Assignee profile:

Kaai, Inc.

City:

Goleta, California

Country:

United States

Published Applications:

10

Last publication date:

2016-01-14

Patent Grants:

6

Last grant date:

2017-01-10

Top Inventors for applications by Kaai, Inc.

These are the the leading inventors for applications assigned to Kaai, Inc.:

Recent patent applications by Kaai, Inc.

Kaai, Inc. based in Goleta, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2016-01-14 ✅ Patent 9,543,738 granted on 2017-01-10
US20160013620A9
Electricity

Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates

#2 | 2012-11-15 ✅ Patent 9,105,806 granted on 2015-08-11
US20120288974A1
Electricity

Polarization direction of optical devices using selected spatial configurations

#3 | 2011-03-17 ✅ Patent 8,351,478 granted on 2013-01-08
US20110064102A1
Electricity

Growth structures and method for forming laser diodes on {30-31} or off cut gallium and nitrogen containing substrates

#4 | 2011-03-17
US20110064101A1
Electricity

Low Voltage Laser Diodes on Gallium and Nitrogen Containing Substrates

#5 | 2011-03-17 ✅ Patent 8,355,418 granted on 2013-01-15
US20110064100A1
Electricity

Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates

#6 | 2010-12-16 ✅ Patent 9,531,164 granted on 2016-12-27
US20100316075A1
Electricity

Optical device structure using GaN substrates for laser applications

#7 | 2010-11-25
US20100295088A1
Electricity

TEXTURED-SURFACE LIGHT EMITTING DIODE AND METHOD OF MANUFACTURE

#8 | 2010-02-04 ✅ Patent 8,124,996 granted on 2012-02-28
US20100025656A1
Electricity

White light devices using non-polar or semipolar gallium containing materials and phosphors

#9 | 2010-01-07
US20100001300A1
Electricity

COPACKING CONFIGURATIONS FOR NONPOLAR GaN AND/OR SEMIPOLAR GaN LEDs

#10 | 2009-12-17
US20090309127A1
Electricity

SELECTIVE AREA EPITAXY GROWTH METHOD AND STRUCTURE

AssigneeID:

169307 ⎘