Assignee profile:

ALTIS SEMICONDUCTOR

City:

Corbeil Essonnes Cedex

Country:

France

Published Applications:

15

Last publication date:

2009-06-25

Patent Grants:

15

Last grant date:

2010-05-11

Top Inventors for applications by ALTIS SEMICONDUCTOR

These are the the leading inventors for applications assigned to ALTIS SEMICONDUCTOR:

Recent patent applications by ALTIS SEMICONDUCTOR

ALTIS SEMICONDUCTOR based in Corbeil Essonnes Cedex, FR has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2009-06-25 ✅ Patent 7,715,258 granted on 2010-05-11
US20090161460A1
Physics

Retention test system and method for resistively switching memory devices

#2 | 2008-09-11 ✅ Patent 8,268,664 granted on 2012-09-18
US20080217670A1
Electricity

Methods of manufacturing a semiconductor device; method of manufacturing a memory cell; semiconductor device; semiconductor processing device; integrated circuit having a memory cell

#3 | 2007-10-18 ✅ Patent 7,411,854 granted on 2008-08-12
US20070242549A1
Physics

System and method for controlling constant power dissipation

#4 | 2007-08-30 ✅ Patent 8,492,810 granted on 2013-07-23
US20070200155A1
Electricity

Method of fabricating an integrated electronic circuit with programmable resistance cells

#5 | 2007-05-31 ✅ Patent 7,381,574 granted on 2008-06-03
US20070123023A1
Electricity

Method of forming dual interconnects in manufacturing MRAM cells

#6 | 2007-05-17 ✅ Patent 7,411,815 granted on 2008-08-12
US20070109840A1
Physics

Memory write circuit

#7 | 2007-01-04 ✅ Patent 7,334,317 granted on 2008-02-26
US20070000120A1
Electricity

Method of forming magnetoresistive junctions in manufacturing MRAM cells

#8 | 2006-08-10 ✅ Patent 7,099,186 granted on 2006-08-29
US20060176734A1
Physics

Double-decker MRAM cells with scissor-state angled reference layer magnetic anisotropy and method for fabricating

#9 | 2006-08-10 ✅ Patent 7,180,113 granted on 2007-02-20
US20060175675A1
Electricity

Double-decker MRAM cell with rotated reference layer magnetizations

#10 | 2006-07-06 ✅ Patent 7,061,797 granted on 2006-06-13
US20060146601A1
Physics

Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell

#11 | 2006-03-30 ✅ Patent 7,212,432 granted on 2007-05-01
US20060067112A1
Electricity

Resistive memory cell random access memory device and method of fabrication

#12 | 2006-03-30 ✅ Patent 7,130,206 granted on 2006-10-31
US20060067098A1
Physics

Content addressable memory cell including resistive memory elements

#13 | 2006-02-23 ✅ Patent 7,200,032 granted on 2007-04-03
US20060039187A1
Electricity

MRAM with vertical storage element and field sensor

#14 | 2006-02-23 ✅ Patent 7,092,284 granted on 2006-08-15
US20060039185A1
Physics

MRAM with magnetic via for storage of information and field sensor

#15 | 2006-02-02 ✅ Patent 7,180,160 granted on 2007-02-20
US20060024886A1
Electricity

MRAM storage device

AssigneeID:

249591 ⎘