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Assignee profile:

AXT, INC.

City:

Fremont, California

Country:

United States

Published Applications:

16

Last publication date:

2023-12-28

Patent Grants:

13

Last grant date:

2025-08-26

Top Inventors for applications by AXT, INC.

These are the the leading inventors for applications assigned to AXT, INC.:

Recent patent applications by AXT, INC.

AXT, INC. based in Fremont, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2023-12-28 ✅ Patent 12,398,486 granted on 2025-08-26
US20230416941A1
Chemistry; metallurgy

METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSENIDE SUBSTRATES

 #2 | 2023-12-21 ✅ Patent 12,084,790 granted on 2024-09-10
US20230407522A1
Chemistry; metallurgy

Low etch pit density 6 inch semi-insulating gallium arsenide wafers

 #3 | 2023-07-06 ✅ Patent 12,054,851 granted on 2024-08-06
US20230212784A1
Chemistry; metallurgy

Low etch pit density, low slip line density, and low strain indium phosphide

 #4 | 2021-09-02 ✅ Patent 11,608,569 granted on 2023-03-21
US20210269939A1
Chemistry; metallurgy

Low etch pit density, low slip line density, and low strain indium phosphide

 #5 | 2020-06-18 ✅ Patent 12,276,044 granted on 2025-04-15
US20200190697A1
Chemistry; metallurgy

Low etch pit density gallium arsenide crystals with boron dopant

 #6 | 2020-06-18 ✅ Patent 11,680,340 granted on 2023-06-20
US20200190696A1
Chemistry; metallurgy

Low etch pit density 6 inch semi-insulating gallium arsenide wafers

 #7 | 2011-12-01 ✅ Patent 8,361,225 granted on 2013-01-29
US20110293890A1
Chemistry; metallurgy

Low etch pit density (EPD) semi-insulating III-V wafers

 #8 | 2011-06-16 ✅ Patent 8,647,433 granted on 2014-02-11
US20110143091A1
Chemistry; metallurgy

Germanium ingots/wafers having low micro-pit density (MPD) as well as systems and methods for manufacturing same

 #9 | 2010-07-15 ✅ Patent 8,318,042 granted on 2012-11-27
US20100176336A1
Chemistry; metallurgy

Systems, methods and solutions for chemical polishing of GaAs wafers

 #10 | 2010-05-13 ✅ Patent 8,506,706 granted on 2013-08-13
US20100116196A1
Chemistry; metallurgy

Systems, methods and substrates of monocrystalline germanium crystal growth

 #11 | 2010-01-07
US20100001288A1
Chemistry; metallurgy

Low Etch Pit Density (EPD) Semi-Insulating GaAs Wafers

 #12 | 2009-10-08 ✅ Patent 8,231,727 granted on 2012-07-31
US20090249994A1
Chemistry; metallurgy

Crystal growth apparatus and method

 #13 | 2009-07-16
US20090179015A1
Performing operations; transporting

LASER ADJUSTABLE DEPTH MARK SYSTEM AND METHOD

 #14 | 2008-11-13 ✅ Patent 7,566,641 granted on 2009-07-28
US20080280427A1
Chemistry; metallurgy

Low etch pit density (EPD) semi-insulating GaAs wafers

 #15 | 2006-08-17
US20060183329A1
Electricity

Apparatus and method for reducing impurities in a semiconductor material

 #16 | 2005-05-24 ✅ Patent 6,896,729 granted on 2005-05-24
US10190001
-

Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control

Also check out AXT, Inc.'s (Fremont, United States) applicant profile with 9 patent applications submitted.

AssigneeID:

202790 ⎘