Shenzhen
China
9
2015-07-30
6
2016-11-08
These are the the leading inventors for applications assigned to Founder Microelectronics International Co., Ltd.:
Founder Microelectronics International Co., Ltd. based in Shenzhen, CN has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Power semiconductor device and method of fabricating the same and cutoff ring
#2 | 2015-02-05 ✅ Patent 9,190,280 granted on 2015-11-17Method for manufacturing laterally diffused metal oxide semiconductor device
#3 | 2015-01-29 ✅ Patent 9,018,049 granted on 2015-04-28Method for manufacturing insulated gate bipolar transistor IGBT
#4 | 2015-01-22SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#5 | 2014-07-31 ✅ Patent 9,136,127 granted on 2015-09-15Method of fabricating GOI silicon wafer, GOI silicon wafer and GOI detection method
#6 | 2014-06-19INTEGRATED DEVICE AND METHOD FOR FABRICATING THE INTEGRATED DEVICE
#7 | 2014-05-29 ✅ Patent 9,236,469 granted on 2016-01-12High-voltage LDMOS integrated device
#8 | 2013-07-25Semiconductor Chip and Methods for Producing the Same
#9 | 2013-07-18 ✅ Patent 8,722,483 granted on 2014-05-13Method for manufacturing double-layer polysilicon gate
Also check out Founder Microelectronics International Co., Ltd.'s (Shenzhen, China) applicant profile with 5 patent applications submitted.
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