Assignee profile:

LUMIENSE PHOTONICS INC.

City:

Vancouver

Country:

Canada

Published Applications:

11

Last publication date:

2012-03-15

Patent Grants:

10

Last grant date:

2014-09-30

Top Inventors for applications by LUMIENSE PHOTONICS INC.

These are the the leading inventors for applications assigned to LUMIENSE PHOTONICS INC.:

Recent patent applications by LUMIENSE PHOTONICS INC.

LUMIENSE PHOTONICS INC. based in Vancouver, CA has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2012-03-15 ✅ Patent 8,847,160 granted on 2014-09-30
US20120061572A1
Electricity

Semiconductor for sensing infrared radiation and method thereof

#2 | 2011-09-08 ✅ Patent 8,183,079 granted on 2012-05-22
US20110217805A1
Electricity

Semiconductor device and method of manufacturing the same

#3 | 2011-03-17 ✅ Patent 8,232,127 granted on 2012-07-31
US20110065223A1
Electricity

Thermo-electric semiconductor device and method for manufacturing the same

#4 | 2010-12-23 ✅ Patent 7,943,409 granted on 2011-05-17
US20100323468A1
Electricity

Method of fabricating image sensor photodiodes using a multi-layer substrate and contact method and the structure thereof

#5 | 2010-07-22 ✅ Patent 8,063,370 granted on 2011-11-22
US20100181486A1
Electricity

Semiconductor device and method of manufacturing the same

#6 | 2010-05-13 ✅ Patent 8,039,797 granted on 2011-10-18
US20100116988A1
Electricity

Semiconductor for sensing infrared radiation and method thereof

#7 | 2010-05-06 ✅ Patent 7,977,718 granted on 2011-07-12
US20100109117A1
Electricity

Image sensor photodiodes using a multi-layer substrate and contact method and structure thereof

#8 | 2010-03-25
US20100072461A1
Electricity

THERMO-ELECTRIC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

#9 | 2010-02-18 ✅ Patent 7,723,686 granted on 2010-05-25
US20100038540A1
Physics

Image sensor for detecting wide spectrum and method of manufacturing the same

#10 | 2008-08-07 ✅ Patent 7,838,318 granted on 2010-11-23
US20080185674A1
Electricity

Method of fabricating image sensor photodiodes using a multi-layer substrate and contact method and the structure thereof

#11 | 2008-07-03 ✅ Patent 7,977,145 granted on 2011-07-12
US20080160723A1
Electricity

Method of fabricating silicon/dielectric multi-layer semiconductor structures using layer transfer technology and also a three-dimensional multi-layer semiconductor device and stacked layer type image sensor using the same method, and a method of manufacturing a three-dimensional multi-layer semiconductor device and the stack type image sensor

Also check out LUMIENSE PHOTONICS INC.'s (Vancouver, Canada) applicant profile with 1 patent applications submitted.

AssigneeID:

178203 ⎘