-programmed memory blocks containing one or more of the retained memory areas are compacted. At a second time subsequent to the first time, a second over-provisioning overhead, different from the first over-provisioning overhead, is specified, and data storage and data portion compaction is continued while complying with the second over-provisioning overhead.

Method of depositing thin film

A method for forming a silicon germanium oxide thin film on a substrate in a reaction space may be performed using an atomic layer deposition (ALD) process. The process may include at least one cycle comprising a germanium oxide deposition sub-cycle and a silicon oxide deposition sub-cycle. The germanium oxide deposition sub-cycle may include contacting the substrate with a germanium reactant, removing excess germanium reactant, and contacting the substrate with a first oxygen reactant. The silicon oxide deposition sub-cycle may include contacting the substrate with a silicon reactant, removing excess silicon reactant, and contacting the substrate with a second oxygen reactant. The films of the present disclosure exhibit desirable etch rates relative to thermal oxide. Depending on the films' composition, the etch rates may be higher or lower than the etch rates of thermal oxide.

NON-INVASIVE MEASUREMENT OF ANALYTES

This invention provides devices, compositions and methods for determining the concentration of one or more metabolites or analytes in a biological sample, including cells, tissues, organs, organisms, and biological fluids. In particular, this invention provides materials, apparatuses, and methods for several non-invasive techniques for the determination of in vivo blood glucose concentration levels based upon the in vivo measurement of one or more biologically active molecules found in skin.

MULTI-STREAM SENSOR FOR NONINVASIVE MEASUREMENT OF BLOOD CONSTITUENTS

The present disclosure relates to a sensor having a set of photodetectors that are arranged at various locations to enable the measurement of blood glucose. The photodetectors are arranged across multiple locations. For example, the detector may comprise multiple photodetector arrays that are arranged to have a sufficient difference in mean path length to allow for noise cancellation and noise reduction. Walls may be used in the detector to separate individual photodetectors and prevent mixing of detected optical radiation between the different locations on the measurement site. A window may also be employed to facilitate the passing of optical radiation at various wavelengths for measuring glucose in the tissue.

Heat treatment apparatus

Provided is a heat treatment apparatus, which includes: a cylindrical quartz reaction tube having a furnace opening and a bottom flange at a lower portion thereof; a flange holding part configured to hold the bottom flange of the reaction tube; and a lid including a metal lid and a quartz lid supported by the metal lid, the quartz lid being configured to close the furnace opening of the reaction tube. The quartz lid is fixed onto the metal lid by a support ring. The support ring is brought into contact with a bottom surface of the flange holding part so that a gap is defined between the quartz lid and the bottom flange. A sealing member is arranged outward from the gap in a radial direction.

Methods for depositing fluorine/carbon-free conformal tungsten

Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.

UV Irradiation Apparatus with Cleaning Mechanism and Method for Cleaning UV Irradiation Apparatus

A UV irradiation apparatus for processing a semiconductor substrate includes: a UV lamp unit; a reaction chamber disposed under the UV lamp unit; a gas ring with nozzles serving as a first electrode between the UV lamp unit and the reaction chamber; a transmission window supported by the gas ring; an RF shield which covers a surface of the transmission window facing the UV lamp unit; a second electrode disposed in the reaction chamber for generating a plasma between the first and second electrodes; and an RF power source for supplying RF power to one of the first or second electrode.

Flat SiC semiconductor substrate

Methods for manufacturing silicon carbide wafers having superior specifications for bow, warp, total thickness variation (TTV), local thickness variation (LTV), and site front side least squares focal plane range (SFQR). The resulting SiC wafer has a mirror-like surface that is fit for epitaxial deposition of SiC. The specifications for bow, warp, total thickness variation (TTV), local thickness variation (LTV), and site front side least squares focal plane range (SFQR) of the wafer are preserved following the addition of the epitaxy layer.