FIRING TRIGGER LOCKOUT ARRANGEMENTS FOR SURGICAL INSTRUMENTS

A surgical instrument system can comprise, one, a surgical instrument including a handle, a shaft comprising a distal end, and a trigger and, two, an end effector attachable to the shaft. The instrument can further include a firing member and a motor configured to move the firing member toward the distal end, wherein the trigger is configured to operate the motor. The surgical instrument system can further include a plurality of sensors configured to detect one or more error conditions, a plurality of indicators, and a controller in communication with the plurality of sensors and the indicators, wherein the controller is configured to selectively activate the indicators to indicate the error conditions detected. A surgical instrument can comprise a plurality of actuators and a plurality of actuator locks, wherein the controller can actuate one or more of the actuator locks to indicate the error condition detected.

Powered surgical stapling device

A surgical stapler includes a handle assembly, an end effector, a firing rod disposed in mechanical cooperation with the end effector, a drive motor coupled to the firing rod, a sensor, and a controller. The end effector includes a first and second jaw member moveable relative to one another. The first jaw member includes a surgical fastener and the second jaw member includes an anvil. The drive motor is configured to advance the firing rod to cause the first and second jaw members to clamp tissue and to eject a surgical fastener. The surgical stapler includes a sensor that is configured measure a clamping force exerted on tissue by the first and second jaw members. The controller control a speed of the drive motor based on the measured clamping force.

Surgical system comprising drive systems

A surgical assembly configured to be operably attached to a surgical robot is disclosed. The surgical assembly comprises a housing and a stapling assembly. The housing comprises a first, a second, and a third drive system. The stapling assembly comprises an end effector including a staple cartridge, a distal shaft assembly, a proximal shaft assembly, and an interface. The distal shaft assembly comprises a first driver configured to rotate the end effector, a second driver configured to articulate the end effector, and a third driver configured to move axially within the end effector. The proximal shaft assembly comprises a first drive train operably responsive to the first drive system, a second drive train operably responsive to the second drive system, and a third drive train operably responsive to the third drive system. The interface is configured to operably couple the distal shaft assembly to the proximal shaft assembly.

Surgical stapling instruments with rotatable staple deployment arrangements

A surgical instrument is disclosed. The surgical instrument comprises an actuation system for selectively generating a plurality of rotary motions, and an end effector operably coupled to the actuation system. The end effector comprises a fastener cartridge comprising a plurality of fasteners arranged in at least two spaced fastener lines, a drive shaft configured to rotate in response to the rotary motions, a plurality of fastener deploying surfaces, and an actuation member operably interfacing with the drive shaft. The actuation member is translated axially within the fastener cartridge between a starting position and an ending position when the drive shaft is rotated. The fastener deploying surfaces are rotated in response to the actuation member being translated from the starting position to the ending position. The fasteners are sequentially ejected as the actuation member is driven from the starting position to the ending position.

Articulation for surgical robot

A surgical robotic component comprising an articulated terminal portion, the terminal portion comprising: a distal segment having an attachment for a surgical tool; a basal segment for attaching the terminal portion to the remainder of the surgical robotic component; and an intermediate compound joint between the distal segment and the basal segment, the intermediate compound joint permitting relative rotation of the distal segment and the basal segment about first, second and third axes; the terminal portion being arranged such that, in at least one configuration of the intermediate compound joint: (i) the axial direction of the basal segment is parallel to the axial direction of the distal segment, and (ii) the first, second and third axes are transverse to the axial directions of the basal and distal segments.

Semiconductor devices with varying threshold voltage and fabrication methods thereof

Semiconductor device fabrication methods are provided which include: providing a structure with at least one region and including a dielectric layer disposed over a substrate; forming a multilayer stack structure including a threshold-voltage adjusting layer over the dielectric layer, the multilayer stack structure including a first threshold-voltage adjusting layer in a first region of the at least one region, and a second threshold-voltage adjusting layer in a second region of the at least one region; and annealing the structure to define a varying threshold voltage of the at least one region, the annealing facilitating diffusion of at least one threshold voltage adjusting species from the first threshold-voltage adjusting layer and the second threshold-voltage adjusting layer into the dielectric layer, where a threshold voltage of the first region is independent of the threshold voltage of the second region.

Techniques for discovering and managing security of applications

Techniques for discovery and management of applications in a computing environment of an organization are disclosed. A security management system discovers use of applications within a computing environment to manage access to applications for minimizing security threats and risks in a computing environment of the organization. The security management system can obtain network data about network traffic to identify unique applications. The security management system can perform analysis and correlation, including use of one or more data sources, to determine information about an application. The system can compute a measure of security for an application (“an application risk score”) and a user (“a user risk score”). The score may be analyzed to determine a threat of security posed by the application based on use of the application. The security system can perform one or more instructions to configure access permitted by an application, whether access is denied or restricted.

Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches

A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing either one of but not both of the top/bottom portion and the sidewall portion of the film by wet etching which removes the one of the top/bottom portion and the sidewall portion of the film more predominantly than the other according to the different chemical resistance properties.

Method of producing transition metal dichalcogenide layer

Method of producing one or more transition metal dichalcogenide (MX2) layers on a substrate, comprising the steps of: obtaining a substrate having a surface and depositing MX2 on the surface using ALD deposition, starting from a metal halide precursor and a chalcogen source (H2X), at a deposition temperature of about 300° C. Suitable metals are Mo and W, suitable chalcogenides are S, Se and Te. The substrate may be (111) oriented. Also mixtures of two or more MX2 layers of different compositions can be deposited on the substrate, by repeating at least some of the steps of the method.

Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations

Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.