CHANGXIN MEMORY TECHNOLOGIES,INC.

City:

Hefei City

Country:

China

Published Applications:

Last publication date:

2023-02-09

Patent Grants:

Last grant date:

2024-10-01

Top Inventors for applications by CHANGXIN MEMORY TECHNOLOGIES,INC.

These are the the leading inventors for applications assigned to CHANGXIN MEMORY TECHNOLOGIES,INC.:

Guangsu SHAO 1 Hefei City, China
Deyuan XIAO 1 Hefei City, China
Jingwen LU 1 Hefei, China
Jingwen Lu 1 Hefei City, China

Recent patent applications by CHANGXIN MEMORY TECHNOLOGIES,INC.

CHANGXIN MEMORY TECHNOLOGIES,INC. based in Hefei City, CN has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2023-02-09 ✅ Patent 12,108,590 granted on 2024-10-01

US20230042535A1

Electricity

Semiconductor storage device and forming method thereof

#2 | 2023-01-05

US20230005920A1

Electricity

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE

Also check out CHANGXIN MEMORY TECHNOLOGIES,INC.'s (Hefei city, China) applicant profile with 1 patent applications submitted.

AssigneeID:

332689 ⎘