Renesas Device Design Corp.

City:

Itami-shi

Country:

Japan

Published Applications:

Last publication date:

2011-06-16

Patent Grants:

Last grant date:

2012-08-07

Top Inventors for applications by Renesas Device Design Corp.

These are the the leading inventors for applications assigned to Renesas Device Design Corp.:

Takashi OKUDA 5 Hyogo, Japan
Yasuo Morimoto 5 Hyogo, Japan
Toshio Kumamoto 5 Hyogo, Japan
Yuko Maruyama 5 Hyogo, Japan

Yoshimasa Yoshimura 1 Tokyo, Japan
Atsushi Ohba 1 Tokyo, Japan
Koichi Ushijima 1 Hyogo, Japan
Toshiyuki Kumagai 1 Hyogo, Japan

Takeshi Nakayama 1 Tokyo, Japan
Noboru Miyamoto 1 Tokyo, Japan
Norihiko Hakushi 1 Hyogo, Japan
Hussein Khalid Hassan 1 Tokyo, Japan

Recent patent applications by Renesas Device Design Corp.

Renesas Device Design Corp. based in Itami-shi, JP has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2011-06-16 ✅ Patent 8,237,282 granted on 2012-08-07

US20110140277A1

Electricity

Semiconductor device

#2 | 2009-10-08 ✅ Patent 7,915,708 granted on 2011-03-29

US20090250788A1

Electricity

Semiconductor device

#3 | 2008-01-03 ✅ Patent 7,446,390 granted on 2008-11-04

US20080001255A1

Electricity

Semiconductor device

#4 | 2007-12-27 ✅ Patent 7,557,427 granted on 2009-07-07

US20070296059A1

Electricity

Semiconductor device

#5 | 2006-03-30 ✅ Patent 7,436,672 granted on 2008-10-14

US20060067059A1

Electricity

Semiconductor device and method of manufacture thereof

#6 | 2006-03-30 ✅ Patent 7,427,031 granted on 2008-09-23

US20060065746A1

Physics

Semiconductor memory device

#7 | 2005-07-07 ✅ Patent 7,276,776 granted on 2007-10-02

US20050145987A1

Electricity

Semiconductor device

#8 | 2005-05-12

US20050099751A1

Electricity

Semiconductor device having overcurrent protection function and data setting method thereof

AssigneeID:

254693 ⎘