Assignee profile:

Polar Semiconductor, LLC

City:

Bloomington, Minnesota

Country:

United States

Published Applications:

18

Last publication date:

2023-07-06

Patent Grants:

18

Last grant date:

2024-11-12

Top Inventors for applications by Polar Semiconductor, LLC

These are the the leading inventors for applications assigned to Polar Semiconductor, LLC:

Recent patent applications by Polar Semiconductor, LLC

Polar Semiconductor, LLC based in Bloomington, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2023-07-06 ✅ Patent 12,142,481 granted on 2024-11-12
US20230215727A1
Electricity

Forming passivation stack having etch stop layer

#2 | 2023-03-02 ✅ Patent 12,015,079 granted on 2024-06-18
US20230065066A1
Electricity

Transistor with single termination trench having depth more than 10 microns

#3 | 2021-11-18 ✅ Patent 11,329,147 granted on 2022-05-10
US20210359115A1
Electricity

Insulated gate bipolar transistor with epitaxial layer formed on recombination region

#4 | 2021-10-21 ✅ Patent 11,264,496 granted on 2022-03-01
US20210328054A1
Electricity

Transistor with buried p-field termination region

#5 | 2020-04-23 ✅ Patent 11,245,006 granted on 2022-02-08
US20200127092A1
Electricity

Trench semiconductor device layout configurations

#6 | 2019-06-25 ✅ Patent 10,332,992 granted on 2019-06-25
US15876269
Electricity

Semiconductor device having improved trench, source and gate electrode structures

#7 | 2019-03-14 ✅ Patent 10,896,885 granted on 2021-01-19
US20190081016A1
Electricity

High-voltage MOSFET structures

#8 | 2018-06-21 ✅ Patent 10,580,861 granted on 2020-03-03
US20180175146A1
Electricity

Trench semiconductor device layout configurations

#9 | 2017-09-14 ✅ Patent 10,141,440 granted on 2018-11-27
US20170263765A1
Electricity

Drift-region field control of an LDMOS transistor using biased shallow-trench field plates

#10 | 2017-09-14 ✅ Patent 10,153,366 granted on 2018-12-11
US20170263759A1
Electricity

LDMOS transistor with lightly-doped annular RESURF periphery

#11 | 2017-09-14 ✅ Patent 9,818,828 granted on 2017-11-14
US20170263718A1
Electricity

Termination trench structures for high-voltage split-gate MOS devices

#12 | 2017-09-14 ✅ Patent 9,899,343 granted on 2018-02-20
US20170263580A1
Electricity

High voltage tolerant bonding pad structure for trench-based semiconductor devices

#13 | 2017-08-17 ✅ Patent 10,388,783 granted on 2019-08-20
US20170236934A1
Electricity

Floating-shield triple-gate MOSFET

#14 | 2017-02-02 ✅ Patent 9,704,765 granted on 2017-07-11
US20170033022A1
Electricity

Method of controlling etch-pattern density and device made using such method

#15 | 2014-01-23 ✅ Patent 8,891,262 granted on 2014-11-18
US20140022828A1
Electricity

Series switch bridgeless power supply

#16 | 2013-11-14 ✅ Patent 9,818,742 granted on 2017-11-14
US20130299911A1
Electricity

Semiconductor device isolation using an aligned diffusion and polysilicon field plate

#17 | 2013-11-07 ✅ Patent 9,269,705 granted on 2016-02-23
US20130292770A1
Electricity

Anti-snapback circuitry for metal oxide semiconductor (MOS) transistor

#18 | 2013-09-12 ✅ Patent 8,994,152 granted on 2015-03-31
US20130234303A1
Electricity

Metal shield for integrated circuits

Also check out Polar Semiconductor, LLC's (Bloomington, United States) applicant profile with 14 patent applications submitted.

AssigneeID:

157480 ⎘