FORCE MOS TECHNOLOGY CO. LTD.

City:

Hsingchu

Country:

Taiwan

Published Applications:

Last publication date:

2009-12-24

Patent Grants:

Last grant date:

2010-10-19

Top Inventors for applications by FORCE MOS TECHNOLOGY CO. LTD.

These are the the leading inventors for applications assigned to FORCE MOS TECHNOLOGY CO. LTD.:

Fu-Yuan Hsieh 1 Hsingchu, Taiwan

Recent patent applications by FORCE MOS TECHNOLOGY CO. LTD.

FORCE MOS TECHNOLOGY CO. LTD. based in Hsingchu, TW has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2009-12-24 ✅ Patent 7,816,732 granted on 2010-10-19

US20090315106A1

Electricity

Integrated trench MOSFET and Schottky rectifier with trench contact structure

AssigneeID:

257969 ⎘