Surgical fastener applying apparatus

A surgical fastener applying apparatus for applying fasteners to body tissue. The apparatus includes an anvil half-section having a distal anvil portion and a proximal handle portion and a cartridge receiving half-section having an elongated channel member. A firing assembly is releasably supported in the cartridge half-section and includes a locking member. A clamping lever having an engagement member engages a latch portion of the locking member to releasably retain the clamping lever in a clamped position.

Surgical stapling apparatus

A surgical stapling apparatus (stapler) is provided. The stapler includes a housing, elongated member, and a reload. A cartridge is configured to selectively couple to a first jaw member of the reload and includes one or more resilient members thereon. An anvil operably supported on a second jaw member of the reload is configured to compress one or more fasteners ejected from the cartridge. The anvil includes one or more locking members thereon. A knife is configured to translate through the cartridge and anvil when the first and second jaw members are in a closed configuration. Engagement between the knife and the resilient member(s) causes the resilient member(s) to move from an initial configuration that allows the knife to travel distally past the locking member(s) to a final configuration that allows the locking member(s) to engage the knife.

Transmission medium and communication interfaces and methods for use therewith

Aspects of the subject disclosure may include, for example, a system for receiving first electromagnetic waves via a transmission medium without utilizing an electrical return path, and inducing second electromagnetic waves at an interface of the transmission medium without the electrical return path. In an embodiment, the first and second electromagnetic waves have a non-optical frequency range. Other embodiments are disclosed.

Method and apparatus for configuring a communication interface

Aspects of the subject disclosure may include, for example, a system for exchanging electrical signals and guided electromagnetic waves between customer premises equipment and service provider equipment to provide uplink and/or downlink communication services. Other embodiments are disclosed.

Technique to deposit sidewall passivation for high aspect ratio cylinder etch

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reactants having low sticking coefficients in some embodiments. The protective coating may also be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. In some cases the protective coating is deposited using plasma assisted atomic layer deposition or plasma assisted chemical vapor deposition.

Integrated hazard risk management and mitigation system

A system for hazard mitigation in a structure including a subsystem coupled to a circuit of an electrical distribution system and set of nodes. The nodes monitor operating conditions of the circuit and generate data in response. A data processing system is operable to process the data generated by the set of nodes and in response identify a trigger representing a condition requiring that an action be taken. The data processing system processes the trigger in accordance with a predetermined policy to initiate an action by the subsystem.

Technique to deposit sidewall passivation for high aspect ratio cylinder etch

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reactants and/or reaction mechanisms that result in substantially complete sidewall coating at relatively low temperatures without the use of plasma. In some cases the protective coating is deposited using molecular layer deposition techniques.

Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating (e.g., a metal-containing coating) on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. Metal-containing coatings have been shown to provide particularly good resistance to lateral etch during the etching operation. In some cases, a bilayer approach may be used to deposit the protective coating on sidewalls of partially etched features.

Wet bottling process for small diameter deep trench capacitors

A method including forming a deep trench in a semiconductor-on-insulator substrate including an SOI layer directly on top of a buried oxide layer directly on top of a base substrate, masking only a top surface of the SOI layer and a sidewall of the SOI layer exposed within an upper portion of the deep trench with a dielectric material without masking any surface of the base substrate exposed within a lower portion of the deep trench, and forming a bottle shaped trench by etching the base substrate exposed in the lower portion of the deep trench selective to the dielectric material and the buried oxide layer.

Methods for generating natural language processing systems

Methods are presented for generating a natural language model. The method may comprise: ingesting training data representative of documents to be analyzed by the natural language model, generating a hierarchical data structure comprising at least two topical nodes within which the training data is to be subdivided into by the natural language model, selecting a plurality of documents among the training data to be annotated, generating an annotation prompt for each document configured to elicit an annotation about said document indicating which node among the at least two topical nodes said document is to be classified into, receiving the annotation based on the annotation prompt; and generating the natural language model using an adaptive machine learning process configured to determine patterns among the annotations for how the documents in the training data are to be subdivided according to the at least two topical nodes of the hierarchical data structure.