Assignee profile:

MaxPower Semiconductor Inc.

City:

Campbell, California

Country:

United States

Published Applications:

15

Last publication date:

2010-12-09

Patent Grants:

14

Last grant date:

2011-08-02

Top Inventors for applications by MaxPower Semiconductor Inc.

These are the the leading inventors for applications assigned to MaxPower Semiconductor Inc.:

Recent patent applications by MaxPower Semiconductor Inc.

MaxPower Semiconductor Inc. based in Campbell, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2010-12-09
US20100308400A1
Electricity

Semiconductor Power Switches Having Trench Gates

#2 | 2010-08-26 ✅ Patent 7,989,293 granted on 2011-08-02
US20100214016A1
Electricity

Trench device structure and fabrication

#3 | 2010-04-08 ✅ Patent 7,960,783 granted on 2011-06-14
US20100084704A1
Electricity

Devices containing permanent charge

#4 | 2010-02-04 ✅ Patent 10,062,788 granted on 2018-08-28
US20100025763A1
Electricity

Semiconductor on insulator devices containing permanent charge

#5 | 2010-02-04 ✅ Patent 8,330,186 granted on 2012-12-11
US20100025726A1
Electricity

Lateral devices containing permanent charge

#6 | 2010-01-21 ✅ Patent 8,310,001 granted on 2012-11-13
US20100013552A1
Electricity

MOSFET switch with embedded electrostatic charge

#7 | 2009-12-17 ✅ Patent 7,910,439 granted on 2011-03-22
US20090309156A1
Electricity

Super self-aligned trench MOSFET devices, methods, and systems

#8 | 2009-12-03 ✅ Patent 7,911,021 granted on 2011-03-22
US20090294892A1
Electricity

Edge termination for semiconductor devices

#9 | 2009-08-20 ✅ Patent 8,076,719 granted on 2011-12-13
US20090206924A1
Electricity

Semiconductor device structures and related processes

#10 | 2009-08-20 ✅ Patent 7,923,804 granted on 2011-04-12
US20090206913A1
Electricity

Edge termination with improved breakdown voltage

#11 | 2008-08-14 ✅ Patent 8,058,682 granted on 2011-11-15
US20080191307A1
Electricity

Semiconductor device

#12 | 2008-07-10 ✅ Patent 8,420,483 granted on 2013-04-16
US20080166845A1
Electricity

Method of manufacture for a semiconductor device

#13 | 2008-07-10 ✅ Patent 8,344,451 granted on 2013-01-01
US20080164520A1
Electricity

Semiconductor device

#14 | 2008-07-10 ✅ Patent 7,964,913 granted on 2011-06-21
US20080164518A1
Electricity

Power MOS transistor incorporating fixed charges that balance the charge in the drift region

#15 | 2008-07-10 ✅ Patent 8,659,074 granted on 2014-02-25
US20080164516A1
Electricity

Semiconductor device

AssigneeID:

228380 ⎘