T3Memory, Inc.

City:

Fremont, California

Country:

United States

Published Applications:

Last publication date:

2016-07-21

Patent Grants:

Last grant date:

2021-08-17

Top Inventors for applications by T3Memory, Inc.

These are the the leading inventors for applications assigned to T3Memory, Inc.:

YIMIN GUO 2 SAN JOSE, CA United States
RONGFU XIAO 1 DUBLIN, CA United States

Recent patent applications by T3Memory, Inc.

T3Memory, Inc. based in Fremont, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2016-07-21 ✅ Patent 11,094,877 granted on 2021-08-17

US20160211445A1

Electricity

Method for making MRAM with small dimension and high qulity

#2 | 2016-06-16

US20160172585A1

Electricity

AN IMPROVED METHOD TO MAKE OF FABRICATING IC/MRAM USING OXYGEN ION IMPLANTATION

#3 | 2016-06-09

US20160163974A1

Electricity

ELECTRIC FIELD ASSISTED PERPENDICULAR STT-MRAM

Also check out T3MEMORY, INC.'s (Fremont, United States) applicant profile with 1 patent applications submitted.

AssigneeID:

109344 ⎘