Bethlehem, Pennsylvania
United States
8
2024-06-20
6
2025-01-07
These are the the leading inventors for applications assigned to Bell Semiconductor, LLC:
Bell Semiconductor, LLC based in Bethlehem, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Method to induce strain in finFET channels from an adjacent region
#2 | 2023-08-17METHOD TO CO-INTEGRATE SiGe AND Si CHANNELS FOR FINFET DEVICES
#3 | 2023-06-22 ✅ Patent 12,278,234 granted on 2025-04-15Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods
#4 | 2023-05-25 ✅ Patent 11,948,943 granted on 2024-04-02Method to induce strain in FINFET channels from an adjacent region
#5 | 2023-04-20METHOD OF MAKING A SEMICONDUCTOR DEVICE USING A DUMMY GATE
#6 | 2021-10-21 ✅ Patent 11,610,886 granted on 2023-03-21Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods
#7 | 2021-02-25 ✅ Patent 11,587,928 granted on 2023-02-21Method to induce strain in finFET channels from an adjacent region
#8 | 2019-09-12 ✅ Patent 11,670,554 granted on 2023-06-06Method to co-integrate SiGe and Si channels for finFET devices
Also check out Bell Semiconductor, LLC's (Bethlehem, United States) applicant profile with 5 patent applications submitted.
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