HsinChu
Taiwan
15
2010-10-14
7
2012-04-24
These are the the leading inventors for applications assigned to FORCE MOS TECHNOLOGY CO. LTD.:
FORCE MOS TECHNOLOGY CO. LTD. based in HsinChu, TW has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
MOSFET structure with guard ring
#2 | 2010-09-09 ✅ Patent 7,956,410 granted on 2011-06-07Trench MOSFET with trench gates underneath contact areas of ESD diode for prevention of gate and source shortage
#3 | 2010-07-08TRENCH MOSFET WITH IMPROVED SOURCE-BODY CONTACT
#4 | 2010-04-15TRENCH MOSFET WITH SHALLOW TRENCH CONTACT
#5 | 2010-04-15TRENCH MOSFET WITH SHORT CHANNEL FORMED BY PN DOUBLE EPITAXIAL LAYERS
#6 | 2010-03-25 ✅ Patent 8,269,273 granted on 2012-09-18Trench MOSFET with etching buffer layer in trench gate
#7 | 2010-02-18 ✅ Patent 8,030,702 granted on 2011-10-04Trenched MOSFET with guard ring and channel stop
#8 | 2009-12-24 ✅ Patent 7,626,231 granted on 2009-12-01Integrated trench MOSFET and junction barrier schottky rectifier with trench contact structures
#9 | 2009-12-24 ✅ Patent 7,816,732 granted on 2010-10-19Integrated trench MOSFET and Schottky rectifier with trench contact structure
#10 | 2009-12-24TRENCH MOSFET WITH SHALLOW TRENCH FOR GATE CHARGE REDUCTION
#11 | 2009-12-17TRENCH SCHOTTKY WITH MULTIPLE EPI STRUCTURE
#12 | 2009-12-17METHOD OF FABRICATING COLLECTOR OF IGBT
#13 | 2009-12-17TESTING DEVICE ON WATER FOR MONITORING VERTICAL MOSFET ON-RESISTANCE
#14 | 2009-08-27 ✅ Patent 7,629,634 granted on 2009-12-08Trenched MOSFET with trenched source contact
#15 | 2009-08-27TRENCH MOSEFT WITH TRENCH GATES UNDERNEATH CONTACT AREAS OF ESD DIODE FOR PREVENTION OF GATE AND SOURCE SHORTATE
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