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Assignee profile:

II-VI ADVANCED MATERIALS, LLC

City:

Pine Brook, New Jersey

Country:

United States

Published Applications:

12

Last publication date:

2024-08-29

Patent Grants:

12

Last grant date:

2026-03-24

Top Inventors for applications by II-VI ADVANCED MATERIALS, LLC

These are the the leading inventors for applications assigned to II-VI ADVANCED MATERIALS, LLC:

Recent patent applications by II-VI ADVANCED MATERIALS, LLC

II-VI ADVANCED MATERIALS, LLC based in Pine Brook, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2024-08-29 ✅ Patent 12,584,239 granted on 2026-03-24
US20240287705A1
Chemistry; metallurgy

METHOD FOR PREPARING AN ALUMINUM DOPED SILICON CARBIDE CRYSTAL BY PROVIDING A COMPOUND INCLUDING ALUMINUM AND OXYGEN IN A CAPSULE COMPRISED OF A FIRST AND SECOND MATERIAL

 #2 | 2024-08-15 ✅ Patent 12,476,149 granted on 2025-11-18
US20240274468A1
Electricity

CRYSTAL EFFICIENT SIC DEVICE WAFER PRODUCTION

 #3 | 2024-08-01 ✅ Patent 12,328,914 granted on 2025-06-10
US20240258368A1
Electricity

BURIED GRID WITH SHIELD IN WIDE BAND GAP MATERIAL

 #4 | 2024-05-09 ✅ Patent 12,618,171 granted on 2026-05-05
US20240150931A1
Chemistry; metallurgy

LARGE DIAMETER SILICON CARBIDE SINGLE CRYSTALS AND APPARATUS AND METHOD OF MANUFACTURE THEREOF

 #5 | 2023-08-03 ✅ Patent 12,034,001 granted on 2024-07-09
US20230246020A1
Electricity

Concept for silicon carbide power devices

 #6 | 2023-07-06 ✅ Patent 11,984,474 granted on 2024-05-14
US20230215911A1
Electricity

Buried grid with shield in wide band gap material

 #7 | 2023-05-18 ✅ Patent 11,984,497 granted on 2024-05-14
US20230155019A1
Electricity

Integration of a Schottky diode with a MOSFET

 #8 | 2022-11-24 ✅ Patent 11,923,450 granted on 2024-03-05
US20220376107A1
Electricity

MOSFET in SiC with self-aligned lateral MOS channel

 #9 | 2022-07-14 ✅ Patent 11,996,330 granted on 2024-05-28
US20220223476A1
Electricity

Crystal efficient SiC device wafer production

 #10 | 2021-09-02 ✅ Patent 12,060,650 granted on 2024-08-13
US20210269938A1
Chemistry; metallurgy

Vanadium-compensated 4H and 6H single crystals of optical grade, and silicon carbide crystals and methods for producing same

 #11 | 2021-09-02 ✅ Patent 12,006,591 granted on 2024-06-11
US20210269937A1
Chemistry; metallurgy

Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material

 #12 | 2021-06-24 ✅ Patent 11,905,618 granted on 2024-02-20
US20210189591A1
Chemistry; metallurgy

Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof

Also check out II-VI ADVANCED MATERIALS, LLC's (Pine Brook, United States) applicant profile with 9 patent applications submitted.

AssigneeID:

347979 ⎘