Patent Applications published on Feb 25, 2021

Explore the 7,260 U.S. Patent Applications published on the 08th week of 2021, including 5,785 applications that subsequently received a Patent Grant.

Featured patent applications from Feb 25, 2021

Published: 2021-02-25 Assignee: Cilag GmbH International.
US20210052271A1
Human necessities
Application 20210052271, fig. 01

Systems and methods for controlling motor speed according to user input for a surgical instrument

A surgical system is disclosed comprising a firing member movable from a proximal position toward a distal position during a firing stroke, a motor configured to drive the firing member toward the distal position, and a control system configured to operate in an open-loop configuration and a closed-loop configuration. In the open-loop configuration, the control system is configured to cause the motor to drive the firing member to a predetermined position between the proximal position and the distal position, determine a time required to drive the firing member to the predetermined position, compare the determined time to a predetermined time, and set a motor velocity of the motor based on the comparison. In the closed-loop configuration, the control system is configured to drive the firing member at the set motor velocity.

Published: 2021-02-25 Assignee: ASM IP Holding B.V..
US20210057223A1
Electricity
Application 20210057223, fig. 01

Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film

Methods for depositing a molybdenum nitride film on a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; and depositing a molybdenum nitride film directly on the surface of the substrate by performing one or more unit deposition cycles of cyclical deposition process, wherein a unit deposition cycle may include, contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, and contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor. Semiconductor device structures including a molybdenum nitride film are also disclosed.

Published: 2021-02-25 Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD..
US20210057570A1
Electricity
Application 20210057570, fig. 01

Methods of forming semiconductor devices having plural epitaxial layers

In an embodiment, a device includes: a fin extending from a substrate; a gate stack over a channel region of the fin; and a source/drain region in the fin adjacent the channel region, the source/drain region including: a first epitaxial layer contacting sidewalls of the fin, the first epitaxial layer including silicon and germanium doped with a dopant, the first epitaxial layer having a first concentration of the dopant; and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer including silicon and germanium doped with the dopant, the second epitaxial layer having a second concentration of the dopant, the second concentration being greater than the first concentration, the first epitaxial layer and the second epitaxial layer having a same germanium concentration.

Published: 2021-02-25
US20210054500A1
Chemistry; metallurgy
Application 20210054500, fig. 01

Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film

Methods for forming a polycrystalline molybdenum film over a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; depositing a nucleation film directly on an exposed surface of the substrate, wherein the nucleation film comprises one of a metal oxide nucleation film or a metal nitride nucleation film; and depositing a polycrystalline molybdenum film directly on the nucleation film; wherein the polycrystalline molybdenum film comprises a plurality of molybdenum crystallites having an average crystallite size of less than 80 Å. Structures including a polycrystalline molybdenum film disposed over a surface of a substrate with an intermediate nucleation film are also disclosed.

Published: 2021-02-25 Assignee: ASM IP Holding B.V..
US20210057214A1
Electricity
Application 20210057214, fig. 01

Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane

In a method of depositing a silicon oxide film using bis(diethylamino)silane (BDEAS) on a substrate in a reaction space by plasma-enhanced atomic layer deposition (PEALD), each repeating deposition cycle of PEALD includes steps of: (i) adsorbing BDEAS on the substrate placed on a susceptor having a temperature of higher than 400° C. in an atmosphere substantially suppressing thermal decomposition of BDEAS in the reaction space; and (ii) exposing the substrate on which BDEAS is adsorbed to an oxygen plasma in the atmosphere in the reaction space, thereby depositing a monolayer or sublayer of silicon oxide.

Published: 2021-02-25 Assignee: ASM IP Holding B.V..
US20210057275A1
Electricity
Application 20210057275, fig. 01

Method for forming a structure with a hole

A method for forming a structure with a hole on a substrate is disclosed. The method may comprise: depositing a first structure on the substrate; etching a first part of the hole in the first structure; depositing a plug fill in the first part of the hole; depositing a second structure on top of the first structure; etching a second part of the hole substantially aligned with the first part of the hole in the second structure; and, etching the plug fill of the first part of the hole and thereby opening up the hole by dry etching. In this way 3-D NAND device may be provided.

Published: 2021-02-25 Assignee: ASM IP Holding B.V..
US20210054504A1
Chemistry; metallurgy
Application 20210054504, fig. 01

Film-forming material mixed-gas forming device and film forming device

There is provided a film-forming material mixed-gas forming device including: a film-forming material supply unit that supplies a film-forming material in liquid form at a predetermined flow rate; a carrier gas supply unit that supplies a carrier gas at a predetermined flow rate; a main vaporization unit that vaporizes the film-forming material by heating the film-forming material supplied from the film-forming material supply unit and the carrier gas supplied from the carrier gas supply unit; and an auxiliary vaporization unit having a porous vaporization member which captures carried over droplets of the film-forming material in gas flowing out from the main vaporization unit and vaporizes the captured droplets of the film-forming material.

Published: 2021-02-25
US20210058146A1
Electricity
Application 20210058146, fig. 01

Dynamic geographical spectrum sharing

Methods, apparatuses, computer-readable mediums for storing software, and systems for dynamic geographical spectrum sharing (DGSS) by Earth exploration satellite services (EESS) are described herein. Using DGSS mechanisms described herein, electromagnetic spectrum may be shared by sensors onboard Earth exploration satellites and wireless networks, such as 5G networks. The DGSS mechanisms may include mechanisms for determining an instantaneous field of view (IFOV) and mechanisms for modifying transmission characteristics while network antennas and power radiated by such antennas are within a window encompassing the IFOV. For example, when the IFOV of a satellite sensor for measuring atmospheric water includes a 5G antenna, the power of the 5G antenna may be reduced, the 5G antenna may be prevented from utilizing a segment of the electromagnetic spectrum, etc. The DGSS mechanisms may also determine actual out of band emissions for a specific pixel associated with the IFOV and improve pixel location determinations.

Published: 2021-02-25 Assignee: Pismo Labs Technology Limited.
US20210058271A1
Electricity
Application 20210058271, fig. 01

Methods and systems for transmitting information packets through tunnel groups at a network node

The present invention discloses methods and systems for sending information packets from a first network node to a second network node. An aggregated tunnel is established between the first network node and the second network node. An information packet is determined whether to be sent according to profile condition(s) of the aggregated tunnel and then according to a selected policy. When a selected policy is selected and the information packet is sent through a tunnel according to the selected policy. When no policy is selected, the information packet is sent through one of a first group of tunnels. When no profile is selected, the information packet is sent through a network interface of the first network node.

Published: 2021-02-25
US20210054727A1
Fixed constructions
Application 20210054727, fig. 01

OIL AND GAS ZIPPER MANIFOLD

A fluid conduit communicates fluid between a zipper leg and an oil and gas wellhead. The fluid conduit may be completely flexible, completely rigid, or partially flexible and partially rigid. The fluid conduit is coupled to the wellhead via a first flow block. The first flow block may include a first downwardly angled surface through which a first downwardly angled flow passage extends and to which a first end portion of the fluid conduit is connected. Similarly, the fluid conduit is coupled to the zipper leg via a second flow block. The second flow block may include a second downwardly angled surface through which a second downwardly angled flow passage extends and to which the fluid conduit is connected.