High Current Electronics Institute

City:

Tomsk

Country:

Russian Federation

Published Applications:

Last publication date:

2008-03-13

Patent Grants:

Last grant date:

Top Inventors for applications by High Current Electronics Institute

These are the the leading inventors for applications assigned to High Current Electronics Institute:

Dmitrii V. SHITZ 2 Tomsk, Russian Federation
Victor F. TARASENKO 2 Tomsk, Russian Federation
Mikhail I LOMAEV 2 Tomsk, Russian Federation
Victor S. SKAKUN 2 Tomsk, Russian Federation

Andrey A. LISENKO 2 Tomsk, Russian Federation
Yoshiie Matsumoto 2 Tokyo, Japan

Recent patent applications by High Current Electronics Institute

High Current Electronics Institute based in Tomsk, RU has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2008-03-13

US20080061669A1

Electricity

Dielectric barrier discharge excimer light source

#2 | 2008-03-06

US20080054791A1

Electricity

Dielectric barrier discharge excimer light source

AssigneeID:

261534 ⎘