Surgical device drive system including a ratchet mechanism

A surgical device drive system comprising a gear coupled to a drive train is disclosed. The gear is configured to transmit a proximal retraction motion to a drive member. The surgical device drive system further comprises a control system coupled to the gear, and a manual input device comprising an input component and a ratchet mechanism. The input component is selectively coupled to the gear by the ratchet mechanism. The drive train is operable in a distal advancement direction and in a proximal retraction direction. In a first state, the control system is configured to drive the gear and the drive train in the distal advancement direction and the proximal retraction direction. In a second state, the manual input device is configured to drive the gear and the drive train in the proximal retraction direction, but not the distal advancement direction, using the ratchet mechanism.

Robotic surgical attachments having manually-actuated retraction assemblies

A robotic surgical attachment is disclosed. The robotic surgical attachment comprises a control interface comprising a manually-actuated retraction assembly and a shaft extending distally from the control interface. The robotic surgical attachment further comprises an articulation region and an end effector assembly extending from the shaft by way of the articulation region. The end effector assembly comprises a firing member movable through a first distance during a jaw closure stroke and a second distance to cut and staple tissue clamped between jaws of the end effector assembly after the completion of the closure stroke. The manually-actuated retraction assembly is operable to selectively retract the firing member.

Layer of material for a surgical end effector

A staple cartridge comprising a tissue thickness compensator is disclosed. The tissue thickness compensator comprises an external layer and tubular elements. The tubular elements are interconnected and positioned within the external layer. The tubular elements comprise apertures defined therein and the tubular elements are configured to collapse as pressure is applied to the tissue thickness compensator by tissue during the firing motion. The apertures enable fluids from the tissue to permeate the tissue thickness compensator.

Surgical stapling device with rotary multi-turn retraction mechanism

A powered surgical device configured to clamp and fasten tissue is disclosed. The powered surgical device comprises a shaft, an articulation joint, a motor-driven flexible drive member movably supported in the shaft, an I-beam coupled to the motor-driven flexible drive member, and a housing. The shaft comprises a proximal end. The motor-driven flexible drive member passes through the articulation joint during a tissue clamping motion. The motor-driven flexible drive member is driven distally away from the proximal end of the shaft during the tissue clamping motion. The housing is coupled to the proximal end of the shaft. The housing comprises a rotary multi-turn unidirectional manually-operated retraction mechanism. A rotation of the rotary multi-turn unidirectional manually-operated retraction mechanism in a first direction is configured to retract the motor-driven flexible drive member proximally toward the proximal end of the shaft.

Methods for forming a semiconductor device structure and related semiconductor device structures

Methods for forming a semiconductor device structure are provided. The methods may include forming a molybdenum nitride film on a substrate by atomic layer deposition by contacting the substrate with a first vapor phase reactant comprising a molybdenum precursor, contacting the substrate with a second vapor phase reactant comprise a nitrogen precursor, and contacting the substrate with a third vapor phase reactant comprising a reducing precursor. The methods provided may also include forming a gate electrode structure comprising the molybdenum nitride film, the gate electrode structure having an effective work function greater than approximately 5.0 eV. Semiconductor device structures including molybdenum nitride films are also provided.

Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus

A method of forming a transition metal containing films on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant. A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing ligand to a reaction chamber is disclosed, along with related vapor deposition apparatus.

Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly

Gas-phase reactor systems and methods suitable for use with precursors that are solid phase at room temperature and pressure are disclosed. The systems and methods as described herein can be used to, for example, form amorphous, polycrystalline, or epitaxial layers (e.g., one or more doped semiconductor layers) on a surface of a substrate.

SELECTIVE DEPOSITION OF TUNGSTEN

A method for selectively depositing a metal film onto a substrate is disclosed. In particular, the method comprising flowing a metal precursor onto the substrate and flowing a non-metal precursor onto the substrate, while contacting the non-metal precursor with a hot wire. Specifically, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten film, where the hydrogen precursor is excited by a tungsten hot wire.

Methods for mitigating interference and maximizing capacity for time division duplex cellular networks

Time division duplexed (TDD) Cellular networks can experience interference in receive times from downlink transmissions by aggressor cells after network changes, or from tropospheric ducting. The interference from the aggressor cells can be efficiently mitigated by determining that the victim cell is being affected by such interference, identifying the aggressor cells, and selectively increasing the guard time between the aggressor cells and the victim cell.

Method and system for analyzing the control of a vehicle

A method and a system analyze the control of a vehicle having an autonomous driving unit. A change in the driving mode from autonomous driving to manual driving is detected, and at least one driving parameter before and/or after detecting the change is monitored. Based on driving values obtained by the monitoring with respect to the detected change in driving mode, at least one driving quantity quantifying the quality of interplay between the autonomous driving unit and a human driver is determined.