Kaohsiung
Taiwan
24
2011-07-28
18
2013-02-19
These are the the leading inventors for applications assigned to FORCE MOS TECHNOLOGY CO., LTD.:
FORCE MOS TECHNOLOGY CO., LTD. based in Kaohsiung, TW has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation
#2 | 2011-07-14 ✅ Patent 8,148,773 granted on 2012-04-03Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation
#3 | 2011-07-07 ✅ Patent 8,314,000 granted on 2012-11-20LDMOS with double LDD and trenched drain
#4 | 2011-05-12 ✅ Patent 8,120,106 granted on 2012-02-21LDMOS with double LDD and trenched drain
#5 | 2011-01-13 ✅ Patent 8,222,108 granted on 2012-07-17Method of making a trench MOSFET having improved avalanche capability using three masks process
#6 | 2011-01-13Trench MOSFET with on-resistance reduction
#7 | 2010-12-16 ✅ Patent 8,164,162 granted on 2012-04-24Power semiconductor devices integrated with clamp diodes sharing same gate metal pad
#8 | 2010-11-18 ✅ Patent 8,004,009 granted on 2011-08-23Trench MOSFETS with ESD Zener diode
#9 | 2010-11-18 ✅ Patent 7,936,014 granted on 2011-05-03Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation
#10 | 2010-11-04 ✅ Patent 8,034,686 granted on 2011-10-11Method of manufacturing a trench MOSFET having trench contacts integrated with trench Schottky rectifiers having planar contacts
#11 | 2010-11-04 ✅ Patent 8,072,000 granted on 2011-12-06Avalanche capability improvement in power semiconductor devices having dummy cells around edge of active area
#12 | 2010-10-21Low Qgd trench MOSFET integrated with schottky rectifier
#13 | 2010-10-19 ✅ Patent 7,816,720 granted on 2010-10-19Trench MOSFET structure having improved avalanche capability using three masks process
#14 | 2010-09-23 ✅ Patent 8,101,993 granted on 2012-01-24MSD integrated circuits with shallow trench
#15 | 2010-09-23 ✅ Patent 7,898,026 granted on 2011-03-01LDMOS with double LDD and trenched drain
#16 | 2010-09-07 ✅ Patent 7,791,136 granted on 2010-09-07Trench MOSFET having trench contacts integrated with trench Schottky rectifiers having planar contacts
#17 | 2010-08-12Mosfets with terrace irench gate and improved source-body contact
#18 | 2010-07-15MOSFET with source contact in trench and integrated schottky diode
#19 | 2010-07-15 ✅ Patent 7,786,528 granted on 2010-08-31Metal schemes of trench MOSFET for copper bonding
#20 | 2010-05-27Trench MOSFET with terrace gate and self-aligned source trench contact
#21 | 2010-05-27 ✅ Patent 7,847,346 granted on 2010-12-07Trench MOSFET with trench source contact having copper wire bonding
#22 | 2010-05-20 ✅ Patent 8,004,036 granted on 2011-08-23MOSFET-Schottky rectifier-diode integrated circuits with trench contact structures for device shrinkage and performance improvement
#23 | 2009-12-24Trench MOSFET with shallow trench structures
#24 | 2009-08-27 ✅ Patent 7,897,997 granted on 2011-03-01Trench IGBT with trench gates underneath contact areas of protection diodes
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