Jackson, Mississippi
United States
19
2013-01-10
17
2013-11-19
These are the the leading inventors for applications assigned to SS SC IP, LLC:
SS SC IP, LLC based in Jackson, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
SELF-ALIGNED SEMICONDUCTOR DEVICES WITH REDUCED GATE-SOURCE LEAKAGE UNDER REVERSE BIAS AND METHODS OF MAKING
#2 | 2013-01-10 ✅ Patent 8,587,024 granted on 2013-11-19Vertical junction field effect transistors and bipolar junction transistors
#3 | 2012-12-06VERTICAL JUNCTION FIELD EFFECT TRANSISTOR WITH MESA TERMINATION AND METHOD OF MAKING THE SAME
#4 | 2012-12-06 ✅ Patent 8,729,628 granted on 2014-05-20Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of making
#5 | 2012-10-18 ✅ Patent 8,884,270 granted on 2014-11-11Vertical junction field effect transistors with improved thermal characteristics and methods of making
#6 | 2012-10-04 ✅ Patent 8,591,651 granted on 2013-11-26Epitaxial growth on low degree off-axis silicon carbide substrates and semiconductor devices made thereby
#7 | 2012-09-06 ✅ Patent 8,513,675 granted on 2013-08-20Vertical junction field effect transistors having sloped sidewalls and methods of making
#8 | 2012-08-30 ✅ Patent 9,019,001 granted on 2015-04-28Gate driver for enhancement-mode and depletion-mode wide bandgap semiconductor JFETs
#9 | 2012-08-23 ✅ Patent 8,455,328 granted on 2013-06-04Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
#10 | 2012-08-09 ✅ Patent 8,592,826 granted on 2013-11-26Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy
#11 | 2011-01-27 ✅ Patent 8,202,772 granted on 2012-06-19Vertical junction field effect transistors having sloped sidewalls and methods of making
#12 | 2011-01-06 ✅ Patent 8,183,124 granted on 2012-05-22Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy
#13 | 2010-12-23 ✅ Patent 8,338,255 granted on 2012-12-25Methods of making vertical junction field effect transistors and bipolar junction transistors without ion implantation
#14 | 2010-12-23 ✅ Patent 8,169,022 granted on 2012-05-01Vertical junction field effect transistors and diodes having graded doped regions and methods of making
#15 | 2010-11-11 ✅ Patent 8,203,377 granted on 2012-06-19Gate driver for enhancement-mode and depletion-mode wide bandgap semiconductor JFETs
#16 | 2010-06-17 ✅ Patent 8,058,655 granted on 2011-11-15Vertical junction field effect transistors having sloped sidewalls and methods of making
#17 | 2009-10-01 ✅ Patent 8,221,546 granted on 2012-07-17Epitaxial growth on low degree off-axis SiC substrates and semiconductor devices made thereby
#18 | 2008-04-24 ✅ Patent 8,269,262 granted on 2012-09-18Vertical junction field effect transistor with mesa termination and method of making the same
#19 | 2007-12-20 ✅ Patent 8,193,537 granted on 2012-06-05Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
2870 ⎘