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Assignee profile:

HANVISION CO., LTD

City:

Daejeon-si

Country:

South Korea

Published Applications:

12

Last publication date:

2012-03-15

Patent Grants:

10

Last grant date:

2014-09-30

Top Inventors for applications by HANVISION CO., LTD

These are the the leading inventors for applications assigned to HANVISION CO., LTD:

Recent patent applications by HANVISION CO., LTD

HANVISION CO., LTD based in Daejeon-si, KR has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2012-03-15 ✅ Patent 8,847,160 granted on 2014-09-30
US20120061572A1
Electricity

Semiconductor for sensing infrared radiation and method thereof

 #2 | 2011-09-08 ✅ Patent 8,183,079 granted on 2012-05-22
US20110217805A1
Electricity

Semiconductor device and method of manufacturing the same

 #3 | 2011-07-14
US20110169918A1
Electricity

3D IMAGE SENSOR AND STEREOSCOPIC CAMERA HAVING THE SAME

 #4 | 2011-03-17 ✅ Patent 8,232,127 granted on 2012-07-31
US20110065223A1
Electricity

Thermo-electric semiconductor device and method for manufacturing the same

 #5 | 2010-12-23 ✅ Patent 7,943,409 granted on 2011-05-17
US20100323468A1
Electricity

Method of fabricating image sensor photodiodes using a multi-layer substrate and contact method and the structure thereof

 #6 | 2010-07-22 ✅ Patent 8,063,370 granted on 2011-11-22
US20100181486A1
Electricity

Semiconductor device and method of manufacturing the same

 #7 | 2010-05-13 ✅ Patent 8,039,797 granted on 2011-10-18
US20100116988A1
Electricity

Semiconductor for sensing infrared radiation and method thereof

 #8 | 2010-05-06 ✅ Patent 7,977,718 granted on 2011-07-12
US20100109117A1
Electricity

Image sensor photodiodes using a multi-layer substrate and contact method and structure thereof

 #9 | 2010-03-25
US20100072461A1
Electricity

THERMO-ELECTRIC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

 #10 | 2010-02-18 ✅ Patent 7,723,686 granted on 2010-05-25
US20100038540A1
Physics

Image sensor for detecting wide spectrum and method of manufacturing the same

 #11 | 2008-08-07 ✅ Patent 7,838,318 granted on 2010-11-23
US20080185674A1
Electricity

Method of fabricating image sensor photodiodes using a multi-layer substrate and contact method and the structure thereof

 #12 | 2008-07-03 ✅ Patent 7,977,145 granted on 2011-07-12
US20080160723A1
Electricity

Method of fabricating silicon/dielectric multi-layer semiconductor structures using layer transfer technology and also a three-dimensional multi-layer semiconductor device and stacked layer type image sensor using the same method, and a method of manufacturing a three-dimensional multi-layer semiconductor device and the stack type image sensor
AssigneeID:

178204 ⎘