Belfast
United Kingdom
19
2026-05-07
6
2025-02-18
These are the the leading inventors for applications assigned to IceMos Technology Limited:
IceMos Technology Limited based in Belfast, GB has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Semiconductor Device and Method of Forming Charge Balanced Power MOSFET Combining Field Plate and Super-Junction
#2 | 2026-03-12Semiconductor Device and Method of Direct Wafer Bonding Between Semiconductor Layer Containing Similar WBG Materials
#3 | 2025-05-15Semiconductor Device and Method of Forming Silicon Carbide Switch-Back Engineered Substrate
#4 | 2024-12-05Semiconductor Device and Method of Forming MEMS Super-Junction Metal Oxide Semiconductor Using Epitaxial Layer
#5 | 2024-12-05Semiconductor Device and Method of Forming MEMS Super-Junction Metal Oxide Semiconductor Using Vapor Phase Deposition
#6 | 2023-11-16 ✅ Patent 12,230,674 granted on 2025-02-18Radiation hardened high voltage superjunction MOSFET
#7 | 2023-06-29Semiconductor Device and Method for Power MOSFET on Partial SOI
#8 | 2023-05-18Semiconductor Device and Method of Forming MOSFET Optimized for RDSON and/or COSS
#9 | 2023-05-18 ✅ Patent 12,527,043 granted on 2026-01-13Semiconductor Device and Method of Forming Charge Balanced Power MOSFET Combining Field Plate and Super-Junction
#10 | 2023-03-02High-Breakdown Voltage, Low RDSON Electrical Component with Dissimilar Semiconductor Layers
#11 | 2023-03-02 ✅ Patent 12,598,782 granted on 2026-04-07Super-Junction MOSFET/IGBT with MEMS Layer Transfer and WBG Drain
#12 | 2023-03-02Semiconductor Device and Method of Direct Wafer Bonding Between Semiconductor Layer Containing Similar WBG Materials
#13 | 2023-03-02Semiconductor Device and Method of Providing Rad Hard Power Transistor with 1200v Breakdown Voltage
#14 | 2023-03-02Semiconductor Device and Method of Forming Sacrificial Heteroepitaxy Interface to Provide Substantially Defect-Free Silicon Carbide Substrate
#15 | 2023-03-02Semiconductor Device and Method of Forming Radiation Hardened Substantially Defect Free Silicon Carbide Substrate
#16 | 2022-09-15 ✅ Patent 11,757,001 granted on 2023-09-12Radiation hardened high voltage superjunction MOSFET
#17 | 2022-07-28Semiconductor Device Providing a Biosensor to Test for Pathogen
#18 | 2022-07-28 ✅ Patent 12,222,316 granted on 2025-02-11Semiconductor device providing a biosensor to test for pathogen
#19 | 2022-04-21 ✅ Patent 11,545,565 granted on 2023-01-03Semiconductor device and method of forming low voltage power MOSFETs using graphene for metal layers and graphene nanoribbons for channel and drain enhancement regions of power vertical and lateral MOSFETs
Also check out IceMos Technology Limited's (Belfast, United Kingdom) applicant profile with 11 patent applications submitted.
322866 ⎘