FORCE MOS TECHNOLOGY CO. LTD.

City:

HsinChu City

Country:

Taiwan

Published Applications:

Last publication date:

2009-12-24

Patent Grants:

Last grant date:

2009-12-01

Top Inventors for applications by FORCE MOS TECHNOLOGY CO. LTD.

These are the the leading inventors for applications assigned to FORCE MOS TECHNOLOGY CO. LTD.:

Fu-Yuan Hsieh 1 Hsingchu, Taiwan

Recent patent applications by FORCE MOS TECHNOLOGY CO. LTD.

FORCE MOS TECHNOLOGY CO. LTD. based in HsinChu City, TW has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2009-12-24 ✅ Patent 7,626,231 granted on 2009-12-01

US20090315107A1

Electricity

Integrated trench MOSFET and junction barrier schottky rectifier with trench contact structures

AssigneeID:

257970 ⎘